PROCEEDINGS VOLUME 8606
SPIE LASE | 2-7 FEBRUARY 2013
Vertical External Cavity Surface Emitting Lasers (VECSELs) III
Proceedings Volume 8606 is from: Logo
SPIE LASE
2-7 February 2013
San Francisco, California, United States
Front Matter: Volume 8606
Proc. SPIE 8606, Front Matter: Volume 8606, 860601 (13 March 2013); doi: 10.1117/12.2025055
Power Scaling I
Proc. SPIE 8606, Design of high-efficiency semiconductor disk lasers, 860602 (26 February 2013); doi: 10.1117/12.2003818
Proc. SPIE 8606, High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm, 860604 (18 February 2013); doi: 10.1117/12.2004904
Ultrafast VECSELs I: High Average Power
Proc. SPIE 8606, Passively mode-locked femtosecond VECSELs with high average output power, 860605 (18 February 2013); doi: 10.1117/12.2003596
Proc. SPIE 8606, Characterization of nonlinear gain parameters in VECSELs to optimize femtosecond high average power operation, 860606 (18 February 2013); doi: 10.1117/12.2002507
Proc. SPIE 8606, Towards VECSEL frequency combs, 860607 (18 February 2013); doi: 10.1117/12.2002297
Proc. SPIE 8606, Supercontinuum generation with femtosecond pulse fiber amplified VECSELs, 860608 (18 February 2013); doi: 10.1117/12.2004240
Intracavity Techniques
Proc. SPIE 8606, Intracavity-enhanced laser cooling of solids using high power VECSELs at 1020 nm, 86060A (26 February 2013); doi: 10.1117/12.2003561
Proc. SPIE 8606, 30 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL , 86060B (18 February 2013); doi: 10.1117/12.2001810
Spectral Coverage
Proc. SPIE 8606, Investigation of InAs quantum dashes for 1.45-2.1 µm vertical external cavity surface emitting laser active regions, 86060D (26 February 2013); doi: 10.1117/12.2005427
Proc. SPIE 8606, TEM based analysis of III-Sb VECSELs on GaAs substrates for improved laser performance, 86060E (26 February 2013); doi: 10.1117/12.2005301
Electrical Pumping and Device Packaging
Proc. SPIE 8606, Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands, 86060F (18 February 2013); doi: 10.1117/12.2002461
Proc. SPIE 8606, Passively mode-locked electrically pumped VECSELs, 86060G (18 February 2013); doi: 10.1117/12.2002391
Proc. SPIE 8606, Analysis of single-mode efficiency of electrically pumped VECSELs, 86060H (18 February 2013); doi: 10.1117/12.2002045
Proc. SPIE 8606, Automated assembly of VECSEL components, 86060I (18 February 2013); doi: 10.1117/12.2006326
Power Scaling II: Thermal Management
Proc. SPIE 8606, Effects of cryogenic temperatures on the performance of CW VECSELs, 86060L (18 February 2013); doi: 10.1117/12.2002368
Ultrafast VECSELs II
Proc. SPIE 8606, Self mode locked OPSL: role of high-order modes in starting self-mode-locked operation (withdrawal notice), 86060M (18 February 2013); doi: 10.1117/12.2006159
Proc. SPIE 8606, Advances in mode-locked semiconductor disk lasers, 86060N (18 February 2013); doi: 10.1117/12.2004971
Proc. SPIE 8606, Generation of 200-fs pulses with a short microcavity VECSEL, 86060O (18 February 2013); doi: 10.1117/12.2004384
Proc. SPIE 8606, Exploring spatio-temporal dynamics of an optically pumped semiconductor laser with intracavity second harmonic generation (withdrawal notice), 86060P (18 February 2013); doi: 10.1117/12.2003742
Single Frequency
Proc. SPIE 8606, Noise properties of NIR and MIR VECSELs, 86060Q (18 February 2013); doi: 10.1117/12.1000329
Proc. SPIE 8606, Optically pumped external-cavity semiconductor lasers for precision spectroscopy and laser cooling of atomic Hg, 86060R (18 February 2013); doi: 10.1117/12.2004351
Proc. SPIE 8606, Tunable high-purity microwave signal generation from a dual-frequency VECSEL at 852 nm, 86060S (21 February 2013); doi: 10.1117/12.2014240
Poster Session
Proc. SPIE 8606, Efficient thermoelectric cooling of concentrated heat loads, 86060T (18 February 2013); doi: 10.1117/12.2002067
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