Front Matter: Volume 8880
Proc. SPIE 8880, Front Matter: Volume 8880, 888001 (9 October 2013); doi: 10.1117/12.2035650
Keynote Session
Proc. SPIE 8880, Delivering complexity at the frontier of electronics, 888002 (22 October 2013); doi: 10.1117/12.2032077
Materials and Process I
Proc. SPIE 8880, Line width roughness and its control on photomask, 888004 (9 September 2013); doi: 10.1117/12.2030487
Proc. SPIE 8880, Ultra-low roughness magneto-rheological finishing for EUV mask substrates, 888005 (23 September 2013); doi: 10.1117/12.2026372
Simulation, OPC, and Mask Data Preparation I
Proc. SPIE 8880, Entering mask process correction era for EUV mask manufacturing, 888008 (9 September 2013); doi: 10.1117/12.2023093
Proc. SPIE 8880, Automated Defect Classification (ADC) and Progression Monitoring (DPM) in wafer fab reticle requalification, 88800A (20 September 2013); doi: 10.1117/12.2031786
Mask Inspection I
Proc. SPIE 8880, Performance of an automatic algorithm for quantifying critical dimensions in actinic aerial images, 88800B (9 September 2013); doi: 10.1117/12.2027913
Proc. SPIE 8880, Improve mask inspection capacity with Automatic Defect Classification (ADC), 88800C (1 October 2013); doi: 10.1117/12.2030844
Proc. SPIE 8880, Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation, 88800D (1 October 2013); doi: 10.1117/12.2028275
Proc. SPIE 8880, Your worst nightmare: inspection of aggressive OPC on 14nm masks with emphasis on defect sensitivity and wafer defect print predictability, 88800E (23 September 2013); doi: 10.1117/12.2027307
Simulation, OPC, and Mask Data Preparation II
Proc. SPIE 8880, The impact of 14nm photomask variability and uncertainty on computational lithography solutions, 88800F (10 September 2013); doi: 10.1117/12.2030733
Proc. SPIE 8880, An accurate ILT-enabling full-chip mask 3D model for all-angle patterns, 88800G (9 September 2013); doi: 10.1117/12.2026468
Proc. SPIE 8880, Simulation study of CD variation caused by field edge effects and out-of-band radiation in EUVL, 88800H (1 October 2013); doi: 10.1117/12.2027880
Patterning and Double-Patterning Technology
Proc. SPIE 8880, Color balancing for triple patterning lithography with complex designs, 88800I (10 September 2013); doi: 10.1117/12.2026285
Proc. SPIE 8880, 450mm wafer patterning with jet and flash imprint lithography, 88800J (9 September 2013); doi: 10.1117/12.2029275
Mask Industry Survey
Proc. SPIE 8880, 2013 mask industry survey, 88800K (20 September 2013); doi: 10.1117/12.2033255
Mask Contamination, Cleaning, and Long-Term Durability I
Proc. SPIE 8880, Computational mask defect review for contamination and haze inspections, 88800L (9 September 2013); doi: 10.1117/12.2027648
Proc. SPIE 8880, Evaluation of dry technology for removal of pellicle adhesive residue on advanced optical reticles, 88800M (23 September 2013); doi: 10.1117/12.2030686
Proc. SPIE 8880, Inline detection of Chrome degradation on binary 193nm photomasks, 88800N (9 September 2013); doi: 10.1117/12.2029470
Mask Metrology I
Proc. SPIE 8880, Comparison of CD measurements of an EUV photomask by EUV scatterometry and CD-AFM, 88800O (9 September 2013); doi: 10.1117/12.2025827
Proc. SPIE 8880, Two-dimensional mask effects at the 14 nm logic node, 88800P (1 October 2013); doi: 10.1117/12.2028909
Proc. SPIE 8880, Measurement of EUV absorber and resist CD using spectroscopic ellipsometer, 88800Q (9 September 2013); doi: 10.1117/12.2027231
Mask Inspection II
Proc. SPIE 8880, Reflecting on inspectability and wafer printability of multiple EUV mask absorbers, 88800S (20 September 2013); doi: 10.1117/12.2027054
Proc. SPIE 8880, EUV patterned mask inspection system using a projection electron microscope technique, 88800U (9 September 2013); doi: 10.1117/12.2027566
Mask Materials and Process II
Proc. SPIE 8880, Defects on high-resolution negative-tone resist: "The revenge of the blobs", 88800V (9 September 2013); doi: 10.1117/12.2028753
Proc. SPIE 8880, Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography, 88800W (9 September 2013); doi: 10.1117/12.2026853
Proc. SPIE 8880, Model-based etch profile simulation of PSM films, 88800X (1 October 2013); doi: 10.1117/12.2029006
Proc. SPIE 8880, Implementable and systematic mitigation of native defects in EUV masks, 88800Y (9 September 2013); doi: 10.1117/12.2025786
