PROCEEDINGS VOLUME 8419
6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES (AOMATT 2012) | 26-29 APRIL 2012
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES (AOMATT 2012)
26-29 April 2012
Xiamen, China
Front Matter: Volume 8419
Proc. SPIE 8419, Front Matter: Volume 8419, 841901 (15 October 2012); doi: 10.1117/12.2010691
Session 5-1
Proc. SPIE 8419, Wavelength sensing based on the Goos-Hänchen effect in the symmetrical metal-cladding waveguide structure, 841902 (15 October 2012); doi: 10.1117/12.974319
Proc. SPIE 8419, Lock-in error compensation based on synchronous filtering for dithered ring laser gyro, 841903 (15 October 2012); doi: 10.1117/12.975752
Proc. SPIE 8419, Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector, 841904 (15 October 2012); doi: 10.1117/12.978226
Proc. SPIE 8419, Research in the modulation transfer function (MTF) measurement of InGaAs focal plane arrays, 841905 (15 October 2012); doi: 10.1117/12.973762
Proc. SPIE 8419, Modeling of strain and stress distribution of HgCdTe/CdTe/Si(211) heterostructure, 841906 (15 October 2012); doi: 10.1117/12.977794
Proc. SPIE 8419, Performance of low dark current InGaAs shortwave infrared detector, 841907 (15 October 2012); doi: 10.1117/12.977229
Proc. SPIE 8419, Design and simulation of arrayed waveguide grating (AWG) for micro-Raman spectrometer, 841908 (15 October 2012); doi: 10.1117/12.977822
Session 5-2
Proc. SPIE 8419, New unimorph deformable mirror for laser beam shaping, 841909 (15 October 2012); doi: 10.1117/12.973683
Proc. SPIE 8419, Electric field distribution characteristics of photoconductive antennas, 84190A (15 October 2012); doi: 10.1117/12.956431
Proc. SPIE 8419, Effect of a delta-doping green emitting layer in white organic light-emitting device, 84190B (15 October 2012); doi: 10.1117/12.977838
Proc. SPIE 8419, Depth estimation based on adaptive support weight and SIFT for multi-lenslet cameras, 84190C (15 October 2012); doi: 10.1117/12.975694
Proc. SPIE 8419, Metallophthalocyanine and subphthalocyanine films as electron-transport layer in organic light-emitting diodes, 84190D (15 October 2012); doi: 10.1117/12.978655
Session 5-3
Proc. SPIE 8419, High performance organic field-effect transistor with oxide/metal bilayer electrodes, 84190E (15 October 2012); doi: 10.1117/12.977848
Proc. SPIE 8419, The research of energy harvesting system use in RFID tag, 84190F (15 October 2012); doi: 10.1117/12.978691
Proc. SPIE 8419, Synthesis of DMAW-PMMA photopolymer with high photosensitivity for volume holographic storage, 84190G (15 October 2012); doi: 10.1117/12.975801
Proc. SPIE 8419, High-order diffusion equation based infrared image background suppression, 84190H (15 October 2012); doi: 10.1117/12.978279
Proc. SPIE 8419, Shearlet transform based anomaly detection for hyperspectral image, 84190I (15 October 2012); doi: 10.1117/12.978636
Proc. SPIE 8419, Diminishing of S-shaped J-V curves by substrate heating in organic solar cells based on triplet materials, 84190J (15 October 2012); doi: 10.1117/12.979183
Poster Session: Optoelectronic Materials and Devices or Sensing and Imaging
Proc. SPIE 8419, Chirped-pulse propagation and spectral compression in all-normal dispersion photonic crystal fibers, 84190K (15 October 2012); doi: 10.1117/12.970251
Proc. SPIE 8419, Terahertz time-domain spectroscopy of Cd1-xZnxTe single crystal, 84190L (15 October 2012); doi: 10.1117/12.952479
Proc. SPIE 8419, Effects of vacuum annealing and oxygen ion beam bombarding on the electrical and optical properties of ITO films deposited by E-beam evaporation, 84190M (15 October 2012); doi: 10.1117/12.952234
Proc. SPIE 8419, Thermal annealing effect on the electrical properties of the Pt/Al0.45Ga0.55N Schottky contacts, 84190N (23 October 2012); doi: 10.1117/12.975823
Proc. SPIE 8419, Rapid star locating method for CCD image based on cross projection and differential extremum algorithm, 84190O (15 October 2012); doi: 10.1117/12.973657
Proc. SPIE 8419, Third-order nonlinear optical properties of two organometallic complexes-doped PMMA thin film irradiated by picosecond pulse, 84190P (15 October 2012); doi: 10.1117/12.978171
Proc. SPIE 8419, Front-illuminated planar type InGaAs sub-pixels infrared detector, 84190Q (15 October 2012); doi: 10.1117/12.973679
Proc. SPIE 8419, Optical and mechanical design of 10X zoom lens for low-vision devices, 84190R (15 October 2012); doi: 10.1117/12.970484
