Front Matter: Volume 8522
Proc. SPIE 8522, Front Matter: Volume 8522, 852201 (8 November 2012); doi: 10.1117/12.2008671
Keynote Session
Proc. SPIE 8522, Transform designs to chips, an end user point of view on mask making, 852202 (8 November 2012); doi: 10.1117/12.981267
Invited Session
Proc. SPIE 8522, 2012 Mask Industry Survey, 852203 (8 November 2012); doi: 10.1117/12.978704
Patterning
Proc. SPIE 8522, Improving CD uniformity using MB-MDP for 14nm node and beyond, 852205 (8 November 2012); doi: 10.1117/12.966327
Proc. SPIE 8522, Impact of an etched EUV mask black border on imaging and overlay, 852206 (8 November 2012); doi: 10.1117/12.964547
Proc. SPIE 8522, An enhanced measure of mask quality using separated models, 852207 (8 November 2012); doi: 10.1117/12.964379
Proc. SPIE 8522, Cold-development tool and technique for the ultimate resolution of ZEP520A to fabricate an EB master mold for nano-imprint lithography for 1Tbit/inch2 BPM development, 852208 (8 November 2012); doi: 10.1117/12.973668
Proc. SPIE 8522, Improvement of lithographic performance and reduction of mask cost by simple OPC, 852209 (8 November 2012); doi: 10.1117/12.961118
Proc. SPIE 8522, A profile-aware resist model with variable threshold, 85220A (8 November 2012); doi: 10.1117/12.966383
Metrology
Proc. SPIE 8522, CD control with defect inspection: you can teach an old dog a new trick, 85220B (8 November 2012); doi: 10.1117/12.965531
Proc. SPIE 8522, Study of critical dimension uniformity (CDU) using a mask inspector, 85220C (8 November 2012); doi: 10.1117/12.977944
Proc. SPIE 8522, Correcting image placement errors using registration control (RegC®) technology in the photomask periphery, 85220D (8 November 2012); doi: 10.1117/12.980258
Proc. SPIE 8522, Impact of mask CDU and local CD variation on intra-field CDU, 85220E (8 November 2012); doi: 10.1117/12.970523
Proc. SPIE 8522, Correlation between reticle- and wafer-CD difference of multiple 28nm reticle-sites, 85220F (8 November 2012); doi: 10.1117/12.964376
Proc. SPIE 8522, Comparison of critical dimension measurements of a mask inspection system with a CD-SEM, 85220G (8 November 2012); doi: 10.1117/12.977248
Mask Inspection and Repair I
Proc. SPIE 8522, Impact of EUVL mask surface roughness on an actinic blank inspection image and a wafer image, 85220H (8 November 2012); doi: 10.1117/12.964965
Proc. SPIE 8522, Illuminating EUVL mask defect printability, 85220I (8 November 2012); doi: 10.1117/12.977853
Proc. SPIE 8522, EUV multilayer defect compensation (MDC) by absorber pattern modification: improved performance with deposited material and other progresses, 85220J (8 November 2012); doi: 10.1117/12.977174
Proc. SPIE 8522, Electron beam inspection of 16nm HP node EUV masks, 85220L (8 November 2012); doi: 10.1117/12.976017
Proc. SPIE 8522, EUV mask inspection study for sub-20nm device, 85220M (8 November 2012); doi: 10.1117/12.964964
Material and Process
Proc. SPIE 8522, The E-beam resist test facility: performance testing and benchmarking of E-beam resists for advanced mask writers, 85220N (8 November 2012); doi: 10.1117/12.978665
Proc. SPIE 8522, Conductive layer for charge dissipation during electron-beam exposures, 85220O (8 November 2012); doi: 10.1117/12.977181
Proc. SPIE 8522, Mask characterization for CDU budget breakdown in advanced EUV lithography, 85220P (8 November 2012); doi: 10.1117/12.970395
Proc. SPIE 8522, Process challenges in advanced photomask etch processes, 85220Q (8 November 2012); doi: 10.1117/12.977137
Proc. SPIE 8522, Advanced photomask fabrication process to increase pattern reliability for sub-20nm node, 85220R (8 November 2012); doi: 10.1117/12.964974
Proc. SPIE 8522, Study and comparison of negative tone resists for fabrication of bright field masks for 14nm node, 85220S (8 November 2012); doi: 10.1117/12.976878
Mask Data Preparation I
Proc. SPIE 8522, Novel DPT methodology co-optimized with design rules for sub-20nm device, 85220T (8 November 2012); doi: 10.1117/12.964976
