PROCEEDINGS VOLUME 8631
SPIE OPTO | 2-7 FEBRUARY 2013
Quantum Sensing and Nanophotonic Devices X
Proceedings Volume 8631 is from: Logo
SPIE OPTO
2-7 February 2013
San Francisco, California, United States
Front Matter: Volume 8631
Proc. SPIE 8631, Front Matter: Volume 8631, 863101 (4 February 2013); doi: 10.1117/12.2019896
Keynote Session
Proc. SPIE 8631, Room temperature GaN-based spin polarized emitters, 863104 (4 February 2013); doi: 10.1117/12.2012586
Proc. SPIE 8631, Issues in nanophotonics: coupling and phase in resonant tunneling, 863106 (4 February 2013); doi: 10.1117/12.2013850
THz QCLs
Proc. SPIE 8631, Widely-tuned room-temperature terahertz quantum cascade laser sources, 863108 (4 February 2013); doi: 10.1117/12.2019101
Proc. SPIE 8631, Quantum-limited linewidth in THz quantum cascade lasers, 863109 (4 February 2013); doi: 10.1117/12.2006029
IR Spectroscopy Techniques
Proc. SPIE 8631, Reflection-absorption infrared spectroscopy of thin films using an external cavity quantum cascade laser, 86310C (4 February 2013); doi: 10.1117/12.2002849
Proc. SPIE 8631, A field-deployable compound-specific isotope analyzer based on quantum cascade laser and hollow waveguide, 86310D (4 February 2013); doi: 10.1117/12.2003261
Proc. SPIE 8631, Progress toward mid-IR chip-scale integrated-optic TDLAS gas sensors, 86310E (4 February 2013); doi: 10.1117/12.2008953
Proc. SPIE 8631, Phase-locking of surface-emitting THz quantum cascade laser arrays, 86310F (4 February 2013); doi: 10.1117/12.2004125
Plasmon Sensing
Proc. SPIE 8631, Differential Fano interference spectroscopy of subwavelength hole arrays for mid-infrared mass sensors, 86310J (4 February 2013); doi: 10.1117/12.2004061
Mid-IR QCLs
Proc. SPIE 8631, Continuous wave, room temperature operation of λ ~ 3um quantum cascade laser, 86310M (4 February 2013); doi: 10.1117/12.2019105
Proc. SPIE 8631, Dual section quantum cascade lasers with wide electrical tuning, 86310P (4 February 2013); doi: 10.1117/12.2008506
QWIPS/QDIPs
Proc. SPIE 8631, Multi-color QWIP FPAs for hyperspectral thermal emission instruments, 86310R (4 February 2013); doi: 10.1117/12.2003323
Proc. SPIE 8631, Modulation transfer function measurements of QWIP and superlattice focal plane arrays, 86310S (4 February 2013); doi: 10.1117/12.2009121
Proc. SPIE 8631, Dark current in GaAs/AlxGa1-xAs quantum well infrared detectors, 86310T (4 February 2013); doi: 10.1117/12.2000563
Environmental Monitoring
Proc. SPIE 8631, Mid- infrared semiconductor laser based trace gas sensor technologies for environmental monitoring and industrial process control, 86310W (4 February 2013); doi: 10.1117/12.2008701
Proc. SPIE 8631, Advanced sensors for Earth-sciences applications, 86310X (4 February 2013); doi: 10.1117/12.2006905
Proc. SPIE 8631, Atmospheric and environmental sensing by photonic absorption spectroscopy, 86310Y (4 February 2013); doi: 10.1117/12.2004803
Proc. SPIE 8631, Part-per-trillion level detection of SF6 using a single-mode fiber-coupled quantum cascade laser and a quartz enhanced photoacoustic sensor, 86310Z (4 February 2013); doi: 10.1117/12.2001638
Proc. SPIE 8631, Infrared scattering scanning near-field optical microscopy using an external cavity quantum cascade laser for nanoscale chemical imaging and spectroscopy of explosive residues, 863110 (4 February 2013); doi: 10.1117/12.2004954
III-V on Si Integration
Proc. SPIE 8631, Gallium nitride on silicon for consumer and scalable photonics, 863112 (4 February 2013); doi: 10.1117/12.2008788
Proc. SPIE 8631, Monolithic tunable single source in the mid-IR for spectroscopy, 863113 (4 February 2013); doi: 10.1117/12.2009282
Proc. SPIE 8631, Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuit, 863114 (4 February 2013); doi: 10.1117/12.2000707
Nanomaterials I
Proc. SPIE 8631, Nano photoconductive switches for microwave applications, 863117 (4 February 2013); doi: 10.1117/12.2002068
Proc. SPIE 8631, Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires, 863118 (4 February 2013); doi: 10.1117/12.2008676
Proc. SPIE 8631, Tailoring of optical properties of porous nanocolumnar structures and their device applications by oblique angle deposition, 863119 (4 February 2013); doi: 10.1117/12.2005700
Si APDs
Proc. SPIE 8631, Large-area CMOS SPADs with very low dark counting rate, 86311B (4 February 2013); doi: 10.1117/12.2004209
