PROCEEDINGS VOLUME 8625
SPIE OPTO | 2-7 FEBRUARY 2013
Gallium Nitride Materials and Devices VIII
IN THIS VOLUME

0 Sessions, 52 Papers, 0 Presentations
Growth I  (2)
Growth II  (3)
Doping  (1)
FETs  (4)
Lasers I  (4)
Lasers II  (4)
LED I  (1)
LED II  (2)
LED III  (2)
LED IV  (2)
Proceedings Volume 8625 is from: Logo
SPIE OPTO
2-7 February 2013
San Francisco, California, United States
Front Matter: Volume 8625
Proc. SPIE 8625, Front Matter: Volume 8625, 862501 (8 April 2013); doi: 10.1117/12.2025079
Growth I
Proc. SPIE 8625, Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth, 862502 (27 March 2013); doi: 10.1117/12.2007258
Proc. SPIE 8625, Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy, 862503 (4 March 2013); doi: 10.1117/12.2007376
Growth II
Proc. SPIE 8625, Effect of internally focused laser processing of sapphire substrate on bowing management for III-nitride epitaxy, 862507 (27 March 2013); doi: 10.1117/12.2007450
Proc. SPIE 8625, Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration, 862509 (4 March 2013); doi: 10.1117/12.2002042
Proc. SPIE 8625, HVPE-GaN growth on ammonothermal GaN crystals, 86250B (4 March 2013); doi: 10.1117/12.2003699
Doping
Proc. SPIE 8625, The source of holes in p-type InxGa1-xN films, 86250D (27 March 2013); doi: 10.1117/12.2002569
Material Characterization
Proc. SPIE 8625, Defects in nitrides, positron annihilation spectroscopy, 86250G (22 February 2013); doi: 10.1117/12.2000251
Proc. SPIE 8625, Short period InN/nGaN superlattices: experiment versus theory, 86250J (27 March 2013); doi: 10.1117/12.2004313
Proc. SPIE 8625, Defects generation and annihilation in GaN grown on patterned silicon substrate, 86250K (27 March 2013); doi: 10.1117/12.2002738
Proc. SPIE 8625, Nonlinear absorption in InN under resonant- and non-resonant excitation, 86250L (4 March 2013); doi: 10.1117/12.2001769
Nano Structures and Devices I
Proc. SPIE 8625, Raman spectroscopy of GaN and AlGaN nanowires: from ensemble to single nanowire study, 86250P (4 March 2013); doi: 10.1117/12.2001564
Nano Structures and Devices II
Proc. SPIE 8625, Nanolithography for 3-dimentional nanostructures: enhancement of light output power in vertical light emitting diodes, 86250R (4 March 2013); doi: 10.1117/12.2004038
Proc. SPIE 8625, High efficient InGaN blue light emitting diode with embedded nanoporous structure, 86250S (4 March 2013); doi: 10.1117/12.2002325
Proc. SPIE 8625, Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers , 86250T (4 March 2013); doi: 10.1117/12.2003949
FETs
Proc. SPIE 8625, GaN power devices for automotive applications, 86250V (27 March 2013); doi: 10.1117/12.2002248
Proc. SPIE 8625, The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors, 86250W (27 March 2013); doi: 10.1117/12.2007287
Proc. SPIE 8625, Junction temperature measurements and reliability of GaN FETs, 86250X (4 March 2013); doi: 10.1117/12.2007817
Proc. SPIE 8625, Traps and defects in pre- and post-proton irradiated AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes, 86250Z (4 March 2013); doi: 10.1117/12.2001526
Lasers I
Proc. SPIE 8625, Nonpolar and semipolar GaN, optical gain and efficiency, 862511 (4 March 2013); doi: 10.1117/12.2000155
Proc. SPIE 8625, True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates, 862512 (4 March 2013); doi: 10.1117/12.2001997
Proc. SPIE 8625, Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate, 862513 (4 March 2013); doi: 10.1117/12.2002440
Proc. SPIE 8625, Picosecond pulse generation in monolithic GaN-based multi-section laser diodes, 862515 (4 March 2013); doi: 10.1117/12.2001774
Lasers II
Proc. SPIE 8625, Intersubband spontaneous emission from GaN-based THz quantum cascade laser, 862516 (27 March 2013); doi: 10.1117/12.2003309