Proc. SPIE 8419, The accurate measurement of background carrier concentration in short-period longwave InAs/GaSb superlattices on GaSb substrate, 84190S (15 October 2012); doi: 10.1117/12.970554
Proc. SPIE 8419, Study on application of spectral filter in detecting stars in daytime, 84190T (15 October 2012); doi: 10.1117/12.974308
Proc. SPIE 8419, Molecular beam epitaxy of HgCdTe on (211)B CdZnTe, 84190U (15 October 2012); doi: 10.1117/12.977856
Proc. SPIE 8419, Design of high-resolution digital microscope eyepiece based on FPGA, 84190V (15 October 2012); doi: 10.1117/12.973645
Proc. SPIE 8419, Embedded three-dimensional shape measurement system with microprojector, 84190W (15 October 2012); doi: 10.1117/12.975229
Proc. SPIE 8419, Design and precision measurement of TDICCD focal plane for space camera, 84190X (15 October 2012); doi: 10.1117/12.977206
Proc. SPIE 8419, Large single-mode rib waveguide in lithium niobate on insulator, 84190Y (15 October 2012); doi: 10.1117/12.975644
Proc. SPIE 8419, Application of Au/Sn in the formation of p-HgCdTe photoconductive detectors' electrodes, 84190Z (15 October 2012); doi: 10.1117/12.974977
Proc. SPIE 8419, Design of micro-channel heat sink with diamond heat spreader for high power LD, 841910 (15 October 2012); doi: 10.1117/12.979795
Proc. SPIE 8419, Silicon-on-insulator electro-optically tunable microring resonators with gear-shaped p-i-n diodes, 841911 (15 October 2012); doi: 10.1117/12.970538
Proc. SPIE 8419, Mobility spectrum analysis of ion-etching-induced p-to-n type converted layers in HgCdTe single crystal, 841912 (15 October 2012); doi: 10.1117/12.975806
Proc. SPIE 8419, Analysis of oversampling for noise reduction of UV image, 841913 (15 October 2012); doi: 10.1117/12.975669
Proc. SPIE 8419, Pyroelectric infrared linear arrays based on PIMNT, 841914 (15 October 2012); doi: 10.1117/12.975646
Proc. SPIE 8419, Effects of growing conditions on preparation of InSb thin films by femtosecond pulsed laser deposition, 841915 (15 October 2012); doi: 10.1117/12.975263
Proc. SPIE 8419, Study on platinum thermal sensitive films deposited using magnetic sputtering, 841916 (15 October 2012); doi: 10.1117/12.973727
Proc. SPIE 8419, The key technology of image sensor dynamic range expansion, 841917 (15 October 2012); doi: 10.1117/12.973681
Proc. SPIE 8419, Electrical properties of black silicon, 841918 (15 October 2012); doi: 10.1117/12.975674
Proc. SPIE 8419, First-principles calculations for electronic structures of carbon-doped ZnO, 841919 (15 October 2012); doi: 10.1117/12.975757
Proc. SPIE 8419, Analysis of dark current in long-wavelength HgCdTe junction diodes at low temperature and an approximate method to calculate the trap density of depletion region, 84191A (15 October 2012); doi: 10.1117/12.975948
Proc. SPIE 8419, Warpage and thermal stress analysis of hybrid infrared focal plane assembly, 84191B (15 October 2012); doi: 10.1117/12.977431
Proc. SPIE 8419, Study on ICP dry etching of GaSb and InAs/GaSb super lattices, 84191C (15 October 2012); doi: 10.1117/12.978177
Proc. SPIE 8419, The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures, 84191D (15 October 2012); doi: 10.1117/12.975117
Proc. SPIE 8419, Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy, 84191E (15 October 2012); doi: 10.1117/12.975813
Proc. SPIE 8419, Fast exposure time decision in multi-exposure HDR imaging, 84191F (15 October 2012); doi: 10.1117/12.973646
Proc. SPIE 8419, Surface treatment effects on the I-V characteristics of HgCdTe LW infrared photovoltaic detectors, 84191G (15 October 2012); doi: 10.1117/12.977302
Proc. SPIE 8419, Contact property of Ni(Ti)/Pt/Au on p-In0.52Al0.48As, 84191H (15 October 2012); doi: 10.1117/12.974293
Proc. SPIE 8419, Analysis of cross talk in high density mesa linear InGaAs detector arrays using tiny light dot, 84191I (15 October 2012); doi: 10.1117/12.975736
Proc. SPIE 8419, Minority carrier lifetimes in different doped LWIR HgCdTe grown by LPE, 84191J (15 October 2012); doi: 10.1117/12.975827
Proc. SPIE 8419, Camshift object tracking method with unscented Kalman filtering motion estimation, 84191K (15 October 2012); doi: 10.1117/12.970491
Proc. SPIE 8419, Optical characterization for off-axis illumination in DLP system, 84191L (15 October 2012); doi: 10.1117/12.971183
Proc. SPIE 8419, Influence of material morphology on fabrication of large format IRFPA, 84191M (15 October 2012); doi: 10.1117/12.974378