Proc. SPIE 8631, Low afterpulsing and narrow timing response InGaAs/InP Single-Photon Avalanche Diode, 86311C (4 February 2013); doi: 10.1117/12.2004801
Proc. SPIE 8631, A 48-pixel array of single photon avalanche diodes for multispot single molecule analysis, 86311D (4 February 2013); doi: 10.1117/12.2003984
Proc. SPIE 8631, Monolithic time-to-digital converter chips for time-correlated single-photon counting and fluorescence lifetime measurements, 86311F (4 February 2013); doi: 10.1117/12.2005537
Proc. SPIE 8631, InGaAs/InP SPAD photon-counting module with auto-calibrated gate-width generation and remote control, 86311G (4 February 2013); doi: 10.1117/12.2004863
High-Temperature Photodetectors
Proc. SPIE 8631, InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures, 86311I (4 February 2013); doi: 10.1117/12.2007612
Proc. SPIE 8631, High operation temperature of HgCdTe photodiodes by bulk defect passivation , 86311J (4 February 2013); doi: 10.1117/12.2004708
Proc. SPIE 8631, High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices, 86311K (4 February 2013); doi: 10.1117/12.2019103
Proc. SPIE 8631, Noise in InAs/GaSb type-II superlattice photodiodes, 86311M (4 February 2013); doi: 10.1117/12.2013854
6.1 A Materials and Lasers
Proc. SPIE 8631, Towards the production of very low defect GaSb and InSb substrates: bulk crystal growth, defect analysis and scaling challenges, 86311N (4 February 2013); doi: 10.1117/12.2005130
Proc. SPIE 8631, Mid-IR distributed-feedback interband cascade lasers, 86311O (4 February 2013); doi: 10.1117/12.2004163
Proc. SPIE 8631, Low threshold interband cascade lasers, 86311P (4 February 2013); doi: 10.1117/12.2004680
Proc. SPIE 8631, InAs-based dilute nitride materials and devices for the mid-infrared spectral range, 86311Q (4 February 2013); doi: 10.1117/12.2008800
Proc. SPIE 8631, Mid-infrared external cavity lasing through suppression of Fabry-Perot oscillation, 86311R (4 February 2013); doi: 10.1117/12.2005196
Non-Linear Optics
Proc. SPIE 8631, The Micro-OPO: an alternative for ultra-compact largely tuneable mid-infrared sources, 86311S (4 February 2013); doi: 10.1117/12.2008952
Proc. SPIE 8631, Fabrication and characterization of lateral polar GaN structures for second harmonic generation, 86311T (4 February 2013); doi: 10.1117/12.2008827
Proc. SPIE 8631, Mid-wave infrared and terahertz quantum cascade lasers based on resonant nonlinear frequency mixing, 86311V (4 February 2013); doi: 10.1117/12.2003827
Proc. SPIE 8631, Recent developments in high-power two-wavelength vertical external-cavity surface-emitting lasers, 86311W (4 February 2013); doi: 10.1117/12.2008673
Plasmonics
Proc. SPIE 8631, GaSb-based all-semiconductor mid-IR plasmonics, 863120 (4 February 2013); doi: 10.1117/12.2007903
Nanophotonics
Proc. SPIE 8631, Infrared spectral filters based on guided-mode resonance with subwavelength structures, 863122 (4 February 2013); doi: 10.1117/12.2002072
Proc. SPIE 8631, Ultrastrong optical modulation in waveguides by conducting interfaces, 863123 (4 February 2013); doi: 10.1117/12.2002858
Nanomaterials II
Proc. SPIE 8631, Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications, 863126 (4 February 2013); doi: 10.1117/12.2012670
Proc. SPIE 8631, Short-wave infrared colloidal quantum dot photodetectors on silicon, 863127 (4 February 2013); doi: 10.1117/12.2001246
Proc. SPIE 8631, Optoelectronic properties of hexagonal boron nitride epilayers, 863128 (4 February 2013); doi: 10.1117/12.2009115
Proc. SPIE 8631, Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method, 863129 (4 February 2013); doi: 10.1117/12.2014610
Proc. SPIE 8631, Transport properties related to spin-orbit interaction, 86312A (4 February 2013); doi: 10.1117/12.2010757
THz and Infrared Technology
Proc. SPIE 8631, Quantum-dot micropillars for parametric THz emission, 86312B (4 February 2013); doi: 10.1117/12.2009452
Proc. SPIE 8631, Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance, 86312C (4 February 2013); doi: 10.1117/12.2006874
Proc. SPIE 8631, Room-temperature nanowire terahertz photodetectors, 86312E (4 February 2013); doi: 10.1117/12.2004193
Proc. SPIE 8631, Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography, 86312F (4 February 2013); doi: 10.1117/12.2003903