PROCEEDINGS VOLUME 8549
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 19-22 DECEMBER 2011
16th International Workshop on Physics of Semiconductor Devices
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES
19-22 December 2011
Kanpur, India
Front Matter
Proc. SPIE 8549, Front Matter: Volume 8549, 854901 (24 October 2012); doi: 10.1117/12.926917
Device Modelling and Simulation
Proc. SPIE 8549, Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode, 854902 (15 October 2012); doi: 10.1117/12.925141
Proc. SPIE 8549, A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT, 854903 (15 October 2012); doi: 10.1117/12.925320
Proc. SPIE 8549, Semi-Analytical Estimation of Intra-Die Variations of Analog Performances of Nano-scale nMOS Transistor, 854904 (15 October 2012); doi: 10.1117/12.925339
Proc. SPIE 8549, Digital Circuit Analysis of Insulated Shallow Extension Silicon On Void (ISESOV) FET for Low Voltage Applications, 854905 (15 October 2012); doi: 10.1117/12.925533
Proc. SPIE 8549, An Analytical Modeling Approach for a Gate All Around (GAA) Tunnel Field Effect Transistor (TFET), 854906 (15 October 2012); doi: 10.1117/12.925534
Proc. SPIE 8549, The impact of Process-Induced Mechanical Stress on Multi-Fingered Device Performance, 854907 (15 October 2012); doi: 10.1117/12.925972
Proc. SPIE 8549, Impact of Ge Profile on The Performance of PNP SiGe HBT on Thin Film SOI, 854908 (15 October 2012); doi: 10.1117/12.926345
Proc. SPIE 8549, Device oriented statistical modeling method for process variability in 45nm analog CMOS technology, 854909 (15 October 2012); doi: 10.1117/12.926853
Proc. SPIE 8549, Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacks, 85490A (15 October 2012); doi: 10.1117/12.926880
Proc. SPIE 8549, Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT, 85490B (15 October 2012); doi: 10.1117/12.926991
Proc. SPIE 8549, NEGF analysis of double gate SiGe and GaAs tunnel FETs, 85490C (15 October 2012); doi: 10.1117/12.927344
Proc. SPIE 8549, Device Improvement and Circuit Performance Evaluation of complete SiGe Double Gate Tunnel FETs, 85490D (15 October 2012); doi: 10.1117/12.927346
Proc. SPIE 8549, Simulation studies on heterojunction and HIT solar cells, 85490E (15 October 2012); doi: 10.1117/12.927395
Proc. SPIE 8549, A comparative study of dynamic characteristics of asymmetrical ATT diodes based on various semiconductor materials with increasing band-gap energy, 85490F (15 October 2012); doi: 10.1117/12.927419
Proc. SPIE 8549, Heterojunction versus homojunction transit time devices at elevated junction temperature: performance comparison at MMwave window frequency, 85490G (15 October 2012); doi: 10.1117/12.927421
High Frequency/Power Devices
Proc. SPIE 8549, Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power supplies, 85490H (15 October 2012); doi: 10.1117/12.923768
Proc. SPIE 8549, A comparative study of high frequency characteristics of SiC-based SDRs, 85490I (15 October 2012); doi: 10.1117/12.925107
Proc. SPIE 8549, A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12), 85490J (15 October 2012); doi: 10.1117/12.925195
Proc. SPIE 8549, The influence of 175 MeV Nickel ion irradiation on the electrical characteristics of power transistors (HF13), 85490K (15 October 2012); doi: 10.1117/12.925199
Proc. SPIE 8549, Cl2/Ar based Inductively Coupled Plasma Etching of GaN/AlGaN Structure, 85490L (15 October 2012); doi: 10.1117/12.925529
Proc. SPIE 8549, 60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor, 85490M (15 October 2012); doi: 10.1117/12.926278
Proc. SPIE 8549, Analysis of Angelov Model for 0.25um pHEMTs, 85490N (15 October 2012); doi: 10.1117/12.926856
Proc. SPIE 8549, Design, fabrication and measurement of sub 1 dB noise figure LNA, 85490O (15 October 2012); doi: 10.1117/12.926869
Proc. SPIE 8549, Si, SiC Homo Junctions and n-SiC/p-Si Hetero Junction: MM-wave Performance Characteristics, 85490P (15 October 2012); doi: 10.1117/12.926955
Proc. SPIE 8549, Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template, 85490Q (15 October 2012); doi: 10.1117/12.926974
Proc. SPIE 8549, 0.4um high voltage CMOS smart power technology: 120V LD NMOS for integrated system on chip applications, 85490R (15 October 2012); doi: 10.1117/12.926994
Proc. SPIE 8549, Theoretical Study of drain current of AlInN/GaN HEMTs on SiC Substrate, 85490S (15 October 2012); doi: 10.1117/12.927259
