Front Matter
Proc. SPIE 8987, Front Matter: Volume 8987, 898701 (4 April 2014); doi: 10.1117/12.2063892
Transparent Conducting Oxides
Proc. SPIE 8987, Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO, 898702 (8 March 2014); doi: 10.1117/12.2042567
Proc. SPIE 8987, TiO2 anode materials for lithium-ion batteries with different morphology and additives, 898703 (8 March 2014); doi: 10.1117/12.2038034
Proc. SPIE 8987, Mid-infrared extraordinary transmission through Ga-doped ZnO films with 2D hole arrays, 898704 (8 March 2014); doi: 10.1117/12.2042477
Proc. SPIE 8987, Numerical and experimental study of SnOx | Ag | SnOx multilayer as indium-free transparent electrode for organic solar cells, 898706 (8 March 2014); doi: 10.1117/12.2039067
Photon-induced Phenomena
Proc. SPIE 8987, Nanoscale optical and electrical characterizations of ZnO nanostructures by near-field microscopy, 89870A (8 March 2014); doi: 10.1117/12.2042151
Proc. SPIE 8987, Emission characteristics of electrically- and optically-pumped single ZnO micro-spherical crystal, 89870B (8 March 2014); doi: 10.1117/12.2038922
Proc. SPIE 8987, Carrier dynamics in dilute II-VI oxide highly mismatched alloys, 89870D (8 March 2014); doi: 10.1117/12.2039837
Proc. SPIE 8987, Optical characterization of laterally and vertically structured oxides and semiconductors, 89870E (8 March 2014); doi: 10.1117/12.2042181
Proc. SPIE 8987, Optical properties of ZnO thin films dispersed with noble metal nanoparticles synthesized by sol-gel method, 89870F (8 March 2014); doi: 10.1117/12.2037556
Proc. SPIE 8987, Control of optical and electrical properties of ZnO nanocrystals by nanosecond-laser annealing, 89870G (8 March 2014); doi: 10.1117/12.2039184
Proc. SPIE 8987, Electroluminescence from ZnO nanowire-based heterojunction LED, 89870H (8 March 2014); doi: 10.1117/12.2039705
Proc. SPIE 8987, Effect of lithium-ion implantation of varying fluence on the optical properties of ZnMgO, 89870I (8 March 2014); doi: 10.1117/12.2041865
Proc. SPIE 8987, Optical properties and storage capabilities of AB2O4:Cr3+ (A=Zn, Mg, B=Ga, Al) , 89870J (8 March 2014); doi: 10.1117/12.2048836
Doping and Band Structure Studies of Oxides
Proc. SPIE 8987, Polymorphism, band-structure, band-lineup, and alloy energetics of the group II oxides and sulfides MgO, ZnO, CdO, MgS, ZnS, CdS , 89870K (8 March 2014); doi: 10.1117/12.2043587
Proc. SPIE 8987, Development of blue excitable persistent phosphor of Ce3+-doped garnet ceramics by bandgap engineering and metal-sensitization, 89870L (8 March 2014); doi: 10.1117/12.2042654
Proc. SPIE 8987, Doping of Ga2O3 bulk crystals and NWs by ion implantation, 89870M (8 March 2014); doi: 10.1117/12.2037627
Doping and Band Structure Studies of ZnO
Proc. SPIE 8987, Theoretical investigations of the electronic properties of functionalized zinc-oxide nanowires, 89870S (8 March 2014); doi: 10.1117/12.2037560
Highly-Correlated Oxides I
Proc. SPIE 8987, Atomic collision effects during PLD processes: nonstoichiometry control in transparent superconductors, 89870U (8 March 2014); doi: 10.1117/12.2045551
Proc. SPIE 8987, Augmented methods for growth and development of novel multi-cation oxides, 89870V (8 March 2014); doi: 10.1117/12.2045292
Proc. SPIE 8987, Synthesis of epitaxial rutile-type VO2 and VO2(B) polymorph films, 89870W (8 March 2014); doi: 10.1117/12.2044055
Highly-Correlated Oxides II
Proc. SPIE 8987, Photocarrier recombination and localization dynamics of LaAlO3/SrTiO3 heterostructures, 898710 (8 March 2014); doi: 10.1117/12.2038785
Proc. SPIE 8987, Analysis of Low Temperature Magnetoresistance of LaAlO3/SrTiO3 Interfaces, 898711 (8 March 2014); doi: 10.1117/12.2045022
Proc. SPIE 8987, Growth of crystalline LaAlO3 by atomic layer deposition , 898712 (8 March 2014); doi: 10.1117/12.2045532
Proc. SPIE 8987, Photon-induced thermoelectric voltages in complex oxide superlattices, 898713 (8 March 2014); doi: 10.1117/12.2047336
Proc. SPIE 8987, Raman study of magnetic phase transitions of hexagonal manganites, 898715 (8 March 2014); doi: 10.1117/12.2052579
Proc. SPIE 8987, Crystal, magnetic and dielectric studies of the 2D antiferromagnet: β-NaMnO2, 898716 (8 March 2014); doi: 10.1117/12.2036937
Proc. SPIE 8987, Lattice location of Hf and its interaction with other impurities in LiNbO3: an integrated review, 898717 (8 March 2014); doi: 10.1117/12.2037650
