Proceedings Volume 8681 is from: Logo
SPIE ADVANCED LITHOGRAPHY
24-28 February 2013
San Jose, California, United States
Front Matter: Volume 8681
Proc. SPIE 8681, Front Matter: Volume 8681, 868101 (18 April 2013); doi: 10.1117/12.2025020
Keynote Session
Proc. SPIE 8681, Metrology in times of shrinking budgets, 868102 (10 April 2013); doi: 10.1117/12.2014974
Metrology for Process Control
Proc. SPIE 8681, Implementation of hybrid metrology at HVM fab for 20nm and beyond, 868103 (10 April 2013); doi: 10.1117/12.2012339
Proc. SPIE 8681, On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections, 868104 (10 April 2013); doi: 10.1117/12.2011878
Proc. SPIE 8681, Toward 7nm target on product overlay for C028 FDSOI technology, 868105 (10 April 2013); doi: 10.1117/12.2011099
Proc. SPIE 8681, Introduction of next-generation 3D AFM for advanced process control, 868106 (18 April 2013); doi: 10.1117/12.2011463
Proc. SPIE 8681, High-volume process monitoring of FEOL 22nm FinFET structures using an automated STEM, 868107 (18 April 2013); doi: 10.1117/12.2011594
Design-based Metrology and Process Control
Proc. SPIE 8681, Material contrast based inline metrology: process verification and control using back scattered electron imaging on CD-SEM, 868108 (10 April 2013); doi: 10.1117/12.2012011
Proc. SPIE 8681, When things go pear shaped: contour variations of contacts, 868109 (10 April 2013); doi: 10.1117/12.2013911
Proc. SPIE 8681, Measurement technology to quantify 2D pattern shape in sub-2x nm advanced lithography, 86810A (10 April 2013); doi: 10.1117/12.2012661
Proc. SPIE 8681, Defect window analysis by using SEM-contour based shape quantifying method for sub-20nm node production, 86810B (10 April 2013); doi: 10.1117/12.2010780
Proc. SPIE 8681, A framework for exploring the interaction between design rules and overlay control, 86810C (18 April 2013); doi: 10.1117/12.2013619
Inspection
Proc. SPIE 8681, In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection, 86810D (10 April 2013); doi: 10.1117/12.2010007
Proc. SPIE 8681, Enhancing 9 nm node dense patterned defect optical inspection using polarization, angle, and focus, 86810E (10 April 2013); doi: 10.1117/12.2012250
Proc. SPIE 8681, Capturing buried defects in metal interconnections with electron beam inspection system, 86810F (18 April 2013); doi: 10.1117/12.2011162
Proc. SPIE 8681, 22 nm node wafer inspection using diffraction phase microscopy and image post-processing, 86810G (10 April 2013); doi: 10.1117/12.2011216
Proc. SPIE 8681, Coherent diffractive imaging microscope with a tabletop high harmonic EUV source, 86810H (18 April 2013); doi: 10.1117/12.2011615
Proc. SPIE 8681, Fin stress and pitch measurement using X-ray diffraction reciprocal space maps and optical scatterometry, 86810I (18 April 2013); doi: 10.1117/12.2023081
Accelerated Development of Materials and Processes: Joint Session with Conference 8681 and 8682
Proc. SPIE 8681, Photoresist shrinkage effects in 16 nm node extreme ultraviolet (EUV) photoresist targets, 86810J (10 April 2013); doi: 10.1117/12.2012470
Proc. SPIE 8681, Precise measurement of photoresist cross-sectional shape change caused by SEM-induced shrinkage, 86810K (18 April 2013); doi: 10.1117/12.2010614
New Horizons
Proc. SPIE 8681, Critical dimension small angle X-ray scattering measurements of FinFET and 3D memory structures, 86810L (10 April 2013); doi: 10.1117/12.2012019
Proc. SPIE 8681, Mueller based scatterometry measurement of nanoscale structures with anisotropic in-plane optical properties, 86810M (18 April 2013); doi: 10.1117/12.2011649
Proc. SPIE 8681, Probing limits of acoustic nanometrology using coherent extreme ultraviolet light, 86810N (10 April 2013); doi: 10.1117/12.2011194
Proc. SPIE 8681, Nanoscale modulus and surface chemistry characterization for collapse free resists, 86810O (18 April 2013); doi: 10.1117/12.2011657
Proc. SPIE 8681, Photoluminescence metrology for LED characterization in high volume manufacturing, 86810P (10 April 2013); doi: 10.1117/12.2013624
Scatterometry
Proc. SPIE 8681, Intercomparison between optical and x-ray scatterometry measurements of FinFET structures, 86810Q (10 April 2013); doi: 10.1117/12.2011144