Proc. SPIE 8549, New Generation MOSFET Design for Battery Powered Portable Applications, 85490T (15 October 2012); doi: 10.1117/12.927361
Proc. SPIE 8549, An improved SOI MESFET with triple-recessed drift region for electrical performance improvement, 85490U (15 October 2012); doi: 10.1117/12.927400
Proc. SPIE 8549, Large-Signal Modeling of Hexagonal (4H-) SiC Based Double Drift Transit Time Device as High-Power MM-Wave Source at W-band Window Frequency, 85490V (15 October 2012); doi: 10.1117/12.927420
Proc. SPIE 8549, RF power amplifier: pushing the boundaries of performance versus cost, 85490W (15 October 2012); doi: 10.1117/12.981344
MEMS and Sensors
Proc. SPIE 8549, Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection, 85490X (15 October 2012); doi: 10.1117/12.926779
Proc. SPIE 8549, Structural And Gas Sensing Properties of Sprayed Antimony Doped Tin-Oxide Thin Films., 85490Y (15 October 2012); doi: 10.1117/12.926870
Proc. SPIE 8549, Metal organic chemical vapor deposition and investigation of structural, optical and gas sensing characteristics of ZnO thin film grown on quartz, 85490Z (15 October 2012); doi: 10.1117/12.927024
Proc. SPIE 8549, stability study on ceramic mercuric iodide (red) X-ray sensor, 854910 (15 October 2012); doi: 10.1117/12.924240
Proc. SPIE 8549, Design of vertical packaging technology for RF MEMS switch, 854911 (15 October 2012); doi: 10.1117/12.924260
Proc. SPIE 8549, Proton beam writing for minimum step lithography in multilayer patterning, 854912 (15 October 2012); doi: 10.1117/12.927402
Proc. SPIE 8549, Optical interrogation of a pressure sensor fabricated using MEMS technology, 854913 (15 October 2012); doi: 10.1117/12.927410
Proc. SPIE 8549, Modeling and Simulation of Capacitive Sensor for E.Coli bacteria in water, 854914 (15 October 2012); doi: 10.1117/12.927438
Proc. SPIE 8549, Low Temperature Tin Oxide (SnO2) Nanowire Gas Sensor, 854915 (15 October 2012); doi: 10.1117/12.924698
Proc. SPIE 8549, A Resistive Type Humidity Sensor Based on ZnO-SnO2 Nanocomposite, 854916 (15 October 2012); doi: 10.1117/12.924796
Proc. SPIE 8549, Design aspects of electrostatically driven MEMS adaptive mirror, 854917 (15 October 2012); doi: 10.1117/12.925110
Proc. SPIE 8549, Tunable MEMS Diffraction Gratings, 854918 (15 October 2012); doi: 10.1117/12.925113
Proc. SPIE 8549, Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compounds, 854919 (15 October 2012); doi: 10.1117/12.925153
Proc. SPIE 8549, Low Cost, Disposable Colorimetric Sensor for Quantitative Detection of Ammonia Gas, 85491A (15 October 2012); doi: 10.1117/12.925176
Proc. SPIE 8549, MEMS Deformable Mirrors: Technology and Applications, 85491B (15 October 2012); doi: 10.1117/12.925268
Proc. SPIE 8549, Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachining, 85491C (15 October 2012); doi: 10.1117/12.925318
Proc. SPIE 8549, Design and mathematical model of a ZnO-based MEMS acoustic sensor, 85491D (15 October 2012); doi: 10.1117/12.925523
Proc. SPIE 8549, Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices, 85491E (15 October 2012); doi: 10.1117/12.925526
Proc. SPIE 8549, Design and Simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications, 85491F (15 October 2012); doi: 10.1117/12.925703
Proc. SPIE 8549, Design of Piezoresistive MEMS Absolute Pressure Sensor, 85491G (15 October 2012); doi: 10.1117/12.923644
Proc. SPIE 8549, FEM Simulation of CMUT Cell for NDT Application, 85491H (15 October 2012); doi: 10.1117/12.926046
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor, 85491I (15 October 2012); doi: 10.1117/12.923196
Proc. SPIE 8549, On the calculation of energy eigenstates of electrons in a spherical quantum dot, 85491J (15 October 2012); doi: 10.1117/12.923801
Proc. SPIE 8549, Design and fabrication of carbon nano-structured flexible antenna, 85491K (15 October 2012); doi: 10.1117/12.924267
Proc. SPIE 8549, Characterization of traps in SiGe:C channel heterojunction PMOSFETs, 85491L (15 October 2012); doi: 10.1117/12.924516
Proc. SPIE 8549, Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique, 85491M (15 October 2012); doi: 10.1117/12.924629
Proc. SPIE 8549, An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges, 85491N (15 October 2012); doi: 10.1117/12.924805