Mask Contamination, Cleaning, and Long-Term Durability II
Proc. SPIE 8880, Studying the effects of modified surface chemistry on chrome migration in binary photomasks, 88800Z (9 September 2013); doi: 10.1117/12.2025172
Proc. SPIE 8880, Investigation of EUVL reticle capping layer peeling under wet cleaning, 888010 (3 October 2013); doi: 10.1117/12.2031430
Direct-Write
Proc. SPIE 8880, 1D design style implications for mask making and CEBL, 888012 (9 September 2013); doi: 10.1117/12.2030684
Proc. SPIE 8880, Charting CEBL's role in mainstream semiconductor lithography, 888013 (9 September 2013); doi: 10.1117/12.2030838
Proc. SPIE 8880, Impact of proximity model inaccuracy on patterning in electron beam lithography, 888014 (9 September 2013); doi: 10.1117/12.2029180
2013 JPM Panel Overview
Proc. SPIE 8880, 2013 Photomask Japan panel discussion summary: Future mask patterning technologies in the next decade: searching for the best mix solution, 888015 (9 September 2013); doi: 10.1117/12.2032072
Mask Manufacturing, and Yield and Mask Business
Proc. SPIE 8880, Mask automation: need a revolution in mask makers and equipment industry, 888016 (9 September 2013); doi: 10.1117/12.2025569
Proc. SPIE 8880, DSA template mask determination and cut redistribution for advanced 1D gridded design, 888017 (9 September 2013); doi: 10.1117/12.2025688
Proc. SPIE 8880, Finishing of EUV photomask substrates by CNC precessed bonnet polisher, 888018 (9 September 2013); doi: 10.1117/12.2026198
Proc. SPIE 8880, Simulation and correction of resist charging due to fogging in electron-beam lithography, 888019 (1 October 2013); doi: 10.1117/12.2032177
Mask Metrology II
Proc. SPIE 8880, A novel design-based global CDU metrology for 1X nm node logic devices, 88801A (1 October 2013); doi: 10.1117/12.2025694
Proc. SPIE 8880, EUV scatterometry-based measurement method for the determination of phase roughness, 88801B (23 September 2013); doi: 10.1117/12.2027695
Proc. SPIE 8880, SEM image quality enhancement technology for bright field mask, 88801C (9 September 2013); doi: 10.1117/12.2029786
Proc. SPIE 8880, Direct phase-shift measurement of an EUV mask with gradient absorber thickness, 88801D (9 September 2013); doi: 10.1117/12.2031135
Mask Pattern Generators
Proc. SPIE 8880, Performance of the proof-of-concept multi-beam mask writer (MBMW POC), 88801E (1 October 2013); doi: 10.1117/12.2030772
Proc. SPIE 8880, Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design, 88801F (9 September 2013); doi: 10.1117/12.2028944
Proc. SPIE 8880, Turret-type electron gun for EBM-8000, 88801G (9 September 2013); doi: 10.1117/12.2027456
Simulation, OPC, and Mask Data Preparation III
Proc. SPIE 8880, EUV multilayer defect compensation (MDC): latest progress on model and compensation methods, 88801H (20 September 2013); doi: 10.1117/12.2028945
Proc. SPIE 8880, Using segmented models for initial mask perturbation and OPC speedup, 88801I (9 September 2013); doi: 10.1117/12.2027718
Proc. SPIE 8880, Full chip implant correction with wafer topography OPC modeling in 2x nm bulk technologies, 88801J (1 October 2013); doi: 10.1117/12.2027291
Poster Session
Proc. SPIE 8880, High-fidelity dummy fill printing with repair OPC, 88801K (9 September 2013); doi: 10.1117/12.2022009
Proc. SPIE 8880, Phase preservation study on ArF mask for haze-free mask resist strip and cleaning, 88801L (9 September 2013); doi: 10.1117/12.2023019
Proc. SPIE 8880, A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements, 88801M (9 September 2013); doi: 10.1117/12.2023109
Proc. SPIE 8880, A study on the ESD damage of a silicon oxy-nitride hard mask on the chromium surface of PSM blank, 88801N (1 October 2013); doi: 10.1117/12.2025457
Proc. SPIE 8880, In-die mask registration measurement on 28nm-node and beyond, 88801O (9 September 2013); doi: 10.1117/12.2025462
Proc. SPIE 8880, Alternative material to mitigate chrome degradation on high volume ArF layers, 88801P (9 September 2013); doi: 10.1117/12.2025466
Proc. SPIE 8880, OPC modeling using AFM CD measurement, 88801Q (9 September 2013); doi: 10.1117/12.2025552
Proc. SPIE 8880, Increased depth of field through wave-front coding: using an off-axis zone plate lens with cubic phase modulation in an EUV microscope, 88801R (20 September 2013); doi: 10.1117/12.2025954