Front Matter: Volume 8682
Proc. SPIE 8682, Front Matter: Volume 8682, 868201 (19 April 2013); doi: 10.1117/12.2028913
Keynote Session
Proc. SPIE 8682, The evolving complexity of patterning materials, 868202 (10 April 2013); doi: 10.1117/12.2014526
Proc. SPIE 8682, Optimization of a virtual EUV photoresist for the trade-off between throughput and CDU, 868203 (29 March 2013); doi: 10.1117/12.2011701
Novel Processing of Patterning Materials
Proc. SPIE 8682, Sustainable scaling technique on double-patterning process, 868204 (29 March 2013); doi: 10.1117/12.2011359
Proc. SPIE 8682, Dry development rinse process (DDRP) and material (DDRM) for novel pattern collapse free process, 868205 (29 March 2013); doi: 10.1117/12.2011511
Proc. SPIE 8682, Post-litho line edge/width roughness smoothing by ion implantations, 868206 (29 March 2013); doi: 10.1117/12.2013435
Proc. SPIE 8682, Precuring implant photoresists for shrink and patterning control, 868207 (29 March 2013); doi: 10.1117/12.2011423
Proc. SPIE 8682, Application specific ratings for lithography process filters, 868208 (29 March 2013); doi: 10.1117/12.2010735
EUV Resists: Joint Session with Conferences 8679 and 8682
Proc. SPIE 8682, The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL, 868209 (29 March 2013); doi: 10.1117/12.2011489
Proc. SPIE 8682, Rectification of EUV-patterned contact holes using directed self-assembly, 86820A (29 March 2013); doi: 10.1117/12.2012667
Proc. SPIE 8682, Novel EUV resist materials and process for 20nm half pitch and beyond, 86820B (29 March 2013); doi: 10.1117/12.2011243
Optical Extensions
Proc. SPIE 8682, Process variability of self-aligned multiple patterning, 86820C (29 March 2013); doi: 10.1117/12.2011385
Proc. SPIE 8682, 20nm VIA BEOL patterning challenges, 86820D (29 March 2013); doi: 10.1117/12.2011843
Proc. SPIE 8682, Feasibility study of resist slimming for SIT, 86820E (29 March 2013); doi: 10.1117/12.2011506
Proc. SPIE 8682, Combining physical resist modeling and self-consistent field theory for pattern simulation in directed self-assembly, 86820G (29 March 2013); doi: 10.1117/12.2011639
Proc. SPIE 8682, Bottom-up/top-down high resolution, high throughput lithography using vertically assembled block bottle brush polymers, 86820H (29 March 2013); doi: 10.1117/12.2014528
Accelerated Development of Materials and Processes: Joint Session with Conference 8681 and 8682
Proc. SPIE 8682, In situ dissolution analysis of half-pitch line and space patterns at various resist platforms using high speed atomic force microscopy, 86820I (29 March 2013); doi: 10.1117/12.2011373
DSA Materials and Processing: Joint Session with Conference 8680 and 8682
Proc. SPIE 8682, Advances in directed self assembly integration and manufacturability at 300 mm, 86820K (29 March 2013); doi: 10.1117/12.2012018
Proc. SPIE 8682, Progress in directed self-assembly hole shrink applications, 86820L (29 March 2013); doi: 10.1117/12.2012353
Negative Tone Patterning
Proc. SPIE 8682, Process development of the EUVL negative-tone imaging at EIDEC, 86820M (29 March 2013); doi: 10.1117/12.2011356
Proc. SPIE 8682, Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives, 86820N (29 March 2013); doi: 10.1117/12.2011640
Proc. SPIE 8682, Investigation of trench and contact hole shrink mechanism in the negative tone develop process, 86820O (29 March 2013); doi: 10.1117/12.2012331
Proc. SPIE 8682, Negative tone imaging (NTI) with KrF: extension of 248nm IIP lithography to under sub-20nm logic device, 86820P (29 March 2013); doi: 10.1117/12.2011426
Proc. SPIE 8682, EUV lithography performance of negative-tone chemically amplified fullerene resist, 86820Q (29 March 2013); doi: 10.1117/12.2011464
Proc. SPIE 8682, Non-aqueous negative-tone development of inorganic metal oxide nanoparticle photoresists for next generation lithography, 86820R (29 March 2013); doi: 10.1117/12.2011282
Novel Patterning Materials
Proc. SPIE 8682, New spin-on metal hardmask materials for lithography processes, 86820S (29 March 2013); doi: 10.1117/12.2011226
Proc. SPIE 8682, Development of KrF hybrid resist for a dual-isolation application, 86820T (16 April 2013); doi: 10.1117/12.2011515
Proc. SPIE 8682, Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition, 86820U (29 March 2013); doi: 10.1117/12.2011572
