PROCEEDINGS VOLUME 8432
SPIE PHOTONICS EUROPE | 16-19 APRIL 2012
Semiconductor Lasers and Laser Dynamics V
Proceedings Volume 8432 is from: Logo
SPIE PHOTONICS EUROPE
16-19 April 2012
Brussels, Belgium
Front Matter
Proc. SPIE 8432, Front Matter: Volume 8432, 843201 (31 May 2012); doi: 10.1117/12.979313
VCSELs I
Proc. SPIE 8432, High-speed VCSELs for energy efficient computer interconnects, 843202 (9 May 2012); doi: 10.1117/12.923054
Proc. SPIE 8432, New standards in high-speed and tunable long wavelength VCSELs, 843203 (11 May 2012); doi: 10.1117/12.923285
Proc. SPIE 8432, Hybrid integration approach of VCSELs for miniaturized optical deflection of microparticles, 843204 (15 May 2012); doi: 10.1117/12.922610
Proc. SPIE 8432, Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures, 843205 (11 May 2012); doi: 10.1117/12.922278
Proc. SPIE 8432, VCSELs with two-sided beam emission for pressure sensor applications, 843206 (15 May 2012); doi: 10.1117/12.922486
VCSELs II
Proc. SPIE 8432, Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs, 843209 (11 May 2012); doi: 10.1117/12.922593
Proc. SPIE 8432, Three-dimensional simulation of 1300-nm AlGaInAs VCSEL arrays, 84320A (15 May 2012); doi: 10.1117/12.922450
Proc. SPIE 8432, Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers, 84320B (11 May 2012); doi: 10.1117/12.922075
Proc. SPIE 8432, Electro-optically modulated coupled-cavity VCSELs: electrical design optimization for high-speed operation, 84320C (11 May 2012); doi: 10.1117/12.922387
Quantum Dot Lasers I
Proc. SPIE 8432, Quantum dot microlasers with external feedback: a chaotic system close to the quantum limit, 84320G (15 May 2012); doi: 10.1117/12.921783
Proc. SPIE 8432, Intra-cavity absorber photocurrent characteristics of a quantum dot laser emitting on two emission-states: experiment and simulation, 84320H (11 May 2012); doi: 10.1117/12.927081
Quantum Cascade Lasers I
Proc. SPIE 8432, High performance GaAs/AlGaAs quantum cascade lasers: optimization of electrical and thermal properties, 84320I (11 May 2012); doi: 10.1117/12.922007
Proc. SPIE 8432, Facet reflectivity reduction of quantum cascade lasers by tilted facets, 84320L (15 May 2012); doi: 10.1117/12.922417
Proc. SPIE 8432, Experimental analysis of thermal properties of AlGaAs/GaAs quantum cascade lasers, 84320M (15 May 2012); doi: 10.1117/12.922019
Quantum Cascade Lasers II
Proc. SPIE 8432, Room temperature continuous wave interband cascade lasers for gas sensing, 84320N (15 May 2012); doi: 10.1117/12.922210
Proc. SPIE 8432, Near-field characteristics of broad area diode lasers during catastrophic optical damage failure, 84320O (11 May 2012); doi: 10.1117/12.922395
Proc. SPIE 8432, Spatial "rocking" for improving the spatial quality of the beam of broad area semiconductor lasers, 84320Q (15 May 2012); doi: 10.1117/12.921544
Proc. SPIE 8432, Narrow linewidth discrete mode laser diodes at 1550 nm, 84320R (15 May 2012); doi: 10.1117/12.922132
Semiconductor Lasers
Proc. SPIE 8432, Laterally-coupled high power GaSb distributed feedback lasers fabricated by nanoimprint lithography at 2 um wavelength, 84320T (11 May 2012); doi: 10.1117/12.922811
Proc. SPIE 8432, Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg+ ions, 84320V (11 May 2012); doi: 10.1117/12.922514
Proc. SPIE 8432, Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV, 84320W (11 May 2012); doi: 10.1117/12.922584
Mode-Locking
Proc. SPIE 8432, Passively mode-locked 1 GHz MOPA system generating sub-500-fs pulses after external compression, 84320Y (15 May 2012); doi: 10.1117/12.922901
Proc. SPIE 8432, Conversion between optical ASK and optical FSK using nonlinear dynamics of semiconductor lasers, 843210 (15 May 2012); doi: 10.1117/12.922878
Time Delay Systems
Proc. SPIE 8432, Theoretical analysis of a multi-stripe laser array with external off-axis feedback, 843212 (11 May 2012); doi: 10.1117/12.921847
Proc. SPIE 8432, Low-frequency fluctuations in a laser diode with phase-conjugate feedback, 843213 (11 May 2012); doi: 10.1117/12.922613
