PROCEEDINGS VOLUME 8352
28TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE (EMLC 2012) | 17-18 JANUARY 2012
28th European Mask and Lithography Conference
28TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE (EMLC 2012)
17-18 January 2012
Dresden, Germany
Front Matter
Proc. SPIE 8352, Front Matter: Volume 8352, 835201 (10 May 2012); doi: 10.1117/12.945763
Plenary Session
Proc. SPIE 8352, Nanometer-level semiconductor imaging for micrometer-level MEMS, 835202 (16 April 2012); doi: 10.1117/12.945686
Proc. SPIE 8352, Mask industry assessment trend analysis: 2012, 835203 (16 April 2012); doi: 10.1117/12.923746
EUV Lithography and Mask Application
Proc. SPIE 8352, Mask readiness for EUVL pilot line, 835204 (16 April 2012); doi: 10.1117/12.923125
Proc. SPIE 8352, NXE:3100 full wafer imaging performance and budget verification, 835205 (16 April 2012); doi: 10.1117/12.918495
Proc. SPIE 8352, A fast approach to model EUV mask 3D and shadowing effects, 835207 (16 April 2012); doi: 10.1117/12.921442
Proc. SPIE 8352, EUVL mask performance and optimization, 835208 (16 April 2012); doi: 10.1117/12.921209
Mask Optimization
Proc. SPIE 8352, AIMS D2DB simulation for DUV and EUV mask inspection, 835209 (16 April 2012); doi: 10.1117/12.921128
Proc. SPIE 8352, Correcting image placement errors using registration control (RegC) technology in the photomask periphery, 83520A (16 April 2012); doi: 10.1117/12.919199
Lithography Optimization
Proc. SPIE 8352, Optimization method of photolithography process by means of atomic force microscopy, 83520B (17 April 2012); doi: 10.1117/12.918024
Proc. SPIE 8352, Investigation and mitigation of field-edge CDU fingerprint for ArFi lithography for 45-nm to sub-28-nm logic nodes, 83520C (17 April 2012); doi: 10.1117/12.918535
Proc. SPIE 8352, Double exposure as a method to correct on-wafer CD variations: a proposal, 83520D (17 April 2012); doi: 10.1117/12.923649
Lithography for MEMS
Proc. SPIE 8352, Lithographic aspects for the fabrication of BiCMOS embedded bio-MEMS and RF-MEMS, 83520E (17 April 2012); doi: 10.1117/12.918021
Proc. SPIE 8352, MEMS: fabrication of cryogenic bolometers, 83520F (17 April 2012); doi: 10.1117/12.923707
Mask Materials
Proc. SPIE 8352, Impact of reticle absorber on the imaging properties in ArFi lithography, 83520G (16 April 2012); doi: 10.1117/12.918018
Proc. SPIE 8352, PSM and thin OMOG reticles aerial imaging metrology comparison study, 83520H (17 April 2012); doi: 10.1117/12.919791
Mask Data Preparation
Proc. SPIE 8352, Pointwise process proximity function calibration: PPFexplorer application results, 83520I (17 April 2012); doi: 10.1117/12.920568
Proc. SPIE 8352, Mask write time reduction: deployment of advanced approaches and their impact on established work models, 83520J (17 April 2012); doi: 10.1117/12.923675
Proc. SPIE 8352, Improvements on Corner2, a lossless layout image compression algorithm for maskless lithography systems, 83520K (17 April 2012); doi: 10.1117/12.923205
Emerging Lithography
Proc. SPIE 8352, Enhanced e-beam pattern writing for nano-optics based on character projection, 83520M (17 April 2012); doi: 10.1117/12.920562
Proc. SPIE 8352, A novel tool for frequency assisted thermal nanoimprint (T-NIL), 83520N (17 April 2012); doi: 10.1117/12.918037
Proc. SPIE 8352, Nanoimprint activities in Austria in the research project cluster NILaustria, 83520O (17 April 2012); doi: 10.1117/12.921324
Proc. SPIE 8352, Phase-shift at subwavelength holographic lithography (SWHL), 83520P (17 April 2012); doi: 10.1117/12.918016
Mask Handling, Cleaning, and Haze
Proc. SPIE 8352, High quality mask storage in an advanced Logic-Fab, 83520Q (17 April 2012); doi: 10.1117/12.923053
Proc. SPIE 8352, Through pellicle management of haze formation in a wafer fabrication environment, 83520R (17 April 2012); doi: 10.1117/12.918378
Proc. SPIE 8352, Cleaning aspects of material choice for high end mask manufacturing, 83520S (17 April 2012); doi: 10.1117/12.920564
Proc. SPIE 8352, The effect of puddle megasonic cleaning for advanced photomask with subresolution assist features (SRAFs), 83520T (17 April 2012); doi: 10.1117/12.921280
EUV Mask Defect Management
Proc. SPIE 8352, Integrated cleaning and handling automation of NXE3100 reticles, 83520U (17 April 2012); doi: 10.1117/12.923321
Proc. SPIE 8352, Towards the optical inspection sensitivity optimization of EUV masks and EUVL-exposed wafers, 83520V (17 April 2012); doi: 10.1117/12.923134
Proc. SPIE 8352, EUV mask defects and their removal, 83520W (17 April 2012); doi: 10.1117/12.923882
Proc. SPIE 8352, EUVL defect printability: an industry challenge, 83520X (17 April 2012); doi: 10.1117/12.923013
Proc. SPIE 8352, Advanced metrology techniques for the characterization of EUV mask blank defects, 83520Y (17 April 2012); doi: 10.1117/12.922909
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