Proc. SPIE 8682, Novel patternable and conducting metal-polymer nanocomposites: a step towards advanced mutlifunctional materials, 86820W (29 March 2013); doi: 10.1117/12.2011716
Proc. SPIE 8682, Metal-polymer nanocomposite resist: a step towards in-situ nanopatterns metallization, 86820X (29 March 2013); doi: 10.1117/12.2011555
E-Beam Patterning Materials
Proc. SPIE 8682, Advanced electron beam resist requirements and challenges, 86820Y (29 March 2013); doi: 10.1117/12.2014527
Proc. SPIE 8682, Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography, 86820Z (29 March 2013); doi: 10.1117/12.2011461
Proc. SPIE 8682, Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split, 868211 (29 March 2013); doi: 10.1117/12.2010364
Proc. SPIE 8682, The evaluation of photo/e-beam complementary grayscale lithography for high topography 3D structure, 868212 (29 March 2013); doi: 10.1117/12.2011681
EUV Materials, Processing, and Analysis
Proc. SPIE 8682, Progress in resolution, sensitivity, and critical dimensional uniformity of EUV chemically amplified resists, 868213 (29 March 2013); doi: 10.1117/12.2011565
Proc. SPIE 8682, Negative tone imaging process and materials for EUV lighography, 868214 (29 March 2013); doi: 10.1117/12.2011384
Proc. SPIE 8682, Underlayer and rinse materials for improving EUV resist performance, 868215 (29 March 2013); doi: 10.1117/12.2013363
Proc. SPIE 8682, High absorbing resists based on trifluoromethacrylate-vinyl ether copolymers for EUV lithography, 868216 (29 March 2013); doi: 10.1117/12.2014385
Fundamental Studies of RLS Behavior
Proc. SPIE 8682, LWR study on resist formulation parameters, 868217 (29 March 2013); doi: 10.1117/12.2011386
Proc. SPIE 8682, Monitoring the evolution of line edge roughness during resist development using an analog of quenched flow kinetics, 868218 (29 March 2013); doi: 10.1117/12.2010966
Proc. SPIE 8682, Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, x-ray, electron and ion induced reactions, 86821A (29 March 2013); doi: 10.1117/12.2011433
Proc. SPIE 8682, Study on dissolution behavior of polymer-bound and polymer-blended photo-acid generator (PAG) resists, 86821B (29 March 2013); doi: 10.1117/12.2011636
Poster Session: Spacer Development
Proc. SPIE 8682, Pattern wiggling investigation of self-aligned double patterning for 2x nm node NAND Flash and beyond, 86821C (29 March 2013); doi: 10.1117/12.2010761
Proc. SPIE 8682, Extendibility of self-aligned type multiple patterning for further scaling, 86821D (29 March 2013); doi: 10.1117/12.2011953
Proc. SPIE 8682, Process requirement of self-aligned multiple patterning, 86821F (29 March 2013); doi: 10.1117/12.2011398
Poster Session: Fundamentals
Proc. SPIE 8682, Capability study and challenges to sub-2x nm node contact hole patterning, 86821G (29 March 2013); doi: 10.1117/12.2011434
Proc. SPIE 8682, Photoresist film analysis to investigate LWR generation mechanism, 86821H (29 March 2013); doi: 10.1117/12.2011394
Proc. SPIE 8682, Theoretical study of deprotonation of polymer radical cation for EUV resist, 86821I (29 March 2013); doi: 10.1117/12.2010607
Proc. SPIE 8682, Analysis of acid-generating action of PAG in an EUV resist using acid-sensitive dyes, 86821J (29 March 2013); doi: 10.1117/12.2012106
Proc. SPIE 8682, Calculating development parameters for chemically amplified resists by the film-reducing method, 86821K (29 March 2013); doi: 10.1117/12.2008791
Proc. SPIE 8682, Study of swelling behavior in ArF resist during development by the QCM method (3): observations of swelling layer elastic modulus, 86821L (29 March 2013); doi: 10.1117/12.2006027
Proc. SPIE 8682, Light scattering by organic crosslinking material using nanomorphology of polymer blends, 86821M (29 March 2013); doi: 10.1117/12.2010646
Proc. SPIE 8682, Line edge roughness of high deprotection activation energy photoresist by using sub-millisecond post exposure bake, 86821N (29 March 2013); doi: 10.1117/12.2011667
Proc. SPIE 8682, PEB to development delay influence on contact patterning by negative tone development process, 86821P (29 March 2013); doi: 10.1117/12.2010755
Poster Session: Novel Materials
Proc. SPIE 8682, Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes, 86821R (29 March 2013); doi: 10.1117/12.2011096
Proc. SPIE 8682, EUV lithography using water-developable resist material derived from biomass, 86821T (29 March 2013); doi: 10.1117/12.2010643