Proc. SPIE 8432, Photonic single nonlinear-delay dynamical node for information processing, 843214 (11 May 2012); doi: 10.1117/12.922463
Proc. SPIE 8432, Dynamical properties of two delay-coupled lasers: on spectra, correlations, and synchronisation, 843215 (11 May 2012); doi: 10.1117/12.922307
Nanolaser and Optical Injection
Proc. SPIE 8432, Mapping transients in the nonlinear dynamics of an optically injected VCSEL, 843219 (11 May 2012); doi: 10.1117/12.922168
Semiconductor Lasers and Optical Injection
Proc. SPIE 8432, Deterministic and stochastic dynamics of linear polarizations emitted by single-mode VCSELs subject to orthogonal optical injection, 84321B (11 May 2012); doi: 10.1117/12.922549
Proc. SPIE 8432, Polarization switching of transverse modes in VCSELs subject to two-frequency orthogonal optical injection, 84321C (15 May 2012); doi: 10.1117/12.922524
Proc. SPIE 8432, Delay induces motion of multipeak localized structures in cavity semiconductors, 84321D (11 May 2012); doi: 10.1117/12.921867
Proc. SPIE 8432, Dynamics accompanying polarization switching in vertical-cavity surface-emitting lasers, 84321E (15 May 2012); doi: 10.1117/12.922455
Semiconductor Lasers
Proc. SPIE 8432, High performance identical layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s, 84321F (11 May 2012); doi: 10.1117/12.946604
Proc. SPIE 8432, True photonic band-gap in vertical-cavity surface-emitting lasers, 84321G (15 May 2012); doi: 10.1117/12.921792
Proc. SPIE 8432, Simulation of 1550-nm diamond VECSEL with high contrast grating, 84321H (15 May 2012); doi: 10.1117/12.921221
Proc. SPIE 8432, Semiconductor ring lasers as optical neurons, 84321I (15 May 2012); doi: 10.1117/12.922269
Quantum Dot Lasers II
Proc. SPIE 8432, Many-body effects and self-contained phase dynamics in an optically injected quantum-dot laser, 84321J (15 May 2012); doi: 10.1117/12.921991
Proc. SPIE 8432, Simultaneous multi-state stimulated emission in quantum dot lasers: experiment and analytical approach, 84321L (11 May 2012); doi: 10.1117/12.922754
Poster Session
Proc. SPIE 8432, Theoretical study about the gain in indirect bandgap semiconductor acousto-optical cavities with simultaneous photon and phonon confinement, 84321M (11 May 2012); doi: 10.1117/12.921080
Proc. SPIE 8432, Self-consistent simulation of mid-IR quantum cascade lasers based on rate equation approach, 84321P (11 May 2012); doi: 10.1117/12.921822
Proc. SPIE 8432, Nonlinear dynamics in directly modulated semiconductor ring lasers, 84321Q (15 May 2012); doi: 10.1117/12.921949
Proc. SPIE 8432, Experimental and numerical study of square wave oscillations due to asymmetric optical feedback in semiconductor ring lasers, 84321R (15 May 2012); doi: 10.1117/12.921953
Proc. SPIE 8432, Electrical and optical characterisation of mid-IR GaAs/AlGaAs quantum cascade lasers, 84321S (15 May 2012); doi: 10.1117/12.922020
Proc. SPIE 8432, Low timing jitter 40 Gb/s all-optical clock recovery based on an amplified feedback laser diode, 84321T (15 May 2012); doi: 10.1117/12.922066
Proc. SPIE 8432, Interaction between laser beams FP and DFB laser diodes, 84321U (11 May 2012); doi: 10.1117/12.922136
Proc. SPIE 8432, Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 µm, 84321V (11 May 2012); doi: 10.1117/12.922138
Proc. SPIE 8432, 850nm VCSEL with a liquid crystal overlay, 84321X (15 May 2012); doi: 10.1117/12.922238
Proc. SPIE 8432, Extended synchronization resulting from resonant phase and intensity dynamics in a dual-polarization laser, 84321Y (11 May 2012); doi: 10.1117/12.922243
Proc. SPIE 8432, Discrete mode laser diodes for FTTH/PON applications up to 10 Gbit/s, 84321Z (15 May 2012); doi: 10.1117/12.922326
Proc. SPIE 8432, Improving beam quality in broad area semiconductor amplifiers, 843222 (11 May 2012); doi: 10.1117/12.922849
Proc. SPIE 8432, Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers, 843225 (11 May 2012); doi: 10.1117/12.946053
Proc. SPIE 8432, Self-mixing in VCSELs for multi-parametric sensing applications: theory and experiment, 843226 (11 May 2012); doi: 10.1117/12.946605
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