Proc. SPIE 8625, Latest developments in AlGaInN laser diode technology, 862518 (27 March 2013); doi: 10.1117/12.2006079
Proc. SPIE 8625, Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition, 862519 (4 March 2013); doi: 10.1117/12.2008830
Proc. SPIE 8625, Tunable light source with GaN-based violet laser diode, 86251A (4 March 2013); doi: 10.1117/12.2002000
LED I
Proc. SPIE 8625, Prospect of GaN light-emitting diodes grown on glass substrates, 86251C (27 March 2013); doi: 10.1117/12.2007677
LED II
Proc. SPIE 8625, Effects of local structure on optical properties in green-yellow InGaN/GaN quantum wells, 86251G (27 March 2013); doi: 10.1117/12.2002707
Proc. SPIE 8625, InGaN based multi-double heterostructure light-emitting diodes with electron injector layers, 86251J (4 March 2013); doi: 10.1117/12.2003162
LED III
Proc. SPIE 8625, Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theory, 86251M (27 March 2013); doi: 10.1117/12.2005134
Proc. SPIE 8625, Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs, 86251P (27 March 2013); doi: 10.1117/12.2003542
LED IV
Proc. SPIE 8625, Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates, 86251Q (27 March 2013); doi: 10.1117/12.2002322
Proc. SPIE 8625, High optical power ultraviolet superluminescent InGaN diodes, 86251S (4 March 2013); doi: 10.1117/12.2002488
Novel Devices
Proc. SPIE 8625, X-ray detectors based on GaN, 86251W (4 March 2013); doi: 10.1117/12.2007827
Proc. SPIE 8625, Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguides, 86251X (4 March 2013); doi: 10.1117/12.2003117
Proc. SPIE 8625, High voltage bulk GaN-based photoconductive switches for pulsed power applications, 86251Z (4 March 2013); doi: 10.1117/12.2005548
Poster Session
Proc. SPIE 8625, Thermal properties of InGaN laser diodes and arrays, 862521 (4 March 2013); doi: 10.1117/12.2002494
Proc. SPIE 8625, Nonradiative recombination due to point defects in GaInN/GaN quantum wells induced by Ar implantation, 862522 (27 March 2013); doi: 10.1117/12.2002843
Proc. SPIE 8625, Design and geometry of hybrid white light-emitted diodes for efficient energy transfer from the quantum well to the nanocrystals, 862524 (27 March 2013); doi: 10.1117/12.2003632
Proc. SPIE 8625, Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition, 862525 (27 March 2013); doi: 10.1117/12.2003673
Proc. SPIE 8625, Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes, 862526 (4 March 2013); doi: 10.1117/12.2003681
Proc. SPIE 8625, Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy, 862527 (27 March 2013); doi: 10.1117/12.2003850
Proc. SPIE 8625, Diffusion-assisted current spreading for III-nitride light-emitting applications, 862528 (4 March 2013); doi: 10.1117/12.2000441
Proc. SPIE 8625, Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer, 862529 (27 March 2013); doi: 10.1117/12.2004465
Proc. SPIE 8625, Microwave performance of AlGaN/AlN/GaN-based single and coupled channels HFETs, 86252B (27 March 2013); doi: 10.1117/12.2005165
Proc. SPIE 8625, Linewidth reduction of site-controlled InGaN quantum dots by surface passivation, 86252C (27 March 2013); doi: 10.1117/12.2005194
Proc. SPIE 8625, Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence, 86252D (4 March 2013); doi: 10.1117/12.2005252
Proc. SPIE 8625, GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors, 86252F (4 March 2013); doi: 10.1117/12.2005442
Proc. SPIE 8625, Depth distribution of carrier lifetimes in semipolar (1101) GaN grown by MOCVD on patterned Si substrates, 86252G (4 March 2013); doi: 10.1117/12.2005514
Proc. SPIE 8625, Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects, 86252H (4 March 2013); doi: 10.1117/12.2000558
Proc. SPIE 8625, Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations, 86252I (27 March 2013); doi: 10.1117/12.2006400
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