PROCEEDINGS VOLUME 8767
SPIE MICROTECHNOLOGIES | 24-26 APRIL 2013
Integrated Photonics: Materials, Devices, and Applications II
Proceedings Volume 8767 is from: Logo
SPIE MICROTECHNOLOGIES
24-26 April 2013
Grenoble, France
Front Matter: Volume 8767
Proc. SPIE 8767, Front Matter: Volume 8767, 876701 (29 May 2013); doi: 10.1117/12.2031895
Micro Cavities and Micro Resonators
Proc. SPIE 8767, Systematic optimization of the storage capacity of slow light photonic crystal waveguides, 876702 (22 May 2013); doi: 10.1117/12.2016896
Proc. SPIE 8767, Fano lineshapes of 'Peak-tracking chip' spatial profiles analyzed with correlation analysis for bioarray imaging and refractive index sensing, 876703 (22 May 2013); doi: 10.1117/12.2018316
Proc. SPIE 8767, Monolithic integration of high-Q wedge resonators with vertically coupled waveguides, 876704 (22 May 2013); doi: 10.1117/12.2017400
Proc. SPIE 8767, Talbot effect from periodic and quasi-periodic structures: application to 3D quasi-crystalline photonic lattices formation, 876705 (22 May 2013); doi: 10.1117/12.2016914
Photonic Materials
Proc. SPIE 8767, Hydrogenated amorphous silicon nanowires with high nonlinear figure of merit and stable nonlinear optical response, 876706 (22 May 2013); doi: 10.1117/12.2017296
Proc. SPIE 8767, Travelling wave resonators fabricated with low-loss hydrogenated amorphous silicon, 876707 (22 May 2013); doi: 10.1117/12.2018509
Proc. SPIE 8767, High-resolution 3D structural and optical analyses of hybrid or composite materials by means of scanning probe microscopy combined with the ultramicrotome technique: an example of application to engineering of liquid crystals doped with fluorescent quantum dots, 876708 (22 May 2013); doi: 10.1117/12.2017088
Ge-Based Devices
Proc. SPIE 8767, Ge on Si waveguide-integrated photodiodes for high speed and low power receivers, 87670A (22 May 2013); doi: 10.1117/12.2016865
Proc. SPIE 8767, Phase-shift in waveguide integrated Ge quantum wells, 87670B (22 May 2013); doi: 10.1117/12.2017249
Proc. SPIE 8767, Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures, 87670C (22 May 2013); doi: 10.1117/12.2017168
Proc. SPIE 8767, Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors, 87670D (22 May 2013); doi: 10.1117/12.2017008
Photonics Platform I
Proc. SPIE 8767, TriPleX waveguide platform: low-loss technology over a wide wavelength range, 87670E (22 May 2013); doi: 10.1117/12.2020574
Proc. SPIE 8767, Generic process for low-cost InP integrated photonics in industrial foundries, 87670F (22 May 2013); doi: 10.1117/12.2020575
Photonics Platform II
Proc. SPIE 8767, A CMOS-compatible silicon photonic platform for high-speed integrated opto-electronics, 87670G (22 May 2013); doi: 10.1117/12.2017053
Proc. SPIE 8767, ePIXfab: the silicon photonics platform, 87670H (22 May 2013); doi: 10.1117/12.2020576
Materials and Devices for Light Emission
Proc. SPIE 8767, Electrically pumped Er-doped light emitting slot waveguides for on-chip optical routing at 1.54 µm, 87670I (22 May 2013); doi: 10.1117/12.2017250
Proc. SPIE 8767, Light emission at telecom wavelengths from single-walled carbon nanotubes, 87670J (22 May 2013); doi: 10.1117/12.2017227
Proc. SPIE 8767, Warm white LED light by frequency down-conversion of mixed yellow and red Lumogen, 87670L (22 May 2013); doi: 10.1117/12.2017274
Si and InP Based Devices
Proc. SPIE 8767, Semi-insulating substrate based generic InP photonic integration platform, 87670M (22 May 2013); doi: 10.1117/12.2017431
Proc. SPIE 8767, Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors, 87670N (29 May 2013); doi: 10.1117/12.2017327
Proc. SPIE 8767, Characterization of spectral optical responsivity of Si-photodiode junction combinations available in a 0.35µm HV-CMOS technology, 87670P (22 May 2013); doi: 10.1117/12.2017540
Nanostructures and Nanophotonics
Proc. SPIE 8767, A dense spot size converter array fabricated in a generic process on InP, 87670Q (22 May 2013); doi: 10.1117/12.2017307
Proc. SPIE 8767, SWG dispersion engineering for ultra-broadband photonic devices, 87670R (22 May 2013); doi: 10.1117/12.2017229
Proc. SPIE 8767, Theoretical model of an interleave-chirped arrayed waveguide grating (IC-AWG), 87670S (22 May 2013); doi: 10.1117/12.2017026
Proc. SPIE 8767, Metamaterial-based sensor for skin disease diagnostics, 87670T (22 May 2013); doi: 10.1117/12.2017561
Organic and Hybrid Devices
Proc. SPIE 8767, Low-loss silicon nitrite waveguides in polymer, 87670U (22 May 2013); doi: 10.1117/12.2017485
Proc. SPIE 8767, Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths, 87670V (22 May 2013); doi: 10.1117/12.2016763
Proc. SPIE 8767, Experimental studies of cobalt ferrite nanoparticles doped silica matrix 3D magneto-photonic crystals, 87670W (22 May 2013); doi: 10.1117/12.2016676
Proc. SPIE 8767, Direct imprinting on chalcogenide glass and fabrication of infrared wire-grid polarizer, 87670X (22 May 2013); doi: 10.1117/12.2016652
Poster Session
Proc. SPIE 8767, Si-based light emitter in an integrated photonic circuit for smart biosensor applications, 876710 (22 May 2013); doi: 10.1117/12.2017275
Proc. SPIE 8767, Liquid-crystal tunable plasmonic stripe directional coupler switches, 876712 (22 May 2013); doi: 10.1117/12.2016954
Proc. SPIE 8767, Analysis of the Drever-Pound-Hall technique for the simultaneous detection of the detuning of more cavities on a single channel, 876713 (22 May 2013); doi: 10.1117/12.2017242
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