Proceedings Volume 8986 is from: Logo
SPIE OPTO
1-6 February 2014
San Francisco, California, United States
Front Matter
Proc. SPIE 8986, Front Matter: Volume 8986, 898601 (3 April 2014); doi: 10.1117/12.2063889
Growth I
Proc. SPIE 8986, Large-area bow-free n+ GaN templates by HVPE for LEDs, 898602 (8 March 2014); doi: 10.1117/12.2041642
Proc. SPIE 8986, Growth of bulk GaN crystal by Na flux method, 898603 (8 March 2014); doi: 10.1117/12.2038281
Proc. SPIE 8986, Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate, 898607 (8 March 2014); doi: 10.1117/12.2038848
Growth II
Proc. SPIE 8986, Crystal quality improvement of semipolar (20-21) GaN on patterned sapphire substrates by in-situ deposited SiN mask, 89860A (8 March 2014); doi: 10.1117/12.2037238
Growth III
Proc. SPIE 8986, New directions in GaN material research: thinner and smaller, 89860C (8 March 2014); doi: 10.1117/12.2040729
Proc. SPIE 8986, The growth of hexagonal GaN-on-Si(100) using pulsed laser deposition, 89860F (8 March 2014); doi: 10.1117/12.2039742
Material Characterization I
Proc. SPIE 8986, Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs, 89860L (8 March 2014); doi: 10.1117/12.2036984
Material Characterization II
Proc. SPIE 8986, Gain saturation in InGaN superluminescent diodes, 89860P (8 March 2014); doi: 10.1117/12.2039862
Proc. SPIE 8986, Point defect management in GaN by Fermi-level control during growth, 89860T (8 March 2014); doi: 10.1117/12.2041018
Material Characterization III
Proc. SPIE 8986, Radiative and nonradiative decay of excitons in GaN nanowires, 89860V (8 March 2014); doi: 10.1117/12.2039082
Nanostructures and Devices I
Proc. SPIE 8986, Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs, 89860Z (8 March 2014); doi: 10.1117/12.2036924
Proc. SPIE 8986, The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy, 898613 (8 March 2014); doi: 10.1117/12.2039627
Nanostructures and Devices II
Proc. SPIE 8986, p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics, 898617 (8 March 2014); doi: 10.1117/12.2040847
Proc. SPIE 8986, Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN superstructure magic alloys fabricated at raised temperature (SMART), 89861B (8 March 2014); doi: 10.1117/12.2042121
Electrical Properties and Devices
Proc. SPIE 8986, Defects in GaN based transistors, 89861C (8 March 2014); doi: 10.1117/12.2042020
Proc. SPIE 8986, Effect of electron density on cutoff frequency of III-N HFETs, 89861D (8 March 2014); doi: 10.1117/12.2036914
Proc. SPIE 8986, Electrical characteristics of AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes irradiated with protons, 89861E (8 March 2014); doi: 10.1117/12.2037637
LED I
Proc. SPIE 8986, III-nitride tunnel junctions for efficient solid state lighting, 89861F (8 March 2014); doi: 10.1117/12.2039382
Proc. SPIE 8986, Monolithic white light emitting diodes using a (Ga,In)N-based light converter, 89861G (8 March 2014); doi: 10.1117/12.2037589
Proc. SPIE 8986, Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities, 89861H (8 March 2014); doi: 10.1117/12.2038714
Proc. SPIE 8986, Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model, 89861I (8 March 2014); doi: 10.1117/12.2039374
Lasers
Proc. SPIE 8986, Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers, 89861K (8 March 2014); doi: 10.1117/12.2037484
Proc. SPIE 8986, Recent advances in c-plane GaN visible lasers, 89861L (8 March 2014); doi: 10.1117/12.2041298
Proc. SPIE 8986, Advances in AlGaInN laser diode technology, 89861O (8 March 2014); doi: 10.1117/12.2039253
Proc. SPIE 8986, Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress, 89861P (8 March 2014); doi: 10.1117/12.2039646
LED Efficiency Droop I: Joint Session with Conferences 8986 and 9003
Proc. SPIE 8986, Auger recombination and leakage in InGaN/GaN quantum well LEDs, 89861R (8 March 2014); doi: 10.1117/12.2037043
LED Efficiency Droop II: Joint Session with Conferences 8986 and 9003
Proc. SPIE 8986, Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes, 89861S (8 March 2014); doi: 10.1117/12.2037986
LED II
Proc. SPIE 8986, High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime, 89861V (8 March 2014); doi: 10.1117/12.2037856
Proc. SPIE 8986, Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping, 89861W (8 March 2014); doi: 10.1117/12.2037132
LED III
Proc. SPIE 8986, Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates, 898620 (8 March 2014); doi: 10.1117/12.2041082
Poster Session
Proc. SPIE 8986, Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures, 898627 (8 March 2014); doi: 10.1117/12.2037286
Proc. SPIE 8986, Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach, 898628 (8 March 2014); doi: 10.1117/12.2037930
Proc. SPIE 8986, Characterization of 380nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition, 898629 (8 March 2014); doi: 10.1117/12.2039621
Proc. SPIE 8986, Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED , 89862A (8 March 2014); doi: 10.1117/12.2040086
Proc. SPIE 8986, Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si, 89862B (8 March 2014); doi: 10.1117/12.2040621
Proc. SPIE 8986, Determination of carrier diffusion length in p- and n-type GaN, 89862C (8 March 2014); doi: 10.1117/12.2040645
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