PROCEEDINGS VOLUME 8683
SPIE ADVANCED LITHOGRAPHY | 24-28 FEBRUARY 2013
Optical Microlithography XXVI
Proceedings Volume 8683 is from: Logo
SPIE ADVANCED LITHOGRAPHY
24-28 February 2013
San Jose, California, United States
Front Matter: Volume 8683
Proc. SPIE 8683, Front Matter: Volume 8683, 868301 (23 April 2013); doi: 10.1117/12.2028885
14nm and Beyond
Proc. SPIE 8683, Computational aspects of optical lithography extension by directed self-assembly, 868304 (12 April 2013); doi: 10.1117/12.2012440
Proc. SPIE 8683, Sub-12nm optical lithography with 4x pitch division and SMO-lite, 868305 (12 April 2013); doi: 10.1117/12.2011329
Proc. SPIE 8683, Impact of process decisions and alignment strategy on overlay for the 14nm node, 868306 (12 April 2013); doi: 10.1117/12.2011968
Proc. SPIE 8683, The impact of 14-nm photomask uncertainties on computational lithography solutions, 868307 (12 April 2013); doi: 10.1117/12.2013748
Proc. SPIE 8683, An investigation into scalability and compliance for triple patterning with stitches for metal 1 at the 14nm node, 868308 (12 April 2013); doi: 10.1117/12.2011548
Source and Mask Optimization (SMO) I
Proc. SPIE 8683, Robust SMO methodology for exposure tool and mask variations in high volume production, 868309 (12 April 2013); doi: 10.1117/12.2011623
Proc. SPIE 8683, Imaging application tools for extremely low-k1 ArF immersion lithography, 86830A (12 April 2013); doi: 10.1117/12.2011382
Proc. SPIE 8683, Study of recent CFD-based scheme for analyzing 3D mask effects, 86830B (12 April 2013); doi: 10.1117/12.2009116
Proc. SPIE 8683, The effect of mask and source complexity on source mask optimization, 86830C (12 April 2013); doi: 10.1117/12.2011993
Proc. SPIE 8683, Illumination pupilgram control using an intelligent illuminator, 86830D (12 April 2013); doi: 10.1117/12.2011077
RET
Proc. SPIE 8683, Inverse lithography technique for advanced CMOS nodes, 86830E (12 April 2013); doi: 10.1117/12.2010111
Proc. SPIE 8683, Mask compensation for process flare in 193nm very low k1 lithography, 86830F (12 April 2013); doi: 10.1117/12.2012463
Proc. SPIE 8683, Pupil wavefront manipulation to compensate for mask topography effects in optical nanolithography, 86830G (12 April 2013); doi: 10.1117/12.2010034
Proc. SPIE 8683, Effective model-based SRAF placement for full chip 2D layouts, 86830H (12 April 2013); doi: 10.1117/12.2011611
Proc. SPIE 8683, Wafer topography modeling for ionic implantation mask correction dedicated to 2x nm FDSOI technologies, 86830I (12 April 2013); doi: 10.1117/12.2011412
Source and Mask Optimization (SMO) II
Proc. SPIE 8683, Enabling reverse tone imaging for via levels using attenuated phase shift mask and source optimization, 86830J (12 April 2013); doi: 10.1117/12.2011349
Proc. SPIE 8683, Introducing a novel flow to estimate challenges encountered while transitioning from RET development to manufacturable solution, 86830K (12 April 2013); doi: 10.1117/12.2013605
Proc. SPIE 8683, Manufacturability of computation lithography mask: current limit and requirements for sub-20nm node, 86830L (12 April 2013); doi: 10.1117/12.2011341
Proc. SPIE 8683, The impact of realistic source shape and flexibility on source mask optimization, 86830M (12 April 2013); doi: 10.1117/12.2011353
Proc. SPIE 8683, Source and mask optimization to mitigate hotspots in etch process, 86830N (12 April 2013); doi: 10.1117/12.2011648
Proc. SPIE 8683, Global source optimization for MEEF and OPE, 86830O (12 April 2013); doi: 10.1117/12.2008267
Process Technology I
Proc. SPIE 8683, Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing., 86830P (12 April 2013); doi: 10.1117/12.2011507
Proc. SPIE 8683, Mix-and-match overlay performance of the NSR-S622D immersion scanner, 86830Q (12 April 2013); doi: 10.1117/12.2010875
Proc. SPIE 8683, Lithographic challenges and their solutions for critical layers in sub-14nm node logic devices, 86830R (12 April 2013); doi: 10.1117/12.2025863
Proc. SPIE 8683, Lithography imaging control by enhanced monitoring of light source performance, 86830S (12 April 2013); doi: 10.1117/12.2013213
Modeling
Proc. SPIE 8683, Solutions with precise prediction for thermal aberration error in low-k1 immersion lithography, 86830U (12 April 2013); doi: 10.1117/12.2011691
Proc. SPIE 8683, Compact OPC model optimization using emulated data, 86830V (12 April 2013); doi: 10.1117/12.2010910
