Proceedings Volume 8626 is from: Logo
SPIE OPTO
2-7 February 2013
San Francisco, California, United States
Front Matter: Volume 8626
Proc. SPIE 8626, Front Matter: Volume 8626, 862601 (9 April 2013); doi: 10.1117/12.2024997
Transparent Conducting Oxides
Proc. SPIE 8626, Model for thickness dependence of mobility and concentration in highly conductive ZnO, 862602 (18 March 2013); doi: 10.1117/12.2001287
Proc. SPIE 8626, Graphene versus oxides for transparent electrode applications, 862603 (18 March 2013); doi: 10.1117/12.2012865
Proc. SPIE 8626, Impact of degenerate n-doping on the optical absorption edge in transparent conducting cadmium oxide, 862604 (18 March 2013); doi: 10.1117/12.2004359
Proc. SPIE 8626, Application of highly conductive ZnO to plasmonics, 862605 (18 March 2013); doi: 10.1117/12.2001613
Doping
Proc. SPIE 8626, Dopant profiles in heavily doped ZnO, 862606 (18 March 2013); doi: 10.1117/12.2009394
Proc. SPIE 8626, Prospects on laser processed wide band gap oxides optical materials, 862607 (18 March 2013); doi: 10.1117/12.2016508
Proc. SPIE 8626, Multidimensional depth profile analysis of oxide layers by plasma profiling techniques: GD-OES and PP-TOFMS, 862608 (18 March 2013); doi: 10.1117/12.2010085
Proc. SPIE 8626, Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals, 862609 (18 March 2013); doi: 10.1117/12.2004460
Proc. SPIE 8626, Enhancement (100 times) of photoluminescence in pulsed laser deposited ZnO thin films by hydrogen ion implantation, 86260A (18 March 2013); doi: 10.1117/12.2004216
Photoresponsivity and Photodetectors
Proc. SPIE 8626, MOCVD growth of ZnO nanowire arrays for advanced UV detectors, 86260B (18 March 2013); doi: 10.1117/12.2009247
Proc. SPIE 8626, Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers, 86260D (18 March 2013); doi: 10.1117/12.2002441
Strongly Correlated Complex Oxides
Proc. SPIE 8626, Properties of high-density two-dimensional electron gases at Mott/band insulator interfaces, 86260F (18 March 2013); doi: 10.1117/12.2009086
ZnO-based Emitters
Proc. SPIE 8626, Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices, 86260L (18 March 2013); doi: 10.1117/12.2009999
Proc. SPIE 8626, On the origin of strain relaxation in epitaxial CdZnO layers, 86260N (18 March 2013); doi: 10.1117/12.2002969
Proc. SPIE 8626, Photonic devices on paper, plastic and textile fabrics, 86260O (18 March 2013); doi: 10.1117/12.2010036
Nanomaterials and Related Devices I
Nanomaterials and Related Devices II
Photovoltaic Applications
Proc. SPIE 8626, Influence of defects in ZnO nanomaterials on the performance of dye-sensitized solar cell and photocatalytic activity, 86260X (18 March 2013); doi: 10.1117/12.2002976
Proc. SPIE 8626, ZnO:Al with tuned properties for photovoltaic applications: thin layers and high mobility material, 86260Y (18 March 2013); doi: 10.1117/12.2001290
Proc. SPIE 8626, Design of oxide structured films for dye-sensitized photovoltaic solar cells, 86260Z (18 March 2013); doi: 10.1117/12.2003138
Proc. SPIE 8626, Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates, 862611 (18 March 2013); doi: 10.1117/12.2010046
Electronic and Structural Phase Transitions
Proc. SPIE 8626, Effect of deposition conditions on the stoichiometry and structural properties of LiNbO3 thin films deposited by MOCVD , 862612 (18 March 2013); doi: 10.1117/12.2010105
Proc. SPIE 8626, Nanothermochromic diffraction gratings with giant switching contrast based on the metal-insulator transition of vanadium dioxide, 862614 (18 March 2013); doi: 10.1117/12.2001809
