PROCEEDINGS VOLUME 8441
PHOTOMASK AND NGL MASK TECHNOLOGY XIX | 17-19 APRIL 2012
Photomask and Next-Generation Lithography Mask Technology XIX
IN THIS VOLUME

0 Sessions, 59 Papers, 0 Presentations
Metrology I  (4)
Writing I  (3)
Repair  (3)
MDP I  (4)
Writing II  (2)
Metrology II  (1)
Inspection I  (4)
MDP II  (3)
PHOTOMASK AND NGL MASK TECHNOLOGY XIX
17-19 April 2012
Yokohama, Japan
Front Matter: Volume 8441
Proc. SPIE 8441, Front Matter: Volume 8441, 844101 (2 July 2013); doi: 10.1117/12.999461
Mask Process and Degradation I
Proc. SPIE 8441, Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks, 844102 (30 June 2012); doi: 10.1117/12.964411
Proc. SPIE 8441, Tales of scales: how to enable backup process tool qualification for high-end photomasks, 844103 (30 June 2012); doi: 10.1117/12.964671
Proc. SPIE 8441, A simulation of chrome migration and its prevention in photomask, 844104 (30 June 2012); doi: 10.1117/12.977217
Proc. SPIE 8441, New development system for EUV mask, 844105 (30 June 2012); doi: 10.1117/12.979645
Metrology I
Proc. SPIE 8441, Mask CD uniformity metrology for logic patterning and its correlation to wafer data, 844106 (30 June 2012); doi: 10.1117/12.976858
Proc. SPIE 8441, A study of hot spot measurement on WLCD, 844107 (30 June 2012); doi: 10.1117/12.978706
Proc. SPIE 8441, CD-Metrology of EUV masks in the presence of charging: measurement and simulation, 844108 (30 June 2012); doi: 10.1117/12.999462
Proc. SPIE 8441, New CDSEM technology and its performance for multiple patterning process, 844109 (30 June 2012); doi: 10.1117/12.964404
Writing I
Proc. SPIE 8441, Closed loop registration control (RegC) using PROVE as the data source for the RegC process, 84410A (30 June 2012); doi: 10.1117/12.976632
Proc. SPIE 8441, Results of proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC), 84410B (30 June 2012); doi: 10.1117/12.978999
Proc. SPIE 8441, Deflector contamination in E-beam mask writer and its effect on pattern placement error of photomask for sub 20nm device node, 84410C (30 June 2012); doi: 10.1117/12.981613
Repair
Proc. SPIE 8441, Photomask repair technology by using gas field ion source, 84410D (30 June 2012); doi: 10.1117/12.981167
Proc. SPIE 8441, Applications and development of BitClean technology including selective nanoparticle manipulation, 84410E (30 June 2012); doi: 10.1117/12.964959
Proc. SPIE 8441, The door opener for EUV mask repair, 84410F (30 June 2012); doi: 10.1117/12.978285
EDA, OPC and RET
Proc. SPIE 8441, A perspective on collaborative research for emerging technologies and design, 84410G (30 June 2012); doi: 10.1117/12.970297
Proc. SPIE 8441, Roadmap to sub-nanometer OPC model accuracy, 84410H (30 June 2012); doi: 10.1117/12.978190
Proc. SPIE 8441, Novel OPC flow for the trim-mask lithography, 84410I (30 June 2012); doi: 10.1117/12.964398
Proc. SPIE 8441, Hybrid OPC verification flow with compact and rigorous models, 84410J (30 June 2012); doi: 10.1117/12.939131
Proc. SPIE 8441, Assist feature printability prediction by 3-D resist profile reconstruction, 84410K (30 June 2012); doi: 10.1117/12.964973
FPD Photomasks
Proc. SPIE 8441, Over-generation-10 size FPD photomasks for virtual reality, 84410L (30 June 2012); doi: 10.1117/12.981451
Proc. SPIE 8441, Layout and reticle verification for FPD, 84410M (30 June 2012); doi: 10.1117/12.981996
Proc. SPIE 8441, Past and future challenges from a display mask writer perspective, 84410N (30 June 2012); doi: 10.1117/12.970249
Proc. SPIE 8441, Repair Technology for Large Scale Photomasks, 84410O (2 July 2013); doi: 10.1117/12.1000135
Proc. SPIE 8441, Loss free mask production with inspection, repair, and pellicle handling systems, 84410P (30 June 2012); doi: 10.1117/12.970391
MDP I
Proc. SPIE 8441, Fast layout processing methodologies for scalable distributed computing applications, 84410Q (30 June 2012); doi: 10.1117/12.954019
Proc. SPIE 8441, Novel MRC algorithms using GPGPU, 84410R (30 June 2012); doi: 10.1117/12.970255
Proc. SPIE 8441, Masks data preparation flow for advanced technology nodes, 84410S (30 June 2012); doi: 10.1117/12.978290