Proc. SPIE 8522, Mask design automation: an integrated approach, 85220U (8 November 2012); doi: 10.1117/12.979350
Proc. SPIE 8522, Generating well-behaved OASIS files for mask data processing, 85220V (8 November 2012); doi: 10.1117/12.964293
Proc. SPIE 8522, Enhancement of correction for mask process through dose correction on already geometrically corrected layout data, 85220W (8 November 2012); doi: 10.1117/12.964408
Proc. SPIE 8522, Automatic marking by use of MRCC range pattern matching for advanced MDP, 85220X (8 November 2012); doi: 10.1117/12.966809
Simulation and Modeling
Proc. SPIE 8522, Choosing the data flow paradigm for EUV mask process corrections, 85220Y (8 November 2012); doi: 10.1117/12.965225
Proc. SPIE 8522, Bridging the gaps between mask inspection/review systems and actual wafer printability using computational metrology and inspection (CMI) technologies, 85220Z (8 November 2012); doi: 10.1117/12.977176
Proc. SPIE 8522, Particle transport in plasma systems for development of EUVL mask blanks, 852210 (8 November 2012); doi: 10.1117/12.979599
Proc. SPIE 8522, Interactions of 3D mask effects and NA in EUV lithography, 852211 (8 November 2012); doi: 10.1117/12.2009117
Proc. SPIE 8522, Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction, 852212 (8 November 2012); doi: 10.1117/12.965312
Cleaning/Contamination/Haze
Proc. SPIE 8522, Sub-20-nm node photomask cleaning enhancement by controlling zeta potential, 852213 (8 November 2012); doi: 10.1117/12.975822
Proc. SPIE 8522, Effect of radiation exposure on the surface adhesion of Ru-capped MoSi multilayer blanks, 852214 (8 November 2012); doi: 10.1117/12.976060
Proc. SPIE 8522, The plasma etching methods for minimizing mask CD variation by cleaning process, 852215 (8 November 2012); doi: 10.1117/12.964984
Proc. SPIE 8522, Preparation of substrates for EUV blanks using an etch clean process to meet HVM challenges, 852216 (8 November 2012); doi: 10.1117/12.976980
Proc. SPIE 8522, Controlling MegaSonic performance by optimizing cleaning media's physical and gaseous properties, 852217 (8 November 2012); doi: 10.1117/12.979342
Proc. SPIE 8522, A new approach in dry technology for non-degrading optical and EUV mask cleaning, 852218 (8 November 2012); doi: 10.1117/12.976889
Source/Mask Optimization
Proc. SPIE 8522, The significance of rigorous electromagnetic field simulation on mask development for 20nm optical lithography technology, 852219 (8 November 2012); doi: 10.1117/12.964292
Proc. SPIE 8522, The new test pattern selection method for OPC model calibration, based on the process of clustering in a hybrid space, 85221A (8 November 2012); doi: 10.1117/12.953827
Proc. SPIE 8522, OPC and verification for LELE double patterning, 85221B (8 November 2012); doi: 10.1117/12.979143
Mask Long-Term Durability
Proc. SPIE 8522, Photomask film degradation effects in the wafer fab: how to detect and monitor over time, 85221D (8 November 2012); doi: 10.1117/12.968166
Proc. SPIE 8522, Reticle storage in microenvironments with extreme clean dry air, 85221E (8 November 2012); doi: 10.1117/12.963739
Mask Pattern Generators
Proc. SPIE 8522, Proposal of an extended loading effect correction for EBM-8000, 85221G (8 November 2012); doi: 10.1117/12.975920
Proc. SPIE 8522, Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC), 85221H (8 November 2012); doi: 10.1117/12.964988
Proc. SPIE 8522, Shape-dependent dose margin correction using model-based mask data preparation, 85221I (8 November 2012); doi: 10.1117/12.958601
Proc. SPIE 8522, Reflective electron-beam lithography performance for the 10nm logic node, 85221J (8 November 2012); doi: 10.1117/12.964978
Proc. SPIE 8522, Future mask writers requirements for the sub-10nm node era, 85221K (8 November 2012); doi: 10.1117/12.977172
Mask Inspection and Repair II
Proc. SPIE 8522, EUVL mask repair: expanding options with nanomachining, 85221L (8 November 2012); doi: 10.1117/12.974749
Proc. SPIE 8522, E-beam based mask repair as door opener for defect free EUV masks, 85221M (8 November 2012); doi: 10.1117/12.966387