Proc. SPIE 8681, 28nm FD-SOI metal gate profile optimization, CD and undercut monitoring using scatterometry measurement, 86810R (10 April 2013); doi: 10.1117/12.2010746
Proc. SPIE 8681, Evaluating scatterometry 3D capabilities for EUV, 86810S (10 April 2013); doi: 10.1117/12.2011675
Proc. SPIE 8681, Scatterometry evaluation of focus-dose effects of EUV structures, 86810T (10 April 2013); doi: 10.1117/12.2012120
Proc. SPIE 8681, Direct-scatterometry-enabled optical-proximity-correction-model calibration, 86810U (18 April 2013); doi: 10.1117/12.2009064
Proc. SPIE 8681, Enhancing scatterometry CD signal-to-noise ratio for 1x logic and memory challenges, 86810V (10 April 2013); doi: 10.1117/12.2021386
Poster Session
Proc. SPIE 8681, The correlation between ArF resist dispense volume and surface tension, 86810X (10 April 2013); doi: 10.1117/12.2008841
Proc. SPIE 8681, Enhanced photomask quality control by 2D structures monitoring using auto image-to-layout method on advanced 28nm technology node or beyond, 86810Y (10 April 2013); doi: 10.1117/12.2009030
Proc. SPIE 8681, High order wafer alignment for 20nm node logic process, 868110 (18 April 2013); doi: 10.1117/12.2010709
Proc. SPIE 8681, In-die overlay metrology method using defect review SEM images, 868111 (10 April 2013); doi: 10.1117/12.2010728
Proc. SPIE 8681, Control of inspection for EUV substrates and mask blanks, 868112 (18 April 2013); doi: 10.1117/12.2010819
Proc. SPIE 8681, Joint calibration of 3D resist image and CDSEM, 868113 (10 April 2013); doi: 10.1117/12.2010846
Proc. SPIE 8681, Line edge roughness measurement technique for fingerprint pattern in block copolymer thin film, 868114 (10 April 2013); doi: 10.1117/12.2010915
Proc. SPIE 8681, Increased particle inspection sensitivity by reduction of background scatter variance, 868116 (10 April 2013); doi: 10.1117/12.2011092
Proc. SPIE 8681, Overlay improvement through lot-based feed-forward: applications to various 28nm node lithography operations, 868117 (10 April 2013); doi: 10.1117/12.2011117
Proc. SPIE 8681, Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations, 868118 (10 April 2013); doi: 10.1117/12.2011122
Proc. SPIE 8681, Fast simulation method for parameter reconstruction in optical metrology, 868119 (10 April 2013); doi: 10.1117/12.2011154
Proc. SPIE 8681, DSA hole defectivity analysis using advanced optical inspection tool, 86811A (18 April 2013); doi: 10.1117/12.2011177
Proc. SPIE 8681, Scatterometry simulator development with GPU, real-coded GA and RCWA, 86811B (10 April 2013); doi: 10.1117/12.2011289
Proc. SPIE 8681, In-line high-K/metal gate monitoring using picosecond ultrasonics, 86811C (18 April 2013); doi: 10.1117/12.2011348
Proc. SPIE 8681, Advanced overlay stability control with correction per exposure on immersion scanners, 86811D (10 April 2013); doi: 10.1117/12.2011379
Proc. SPIE 8681, Optical analysis on the wafer defect inspection for yield enhancement, 86811E (10 April 2013); doi: 10.1117/12.2011387
Proc. SPIE 8681, Performance of ASML YieldStar µDBO overlay targets for advanced lithography nodes C028 and C014 overlay process control, 86811F (18 April 2013); doi: 10.1117/12.2011406
Proc. SPIE 8681, Overlay accuracy calibration, 86811G (18 April 2013); doi: 10.1117/12.2011416
Proc. SPIE 8681, A novel focus monitoring technique using Iso-Dense overlay mark, 86811H (18 April 2013); doi: 10.1117/12.2011422
Proc. SPIE 8681, Manufacturing and advanced characterization of sub-25nm diameter CD-AFM probes with sub-10nm tip edges radius, 86811I (10 April 2013); doi: 10.1117/12.2011451
Proc. SPIE 8681, Quality metric for accurate overlay control in <20nm nodes, 86811J (18 April 2013); doi: 10.1117/12.2011454
Proc. SPIE 8681, SEM-contour shape analysis method for advanced semiconductor devices, 86811K (10 April 2013); doi: 10.1117/12.2011459
Proc. SPIE 8681, Sensitivity improvement by a hybrid scatterometer, 86811M (10 April 2013); doi: 10.1117/12.2011472
Proc. SPIE 8681, Study of overlay in EUV/ArF mix and match lithography, 86811O (18 April 2013); doi: 10.1117/12.2011510
Proc. SPIE 8681, Lithography focus/exposure control and corrections to improve CDU, 86811P (10 April 2013); doi: 10.1117/12.2011534