PROCEEDINGS VOLUME 8886
29TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 25-27 JUNE 2013
29th European Mask and Lithography Conference
29TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE
25-27 June 2013
Dresden, Germany
Front Matter: Volume 8886
Proc. SPIE 8886, Front Matter: Volume 8886, 888601 (3 October 2013); doi: 10.1117/12.2048544
Plenary Session
Proc. SPIE 8886, The lithographer's dilemma: shrinking without breaking the bank, 888602 (1 October 2013); doi: 10.1117/12.2030193
Proc. SPIE 8886, Consequent use of IT tools as a driver for cost reduction and quality improvements, 888603 (1 October 2013); doi: 10.1117/12.2031399
EUV Tooling and Further Lithography Options
Proc. SPIE 8886, NXE:3300B platform: imaging applications for Logic and DRAM, 888604 (1 October 2013); doi: 10.1117/12.2030605
Proc. SPIE 8886, Thermal probe nanolithography: in-situ inspection, high-speed, high-resolution, 3D, 888605 (1 October 2013); doi: 10.1117/12.2032318
Optical Lithography and APC
Proc. SPIE 8886, Scanner grid recipe creation improvement for tighter overlay specifications, 888608 (1 October 2013); doi: 10.1117/12.2030186
Proc. SPIE 8886, Challenges in process marginality for advanced technology nodes and tackling its contributors, 888609 (1 October 2013); doi: 10.1117/12.2047086
Mask Materials
Proc. SPIE 8886, Experimental approach to EUV imaging enhancement by mask absorber height optimization, 88860A (1 October 2013); doi: 10.1117/12.2030806
Proc. SPIE 8886, Actinic characterization and modeling of the EUV mask stack, 88860B (1 October 2013); doi: 10.1117/12.2030663
Proc. SPIE 8886, Recent advances in SEMATECH's mask blank development program, the remaining technical challenges, and future outlook, 88860C (1 October 2013); doi: 10.1117/12.2039943
E-beam Lithography
Proc. SPIE 8886, Chemical Semi-Amplified positive E-beam Resist (CSAR 62) for highest resolution, 88860D (1 October 2013); doi: 10.1117/12.2030576
Proc. SPIE 8886, Dose variation and charging due to fogging in electron beam lithography: simulations using CHARIOT Monte Carlo software, 88860E (1 October 2013); doi: 10.1117/12.2032414
Proc. SPIE 8886, Extreme long range process effects characterization and compensation, 88860F (1 October 2013); doi: 10.1117/12.2030664
Metrology and Inspection
Proc. SPIE 8886, Status of the AIMS EUV development project, 88860I (1 October 2013); doi: 10.1117/12.2031611
Proc. SPIE 8886, Changing technology requirements of mask metrology, 88860J (1 October 2013); doi: 10.1117/12.2047087
Proc. SPIE 8886, Utilization of AIMS Bossung plots to predict Qz height deviations from nominal, 88860K (1 October 2013); doi: 10.1117/12.2031618
Proc. SPIE 8886, Application of Mueller matrix spectroscopic ellipsometry to determine line edge roughness on photomasks, 88860L (1 October 2013); doi: 10.1117/12.2030627
Resolution Enhancement and DfM
Proc. SPIE 8886, Looking for simple engineering solutions in DFM patents, 88860M (1 October 2013); doi: 10.1117/12.2028831
Proc. SPIE 8886, Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer, 88860N (1 October 2013); doi: 10.1117/12.2030968
Proc. SPIE 8886, Improving inspectability of sub-2x-nm node masks with complex SRAF, 88860O (1 October 2013); doi: 10.1117/12.2030976
Proc. SPIE 8886, Model-based SRAF solutions for advanced technology nodes, 88860P (1 October 2013); doi: 10.1117/12.2031789
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