PROCEEDINGS VOLUME 8679
SPIE ADVANCED LITHOGRAPHY | 24-28 FEBRUARY 2013
Extreme Ultraviolet (EUV) Lithography IV
Proceedings Volume 8679 is from: Logo
SPIE ADVANCED LITHOGRAPHY
24-28 February 2013
San Jose, California, United States
Front Matter: Volume 8679
Proc. SPIE 8679, Front Matter: Volume 8679, 867901 (24 April 2013); doi: 10.1117/12.2027004
Invited I
Proc. SPIE 8679, Effects of multilayer period on EUVL imaging for 2X node and beyond, 867903 (1 April 2013); doi: 10.1117/12.2011076
Proc. SPIE 8679, Investigation of EUV pellicle feasibility, 867904 (1 April 2013); doi: 10.1117/12.2015833
Proc. SPIE 8679, EUV resist materials design for 15nm half pitch and below, 867905 (1 April 2013); doi: 10.1117/12.2011357
EUV Resists: Joint Session with Conferences 8679 and 8682
Proc. SPIE 8679, Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning, 867906 (1 April 2013); doi: 10.1117/12.2011490
Proc. SPIE 8679, Effect of leaving group design on EUV lithography performance, 867907 (1 April 2013); doi: 10.1117/12.2011600
Sources
Proc. SPIE 8679, LPP-EUV light source development for high volume manufacturing lithography, 86790A (8 April 2013); doi: 10.1117/12.2014139
Proc. SPIE 8679, Advances in computer simulations of LPP sources for EUV lithography, 86790B (1 April 2013); doi: 10.1117/12.2011503
Proc. SPIE 8679, Lifetime and refurbishment of multilayer LPP collector mirrors, 86790C (1 April 2013); doi: 10.1117/12.2015492
Proc. SPIE 8679, Contamination concerns at the intermediate focus of an extreme ultraviolet light source, 86790D (1 April 2013); doi: 10.1117/12.2011612
Mask I
Proc. SPIE 8679, Dressed-photon nanopolishing for extreme ultraviolet mask substrate defect mitigation, 86790F (1 April 2013); doi: 10.1117/12.2011260
Proc. SPIE 8679, EUV mask defect analysis from mask to wafer printing, 86790G (1 April 2013); doi: 10.1117/12.2010091
Proc. SPIE 8679, Defect printability comparing actinic printing with advanced simulation for EUV masks, 86790H (1 April 2013); doi: 10.1117/12.2011493
Proc. SPIE 8679, EUV actinic blank inspection: from prototype to production, 86790I (1 April 2013); doi: 10.1117/12.2011776
Resist Outgassing
Proc. SPIE 8679, Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV, 86790K (1 April 2013); doi: 10.1117/12.2011541
Proc. SPIE 8679, Resist outgassing contamination growth results using both photon and electron exposures, 86790L (1 April 2013); doi: 10.1117/12.2011606
Proc. SPIE 8679, Study of EUV outgassing spatial distribution toward witness plate in the EUV outgas tester, 86790M (1 April 2013); doi: 10.1117/12.2011709
Proc. SPIE 8679, Balancing lithographic performance and resist outgassing in EUV resists, 86790O (1 April 2013); doi: 10.1117/12.2010794
Optics and Metrology
Proc. SPIE 8679, EUVL resist-based aberration metrology, 86790P (1 April 2013); doi: 10.1117/12.2010132
Proc. SPIE 8679, In situ optical testing of exposure tools via localized wavefront curvature sensing, 86790Q (1 April 2013); doi: 10.1117/12.2013880
Proc. SPIE 8679, Application of phase shift focus monitor in EUVL process control, 86790T (1 April 2013); doi: 10.1117/12.2011342
OPC and Modeling
Proc. SPIE 8679, EUV multilayer defect compensation (MDC) by absorber pattern modification, film deposition, and multilayer peeling techniques, 86790U (1 April 2013); doi: 10.1117/12.2014265
Proc. SPIE 8679, Evaluation of methods to improve EUV OPC model accuracy, 86790V (1 April 2013); doi: 10.1117/12.2009281
Proc. SPIE 8679, Fast 3D thick mask model for full-chip EUVL simulations, 86790W (1 April 2013); doi: 10.1117/12.2010818
Proc. SPIE 8679, Process and proximity correction, and verification for extreme ultraviolet lithography, 86790X (1 April 2013); doi: 10.1117/12.2011666
Proc. SPIE 8679, Modeling strategies for EUV mask multilayer defect dispositioning and repair, 86790Y (1 April 2013); doi: 10.1117/12.2011444
EUV Resists
