Nanoepitaxy: Materials and Devices V
Proceedings Volume 8820 is from: Logo
25-29 August 2013
San Diego, California, United States
Front Matter: Volume 8820
Proc. SPIE 8820, Front Matter: Volume 8820, 882001 (25 September 2013);
Low-Dimensional Materials and Devices I
Proc. SPIE 8820, Fabrication of ambipolar gate-all-around field-effect transistors using silicon nanobridge arrays, 882002 (19 September 2013);
Proc. SPIE 8820, Electronic effects of defects in one-dimensional channels, 882004 (19 September 2013);
1D Optoelectronic Devices
Proc. SPIE 8820, Nanowires for next generation photovoltaics, 88200A (19 September 2013);
1D Materials I
Proc. SPIE 8820, Vapor-liquid-solid growth of <110> silicon nanowire arrays, 88200I (19 September 2013);
1D Materials II
Proc. SPIE 8820, Aluminum oxide coating for post-growth photo emission wavelength tuning of indium phosphide nanowire networks, 88200L (19 September 2013);
Proc. SPIE 8820, Orientation, alignment, and polytype control in epitaxial growth of SiC nanowires for electronics application in harsh environments , 88200M (19 September 2013);
Low-Dimensional Materials and Devices II
Proc. SPIE 8820, Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks, 88200Q (19 September 2013);
Nanoscale Hybrid Inorganic/Organic Materials and Devices
Proc. SPIE 8820, Ultrasensitive biomolecular assays with amplifying nanowire FET biosensors, 88200S (19 September 2013);
Proc. SPIE 8820, Using tobacco mosaic virus template for the fabrication of three-dimensional hierarchical microbattery electrodes with high energy and high power density, 88200T (19 September 2013);
Low-Dimensional Growth and Deposition
Proc. SPIE 8820, Difference in formation of ferromagnetic MnAs nanoclusters on III-V semiconducting nanowire templates, 88200V (19 September 2013);
Atomically Controlled Growth and Deposition
Proc. SPIE 8820, Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition, 88200Y (19 September 2013);
Proc. SPIE 8820, Wide band antireflection coatings deposited by atomic layer deposition, 88200Z (25 September 2013);
1D Materials III
Proc. SPIE 8820, Study of Raman signal from indium phosphide nanowire networks coated with gold, 882012 (19 September 2013);
Proc. SPIE 8820, Single-polycrystalline core-shell silicon nanowires grown on copper, 882013 (19 September 2013);
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