PROCEEDINGS VOLUME 8507
SPIE OPTICAL ENGINEERING + APPLICATIONS | 12-16 AUGUST 2012
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
IN THIS VOLUME

0 Sessions, 30 Papers, 0 Presentations
CZT I  (1)
CZT II  (1)
CZT III  (2)
CZT IV  (3)
CZT V  (1)
Proceedings Volume 8507 is from: Logo
SPIE OPTICAL ENGINEERING + APPLICATIONS
12-16 August 2012
San Diego, California, United States
Front Matter: Volume 8507
Proc. SPIE 8507, Front Matter: Volume 8507, 850701 (24 October 2012); doi: 10.1117/12.2008651
Scintillators I
Proc. SPIE 8507, Next generation CMOS SSPMs for scintillation detection applications, 850704 (24 October 2012); doi: 10.1117/12.929841
Proc. SPIE 8507, Electronic structure, energy transport, and optical properties of halide scintillators, 850705 (24 October 2012); doi: 10.1117/12.929131
CZT I
Proc. SPIE 8507, Improving the growth of CZT crystals for radiation detectors: A modeling perspective, 850707 (24 October 2012); doi: 10.1117/12.930041
Detector Materials I
Proc. SPIE 8507, Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors, 85070C (24 October 2012); doi: 10.1117/12.946026
Proc. SPIE 8507, Mercury and antimony chalcohalide semiconductors as new candidates for radiation detection applications at room temperature, 85070F (24 October 2012); doi: 10.1117/12.929858
CZT II
Proc. SPIE 8507, High energy gamma-ray detection using CZT detectors with virtual Frisch grid, 85070H (24 October 2012); doi: 10.1117/12.946027
Detector Materials II
Proc. SPIE 8507, Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials, 85070M (24 October 2012); doi: 10.1117/12.930072
Proc. SPIE 8507, Control of the polytypes and line defects in radiation detector materials, 85070N (24 October 2012); doi: 10.1117/12.928472
Proc. SPIE 8507, Characterization of thallium-based ternary semiconductor compounds for radiation detection, 85070O (24 October 2012); doi: 10.1117/12.928325
Neutron Detectors
Proc. SPIE 8507, Development of the new generation of glass-based neutron detection materials, 85070Q (24 October 2012); doi: 10.1117/12.946595
Proc. SPIE 8507, Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers, 85070R (24 October 2012); doi: 10.1117/12.940748
Proc. SPIE 8507, Direction sensitive neutron detectors in near field measurements, 85070S (24 October 2012); doi: 10.1117/12.929975
CZT III
Proc. SPIE 8507, Growth of CdZnTe by the detached Bridgman method, 85070V (24 October 2012); doi: 10.1117/12.946212
Proc. SPIE 8507, Growth of CZT using additionally zone-refined raw materials, 85070X (24 October 2012); doi: 10.1117/12.929982
CZT IV
Proc. SPIE 8507, Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method, 850710 (24 October 2012); doi: 10.1117/12.928176
Proc. SPIE 8507, Preliminary results on Bridgman grown CdZnTe detector crystals assisted by ampoule rotation, 850711 (24 October 2012); doi: 10.1117/12.930437
Proc. SPIE 8507, Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts, 850715 (24 October 2012); doi: 10.1117/12.949354
Scintillators II
Proc. SPIE 8507, Latest advances in large diameter SrI:Eu and CLYC:Ce scintillators for isotope identification, 850716 (24 October 2012); doi: 10.1117/12.945937
Proc. SPIE 8507, Transparent garnet ceramic scintillators for gamma-ray detection, 850717 (24 October 2012); doi: 10.1117/12.956437
Proc. SPIE 8507, Medical isotope identification with large mobile detection systems, 85071B (24 October 2012); doi: 10.1117/12.929189
CZT V
Proc. SPIE 8507, Design and tests of the hard x-ray polarimeter X-Calibur, 85071D (24 October 2012); doi: 10.1117/12.929292
Poster Session
Proc. SPIE 8507, Transport properties and spectrometric performances of CdZnTe gamma-ray detectors, 85071I (24 October 2012); doi: 10.1117/12.928567
Proc. SPIE 8507, Structural characteristics of Zn1-xMnxTe polycrystalline films, 85071J (24 October 2012); doi: 10.1117/12.928990
Proc. SPIE 8507, Some structural and optical properties of thin and thick CdTe and CdxMn1-xTe films, 85071K (24 October 2012); doi: 10.1117/12.929017
Proc. SPIE 8507, High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method, 85071L (24 October 2012); doi: 10.1117/12.929035
Proc. SPIE 8507, Registration of high-intensity electron and x-ray fields with polycrystalline CVD diamond detectors, 85071N (24 October 2012); doi: 10.1117/12.929291
Proc. SPIE 8507, Surface processing of CdZnTe crystals, 85071S (24 October 2012); doi: 10.1117/12.937953
Proc. SPIE 8507, Photoluminescence and absorption properties of the surface functional layer of CdTe crystals, 85071U (24 October 2012); doi: 10.1117/12.940764
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