PROCEEDINGS VOLUME 8640
SPIE OPTO | 2-7 FEBRUARY 2013
Novel In-Plane Semiconductor Lasers XII
Proceedings Volume 8640 is from: Logo
SPIE OPTO
2-7 February 2013
San Francisco, California, United States
Front Matter: Volume 8640
Proc. SPIE 8640, Front Matter: Volume 8640, 864001 (8 April 2013); doi: 10.1117/12.2021932
Comms: Materials to Integration
Proc. SPIE 8640, High modal gain 1.5 µm InP based quantum dot lasers: dependence of static properties on the active layer design, 864004 (5 March 2013); doi: 10.1117/12.2002420
Proc. SPIE 8640, Effect of optical waveguiding mechanism on the lasing action of chirped InAs/AlGaInAs/InP quantum dash lasers, 864005 (4 March 2013); doi: 10.1117/12.2003462
DFBs and DBRs
Proc. SPIE 8640, Monolithic wide tunable laser diodes for gas sensing at 2100 nm, 864008 (4 March 2013); doi: 10.1117/12.2004020
Proc. SPIE 8640, Narrow-linewidth three-electrode regrowth-free semiconductor DFB lasers with uniform surface grating, 864009 (4 March 2013); doi: 10.1117/12.2005368
Proc. SPIE 8640, Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings, 86400A (4 March 2013); doi: 10.1117/12.2002474
Red, Green, Blue
Proc. SPIE 8640, 654 nm broad area lasers for QCW operation with a maximal facet load of 76 mW/µm, 86400D (4 March 2013); doi: 10.1117/12.2001806
Proc. SPIE 8640, Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications, 86400E (4 March 2013); doi: 10.1117/12.2003447
Proc. SPIE 8640, Continuous-wave operation of green/yellow laser diodes based on BeZnCdSe quantum wells, 86400F (4 March 2013); doi: 10.1117/12.2007351
Proc. SPIE 8640, Power blue and green laser diodes and their applications, 86400G (4 March 2013); doi: 10.1117/12.2006220
Nitrides
Proc. SPIE 8640, Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes, 86400H (4 March 2013); doi: 10.1117/12.2004483
Proc. SPIE 8640, InGaN/GaN quantum dot blue and green lasers, 86400J (4 March 2013); doi: 10.1117/12.2007025
Mid-IR Lasers and Optics
Proc. SPIE 8640, Recent progress in development of InAs-based interband cascade lasers, 86400Q (4 March 2013); doi: 10.1117/12.2005271
Proc. SPIE 8640, Extremely temperature-insensitive continuous-wave broadband quantum cascade lasers, 86400R (4 March 2013); doi: 10.1117/12.2003241
Silicon Based Lasers
Proc. SPIE 8640, Optimization of the hybrid silicon photonic integrated circuit platform, 86400U (4 March 2013); doi: 10.1117/12.2002967
Microcavity and Photonic Crystal
Proc. SPIE 8640, Electrical injection schemes for nanolasers, 86400Y (4 March 2013); doi: 10.1117/12.2002484
Proc. SPIE 8640, Towards a photonic crystal mode-locked laser, 86400Z (4 March 2013); doi: 10.1117/12.2005418
THz QCLs
Proc. SPIE 8640, THz quantum cascade lasers for operation above cryogenic temperatures, 864014 (5 March 2013); doi: 10.1117/12.2000858
Long-Wavelength Mid-IR and THz QCLs
Proc. SPIE 8640, Long-wavelength ( [lambda]≈ 12- 16 µm) and cascaded transition quantum cascade lasers , 864015 (4 March 2013); doi: 10.1117/12.2002246
Proc. SPIE 8640, Room temperature continuous wave operation of long wavelength (9-11 μm) distributed feedback quantum cascade lasers for glucose detection, 864016 (4 March 2013); doi: 10.1117/12.2004895
Proc. SPIE 8640, Towards nanowire-based terahertz quantum cascade lasers: prospects and technological challenges, 864018 (4 March 2013); doi: 10.1117/12.2004545
High-Power and Tunable QCLs
Proc. SPIE 8640, Multiwatt long wavelength quantum cascade lasers based on high strain composition with 70% injection efficiency, 864019 (4 March 2013); doi: 10.1117/12.2000423
Proc. SPIE 8640, Single-mode quantum cascade lasers with asymmetric Mach-Zehnder interferometer type Fabry-Perot cavity, 86401E (4 March 2013); doi: 10.1117/12.2012094
High Power I
Proc. SPIE 8640, Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers , 86401F (4 March 2013); doi: 10.1117/12.2003465
Proc. SPIE 8640, Catastrophic degradation in high-power InGaAs-AlGaAs strained quantum well lasers and InAs-GaAs quantum dot lasers, 86401G (4 March 2013); doi: 10.1117/12.2006624
Proc. SPIE 8640, Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers, 86401H (4 March 2013); doi: 10.1117/12.2008319
Proc. SPIE 8640, Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm, 86401I (4 March 2013); doi: 10.1117/12.2003785
Proc. SPIE 8640, 1120nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy , 86401J (4 March 2013); doi: 10.1117/12.2002487
High Power II
Proc. SPIE 8640, 76% efficient cryogenically-cooled eyesafe diode laser for resonant pumping of Er-doped gain media, 86401L (4 March 2013); doi: 10.1117/12.2005452
Proc. SPIE 8640, Dynamic response of a monolithic master-oscillator power-amplifier at 1.5 µm , 86401M (4 March 2013); doi: 10.1117/12.2004366
Proc. SPIE 8640, Dynamics of high power gain switched DFB RW laser under high current pulse excitation on a nanosecond time scale, 86401N (5 March 2013); doi: 10.1117/12.2002273
Short-Wavelength Mid-IR QCLs and Diode Lasers
Proc. SPIE 8640, High-power diode lasers between 1.8µm and 3.0µm , 86401P (4 March 2013); doi: 10.1117/12.2003948
Proc. SPIE 8640, Analysis of thermally activated leakage current in a low-threshold-current quantum-cascade laser emitting at 3.9 μm, 86401S (6 March 2013); doi: 10.1117/12.2002590
Poster Session
Proc. SPIE 8640, 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth, 86401U (4 March 2013); doi: 10.1117/12.2004336
Proc. SPIE 8640, Transverse mode control in quantum cascade lasers via lossy lateral constrictions, 86401V (4 March 2013); doi: 10.1117/12.2009408
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