Proc. SPIE 8679, Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond, 867910 (1 April 2013); doi: 10.1117/12.2011533
Proc. SPIE 8679, Resist process applications to improve EUV patterning, 867911 (1 April 2013); doi: 10.1117/12.2011566
Proc. SPIE 8679, Development of molecular resist derivatives for EUV lithography, 867912 (1 April 2013); doi: 10.1117/12.2011805
Proc. SPIE 8679, Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography, 867913 (1 April 2013); doi: 10.1117/12.2011240
Proc. SPIE 8679, EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL, 867914 (1 April 2013); doi: 10.1117/12.2011441
High NA and Magnification
Proc. SPIE 8679, Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio, 867915 (1 April 2013); doi: 10.1117/12.2011455
Proc. SPIE 8679, Considerations for high-numerical aperture EUV lithography, 867916 (1 April 2013); doi: 10.1117/12.2015829
Proc. SPIE 8679, Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5, 867917 (1 April 2013); doi: 10.1117/12.2012698
Proc. SPIE 8679, Mask 3D effects and compensation for high NA EUV lithography, 867918 (1 April 2013); doi: 10.1117/12.2011643
Mask II
Proc. SPIE 8679, Experimental phase defect printability evaluation using a programmed phase defect in EUVL mask, 86791B (1 April 2013); doi: 10.1117/12.2011347
Proc. SPIE 8679, Challenges in EUV mask blank deposition for high volume manufacturing, 86791D (1 April 2013); doi: 10.1117/12.2012169
Proc. SPIE 8679, Extending Ru capping layer durability under physical force cleaning, 86791E (1 April 2013); doi: 10.1117/12.2012265
Invited II
Proc. SPIE 8679, ASML's NXE platform performance and volume introduction, 86791F (1 April 2013); doi: 10.1117/12.2010932
Proc. SPIE 8679, Optics for ASML's NXE:3300B platform, 86791H (1 April 2013); doi: 10.1117/12.2012158
Proc. SPIE 8679, Through-focus EUV multilayer defect repair with nanomachining, 86791I (1 April 2013); doi: 10.1117/12.2014935
Proc. SPIE 8679, Patterning challenges of EUV lithography for 1X-nm node DRAM and beyond, 86791J (1 April 2013); doi: 10.1117/12.2011687
Proc. SPIE 8679, Towards manufacturing a 10nm node device with complementary EUV lithography, 86791K (1 April 2013); doi: 10.1117/12.2012136
Poster Session
Proc. SPIE 8679, Limitation of OAI + AttPSM in EUVL , 86791L (1 April 2013); doi: 10.1117/12.2010943
Proc. SPIE 8679, Experimental verification of EUV mask limitations at high numerical apertures, 86791M (1 April 2013); doi: 10.1117/12.2013209
Proc. SPIE 8679, Homogeneity improvement of TiO2-SiO2 glass synthesized by the soot method and its evaluation using the ultrasonic measurement system, 86791N (1 April 2013); doi: 10.1117/12.2011655
Proc. SPIE 8679, Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique, 86791O (1 April 2013); doi: 10.1117/12.2012173
Proc. SPIE 8679, Propagation of surface topography of EUV blank substrate through multilayer and impact of phase defect structure on wafer image, 86791P (1 April 2013); doi: 10.1117/12.2011074
Proc. SPIE 8679, Modeling studies on alternative EUV mask concepts for higher NA, 86791Q (1 April 2013); doi: 10.1117/12.2011432
Proc. SPIE 8679, Low thermal expansion material (LTEM) cleaning and optimization for extreme ultraviolet (EUV) blank deposition, 86791R (1 April 2013); doi: 10.1117/12.2011718
Proc. SPIE 8679, Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection, 86791T (1 April 2013); doi: 10.1117/12.2010615
Proc. SPIE 8679, Registration accuracy improvement of fiducial mark on EUVL mask with MIRAI EUV ABI prototype, 86791U (1 April 2013); doi: 10.1117/12.2011047
Proc. SPIE 8679, Study on EUV mask defect inspection with hp 16nm node using simulated projection electron microscope images, 86791V (1 April 2013); doi: 10.1117/12.2011109
Proc. SPIE 8679, Development of 3D Monte Carlo simulations for predicting multilayer geometry of pit-type EUV defects, 86791W (1 April 2013); doi: 10.1117/12.2011156