Thin Film Transistors
Proc. SPIE 8626, The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors, 862615 (18 March 2013); doi: 10.1117/12.2013277
Proc. SPIE 8626, TiO2 thin film transistor by atomic layer deposition, 862616 (18 March 2013); doi: 10.1117/12.2005528
Photonic Materials and Devices I
Proc. SPIE 8626, C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices, 862618 (18 March 2013); doi: 10.1117/12.2013532
Photonic Materials and Devices II
Proc. SPIE 8626, Crystallization effect on rare-earth activated biocompatible glass-ceramics, 86261A (18 March 2013); doi: 10.1117/12.2002090
Proc. SPIE 8626, Defects study of MOCVD grown β-Ga2O3 films, 86261B (18 March 2013); doi: 10.1117/12.2002913
Proc. SPIE 8626, Nonlinear optical photonic crystal waveguide with TiO2 material, 86261C (18 March 2013); doi: 10.1117/12.2002005
Proc. SPIE 8626, Optimizing anatase-TiO2 deposition for low-loss planar waveguides, 86261D (18 March 2013); doi: 10.1117/12.2005169
Poster Session
Proc. SPIE 8626, Development of tellurium oxide and lead-bismuth oxide glasses for mid-wave infra-red transmission optics, 86261F (18 March 2013); doi: 10.1117/12.2000315
Proc. SPIE 8626, Synthesis and characterization of core@shell (ZnO@gamma-Fe2O3) structured nanoparticles with two morphologies , 86261G (18 March 2013); doi: 10.1117/12.2002862
Proc. SPIE 8626, Influence of the metallic electrodes on the contact resistance of the ink-jet printed In-Ga-Zn oxide TFTs, 86261H (18 March 2013); doi: 10.1117/12.2002885
Proc. SPIE 8626, A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors, 86261I (18 March 2013); doi: 10.1117/12.2002894
Proc. SPIE 8626, Various post-annealing treatments on aluminum doped zinc oxide films fabricated by ion beam co-sputtering, 86261J (18 March 2013); doi: 10.1117/12.2002979
Proc. SPIE 8626, Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD, 86261K (18 March 2013); doi: 10.1117/12.2003029
Proc. SPIE 8626, Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes, 86261L (18 March 2013); doi: 10.1117/12.2003166
Proc. SPIE 8626, Electrodeposited ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue, 86261N (18 March 2013); doi: 10.1117/12.2003474
Proc. SPIE 8626, P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique, 86261O (18 March 2013); doi: 10.1117/12.2004173
Proc. SPIE 8626, Synthesis of Gd2O2S:Tb nanoparticles and optical characterization, 86261P (18 March 2013); doi: 10.1117/12.2004659
Proc. SPIE 8626, Impact of growth conditions on ZnO homoepitaxial films on ZnO substrates by plasma-assisted molecular beam epitaxy, 86261Q (18 March 2013); doi: 10.1117/12.2004873
Proc. SPIE 8626, ZnO based optical modulator in the visible wavelengths, 86261T (18 March 2013); doi: 10.1117/12.2005558
Proc. SPIE 8626, Effect of transition metal oxide anode interlayer in bulk heterojunction solar cells, 86261V (18 March 2013); doi: 10.1117/12.2008297
Proc. SPIE 8626, Effect of electrical properties, transmittance, and morphology of ITO electrode on polymer solar cells characteristics, 86261W (18 March 2013); doi: 10.1117/12.2008448
Proc. SPIE 8626, Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition, 86261X (18 March 2013); doi: 10.1117/12.2013601
Proc. SPIE 8626, Optical, microstructural, vibrational and theoretical studies of p-type SrCu2O2 and BaCu2O2 transparent conductive oxides, 86261Y (18 March 2013); doi: 10.1117/12.2014328
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