Proc. SPIE 8441, Maskshop data preparation and quality control: from supplier management viewpoint, 84410T (30 June 2012); doi: 10.1117/12.964097
EDA, OPC, and RET
Proc. SPIE 8441, Systematic study of source mask optimization and verification flows, 84410U (30 June 2012); doi: 10.1117/12.965565
Proc. SPIE 8441, EUV and 193 mask line width roughness (LWR) impact on wafer CD LWR, 84410V (30 June 2012); doi: 10.1117/12.964397
Proc. SPIE 8441, A systematic approach for extracting verification patterns from an OPC test mask, 84410W (30 June 2012); doi: 10.1117/12.977202
Mask Process and Degradation II
Proc. SPIE 8441, New paradigm for effective particle removal cleaning of EUV mask, 84410X (30 June 2012); doi: 10.1117/12.979820
Proc. SPIE 8441, Impact of mask line edge roughness and statistical noise on next generation mask making, 84410Y (30 June 2012); doi: 10.1117/12.979387
Proc. SPIE 8441, Study on storage components and application performance for mask haze prevention, 84410Z (30 June 2012); doi: 10.1117/12.964254
Proc. SPIE 8441, Evaluation of molecular contaminants in the micro-environment between photomask and pellicle using analysis tool, 844110 (30 June 2012); doi: 10.1117/12.964406
Writing II
Proc. SPIE 8441, EB alignment function for defect mitigation of EUV blank, 844111 (30 June 2012); doi: 10.1117/12.979626
Proc. SPIE 8441, Placement error due to charging in EBL: experimental verification of a new correction model, 844112 (30 June 2012); doi: 10.1117/12.978924
Metrology II
Proc. SPIE 8441, Evaluation of 3D metrology potential using a multiple detector CDSEM, 844113 (30 June 2012); doi: 10.1117/12.977362
Inspection I
Proc. SPIE 8441, Shedding light on EUV mask inspection, 844114 (30 June 2012); doi: 10.1117/12.976059
Proc. SPIE 8441, EUV actinic blank inspection tool with a high magnification review mode, 844115 (30 June 2012); doi: 10.1117/12.964983
Proc. SPIE 8441, Development of novel projection electron microscopy (PEM) system for EUV mask inspection, 844116 (30 June 2012); doi: 10.1117/12.978633
Proc. SPIE 8441, Development of a new mask pattern inspection tool NPI-7000 and applied results to EUV mask inspection, 844117 (30 June 2012); doi: 10.1117/12.973655
EUVL and NIL I
Proc. SPIE 8441, Defect management of EUV mask, 844118 (30 June 2012); doi: 10.1117/12.978976
Proc. SPIE 8441, Evaluation of EUV mask cleaning process, 844119 (30 June 2012); doi: 10.1117/12.964413
Proc. SPIE 8441, Novel programmed defect mask blanks for ML defect understanding and characterization, 84411A (30 June 2012); doi: 10.1117/12.975824
Proc. SPIE 8441, ZEP520A cold-development technique and tool for ultimate resolution to fabricate 1Xnm bit pattern EB master mold for nano-imprinting lithography for HDD/BPM development, 84411B (30 June 2012); doi: 10.1117/12.978282
Proc. SPIE 8441, The quality assurance of EUV mask pattern based on 3D-SEM and lithography simulation, 84411C (30 June 2012); doi: 10.1117/12.979703
MDP II
Proc. SPIE 8441, Applications of MRC software for efficient mask manufacturing, 84411D (30 June 2012); doi: 10.1117/12.970256
Proc. SPIE 8441, Mask process characterization of multiresolution writing, 84411E (30 June 2012); doi: 10.1117/12.978836
Proc. SPIE 8441, A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks, 84411F (30 June 2012); doi: 10.1117/12.981609
Inspection II
Proc. SPIE 8441, Study of EUV mask inspection using projection EB optics with programmed pattern defect, 84411G (30 June 2012); doi: 10.1117/12.978240
Proc. SPIE 8441, Improved signal to noise ratio in actinic EUVL mask blank inspection, 84411H (30 June 2012); doi: 10.1117/12.978628
EUVL and NIL II
Proc. SPIE 8441, Development of standalone coherent EUV scatterometry microscope with high-harmonic-generation EUV source, 84411I (30 June 2012); doi: 10.1117/12.952477
Proc. SPIE 8441, Challenges and solutions ensuring EUVL photomask integrity, 84411J (30 June 2012); doi: 10.1117/12.978198
Proc. SPIE 8441, Black border with etched multilayer on EUV mask, 84411K (30 June 2012); doi: 10.1117/12.965536
Proc. SPIE 8441, Shadowing 3D mask effects in EUV, 84411L (30 June 2012); doi: 10.1117/12.964977