PROCEEDINGS VOLUME 8467
SPIE NANOSCIENCE + ENGINEERING | 12-16 AUGUST 2012
Nanoepitaxy: Materials and Devices IV
Proceedings Volume 8467 is from: Logo
SPIE NANOSCIENCE + ENGINEERING
12-16 August 2012
San Diego, California, United States
Front Matter: Volume 8467
Proc. SPIE 8467, Front Matter: Volume 8467, 846701 (13 November 2012); doi: 10.1117/12.2011782
Nanowires I
Proc. SPIE 8467, Biofunctionalization of Si nanowires using a solution based technique, 846702 (19 October 2012); doi: 10.1117/12.970460
Proc. SPIE 8467, Light extraction in individual GaN nanowires on Si for LEDs, 846703 (11 October 2012); doi: 10.1117/12.970456
Low-Dimensional Devices I
Proc. SPIE 8467, MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color, 84670C (11 October 2012); doi: 10.1117/12.970434
Proc. SPIE 8467, Indium phosphide nanowire network: growth and characterization for thermoelectric conversion, 84670E (11 October 2012); doi: 10.1117/12.929861
Atomic Layer Deposition
Proc. SPIE 8467, Novel optical properties of Ag films deposited by plasma enhanced atomic layer deposition (PEALD), 84670F (11 October 2012); doi: 10.1117/12.970437
Proc. SPIE 8467, Plasma enhanced atomic layer deposition of silver thin films for applications in plasmonics and surface enhanced Raman scattering, 84670H (19 October 2012); doi: 10.1117/12.929033
Nanowires II
Proc. SPIE 8467, Enhanced field ionization current enabled by gold induced surface states to silicon nanowires, 84670J (11 October 2012); doi: 10.1117/12.945971
Proc. SPIE 8467, Graded nanowire ultraviolet LEDs by polarization engineering, 84670L (11 October 2012); doi: 10.1117/12.970450
Low-Dimensional Materials II
Proc. SPIE 8467, Heterogeneous integration of epitaxial nanostructures: strategies and application drivers, 84670R (11 October 2012); doi: 10.1117/12.970438
Nano Characterization
Proc. SPIE 8467, Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition, 84670U (11 October 2012); doi: 10.1117/12.930525
Low-Dimensional Devices II
Proc. SPIE 8467, High electron mobility AlGaN/AlN/GaN HEMT structure with a nano-scale AlN interlayer, 84670W (11 October 2012); doi: 10.1117/12.929347
Proc. SPIE 8467, 3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications, 84670Y (19 October 2012); doi: 10.1117/12.945974
Proc. SPIE 8467, Contact metal effects in indium phosphide nanowire transistor, 84670Z (11 October 2012); doi: 10.1117/12.930530
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