Proc. SPIE 8683, A study on the automation of scanner matching, 86830W (12 April 2013); doi: 10.1117/12.2014402
Proc. SPIE 8683, Adjustment of image decomposition mode and reflection criterion focusing on critical dimension uniformity and exposure dose effectiveness under diffraction effects in optical microlithography using a digital micromirror device, 86830X (12 April 2013); doi: 10.1117/12.2011428
Proc. SPIE 8683, Simulation of spacer-based SADP (Self-Aligned Double-Patterning) for 15nm half pitch, 86830Y (12 April 2013); doi: 10.1117/12.2013877
Process Technology II
Proc. SPIE 8683, A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling, 86830Z (12 April 2013); doi: 10.1117/12.2010582
Proc. SPIE 8683, Grayscale lithography: 3D structuring and thickness control, 868310 (12 April 2013); doi: 10.1117/12.2008847
Proc. SPIE 8683, Sidewall profile inclination modulation mask (SPIMM): modification of an attenuated phase-shift mask for single-exposure double and multiple patterning, 868311 (12 April 2013); doi: 10.1117/12.2008886
Proc. SPIE 8683, Avoiding wafer-print artifacts in spacer is dielectric (SID) patterning, 868312 (12 April 2013); doi: 10.1117/12.2011539
Proc. SPIE 8683, Best focus shift mitigation for extending the depth of focus, 868313 (12 April 2013); doi: 10.1117/12.2011114
Proc. SPIE 8683, Wafer sub-layer impact in OPC/ORC models for 2x nm node implant layers, 868314 (12 April 2013); doi: 10.1117/12.2011424
Optical and DFM I: Joint Session with Conferences 8683 and 8684
Proc. SPIE 8683, Interference harmonics and rigorous EM spectrum analysis method for low-k1 CD Bossung tilt correction, 868315 (12 April 2013); doi: 10.1117/12.2010599
Proc. SPIE 8683, Model-based stitching and inter-mask bridge prevention for double patterning lithography, 868316 (12 April 2013); doi: 10.1117/12.2011494
Proc. SPIE 8683, Application of artificial neural networks to compact mask models in optical lithography simulation, 868317 (12 April 2013); doi: 10.1117/12.2011132
Optical and DFM II: Joint Session with Conferences 8683 and 8684
Proc. SPIE 8683, 3D resist profile modeling for OPC applications, 868318 (12 April 2013); doi: 10.1117/12.2011852
Proc. SPIE 8683, On the accuracy of different Fourier transforms of VLSI designs, 868319 (12 April 2013); doi: 10.1117/12.2011481
Simulation
Proc. SPIE 8683, Benchmarking study of 3D mask modeling for 2X and 1X nodes, 86831A (12 April 2013); doi: 10.1117/12.2011485
Proc. SPIE 8683, OPC resist model separability validation after SMO source change, 86831B (12 April 2013); doi: 10.1117/12.2011879
Proc. SPIE 8683, Topographic mask modeling with reduced basis finite element method, 86831C (12 April 2013); doi: 10.1117/12.2011613
Proc. SPIE 8683, Accurate 3DEMF mask model for full-chip simulation, 86831D (12 April 2013); doi: 10.1117/12.2013167
Proc. SPIE 8683, Role of 3D photo-resist simulation for advanced technology nodes, 86831E (12 April 2013); doi: 10.1117/12.2011427
Tooling
Proc. SPIE 8683, A study of vertical lithography for high-density 3D structures, 86831F (12 April 2013); doi: 10.1117/12.2011340
Proc. SPIE 8683, Power up: 120 Watt injection-locked ArF excimer laser required for both multi-patterning and 450 mm wafer lithography, 86831G (12 April 2013); doi: 10.1117/12.2011404
Proc. SPIE 8683, High power 120W ArF immersion XLR laser system for high dose applications, 86831H (12 April 2013); doi: 10.1117/12.2012681
Proc. SPIE 8683, Comprehensive thermal aberration and distortion control of lithographic lenses for accurate overlay, 86831I (12 April 2013); doi: 10.1117/12.2010908
Proc. SPIE 8683, High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements, 86831J (12 April 2013); doi: 10.1117/12.2011550
Proc. SPIE 8683, High-productivity immersion scanner enabling 1xnm hp manufacturing, 86831K (12 April 2013); doi: 10.1117/12.2011123
Proc. SPIE 8683, Extending immersion lithography down to 1x nm production nodes, 86831L (12 April 2013); doi: 10.1117/12.2021397
Poster Section
Proc. SPIE 8683, Compatibility of optimized source over design changes in the foundry environment, 86831M (12 April 2013); doi: 10.1117/12.2013704
Proc. SPIE 8683, 3D resist profile full chip verification and hot spot disposition, 86831N (12 April 2013); doi: 10.1117/12.2010595