Thin Films and Bulk Processing
Proc. SPIE 8987, Is ZnO as a universal semiconductor material an oxymoron?, 898718 (8 March 2014); doi: 10.1117/12.2042926
Proc. SPIE 8987, Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers, 898719 (2 April 2014); doi: 10.1117/12.2043704
Proc. SPIE 8987, Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization, 89871A (8 March 2014); doi: 10.1117/12.2041081
Proc. SPIE 8987, Role of grain boundaries in ZnO, 89871B (8 March 2014); doi: 10.1117/12.2042752
Proc. SPIE 8987, Electrical and optical properties of ZnO bulk crystals with and without lithium grown by the hydrothermal technique, 89871D (8 March 2014); doi: 10.1117/12.2042344
Growth, Properties, and Applications of Nanostructures
Proc. SPIE 8987, ZnO micro/nanocrystals grown by laser assisted flow deposition, 89871F (8 March 2014); doi: 10.1117/12.2039907
Proc. SPIE 8987, Metal-oxide semiconductor nanostructures for energy and sensing applications, 89871G (8 March 2014); doi: 10.1117/12.2041847
Proc. SPIE 8987, Effect of electric field and atmosphere on the processing of nanocrystalline ZnO, 89871H (8 March 2014); doi: 10.1117/12.2042872
Proc. SPIE 8987, Upconversion properties of Er3+-doped oxyfluoride glass-ceramics containing SrF2 nanocrystals, 89871J (8 March 2014); doi: 10.1117/12.2039308
Proc. SPIE 8987, Flexible binder free functionalized carbon nanotube electrodes for ultracapacitor, 89871K (8 March 2014); doi: 10.1117/12.2045653
ZnO-based Transistors
Proc. SPIE 8987, Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates, 89871L (8 March 2014); doi: 10.1117/12.2044554
Oxide-based Detectors
Proc. SPIE 8987, High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy, 89871P (8 March 2014); doi: 10.1117/12.2045555
Proc. SPIE 8987, Contact properties and surface reaction kinetics of single ZnO nanowire devices fabricated by dielectrophoresis, 89871Q (8 March 2014); doi: 10.1117/12.2044456
Proc. SPIE 8987, Controlling the properties of electrodeposited ZnO nanowire arrays for light emitting diode, photodetector and gas sensor applications, 89871R (8 March 2014); doi: 10.1117/12.2039839
Proc. SPIE 8987, Multi-layer insulator for low voltage and breakdown voltage enhancement in electrowetting-on-dielectric, 89871S (8 March 2014); doi: 10.1117/12.2040234
Oxide-based Light Emitters
Proc. SPIE 8987, Blue-red electroluminescence from hybrid Eu:phosphors/ZnO-nanowires/p-GaN LED, 89871T (8 March 2014); doi: 10.1117/12.2041772
Proc. SPIE 8987, [beta]-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and [beta]-Ga2O3 potential for next generation of power devices, 89871U (8 March 2014); doi: 10.1117/12.2039305
Proc. SPIE 8987, Investigation of ZnO-based ultraviolet light-emitting diodes, 89871W (8 March 2014); doi: 10.1117/12.2044343
Proc. SPIE 8987, Functional metal oxide nanostructures fabricated by 3D-nanotemplate PLD, 89871X (8 March 2014); doi: 10.1117/12.2044357
Proc. SPIE 8987, UV detectors and LEDs in different metal oxide nanostructures, 89871Y (8 March 2014); doi: 10.1117/12.2038189
Proc. SPIE 8987, Plasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes, 898720 (8 March 2014); doi: 10.1117/12.2042305
Energy Harvesting Storage: Materials and Devices
Proc. SPIE 8987, High-efficiency heterojunction solar cells on crystalline germanium substrates, 898722 (8 March 2014); doi: 10.1117/12.2045632
Proc. SPIE 8987, Material properties of high-mobility TCOs and application to solar cells, 898723 (8 March 2014); doi: 10.1117/12.2039278
Proc. SPIE 8987, Light trapping considerations in self-assembled ZnO nanorod arrays for quantum dot sensitized solar cells, 898725 (8 March 2014); doi: 10.1117/12.2045535
Proc. SPIE 8987, Oxides for sustainable photovoltaics with earth-abundant materials, 898726 (8 March 2014); doi: 10.1117/12.2044734
Proc. SPIE 8987, Tailor-made ZnO@SnO2 networks for high-efficiency photovoltaic devices, 898728 (8 March 2014); doi: 10.1117/12.2040382
Proc. SPIE 8987, Design and synthesis of new low band gap organic semiconductors for photovoltaic applications, 898729 (8 March 2014); doi: 10.1117/12.2045655
Energy Harvesting Storage: Metal Oxides and Graphene
Proc. SPIE 8987, Chemical bonding and stability of multilayer graphene oxide layers, 89872C (8 March 2014); doi: 10.1117/12.2045554
Proc. SPIE 8987, Engineering metal oxide structures for efficient photovoltaic devices, 89872E (8 March 2014); doi: 10.1117/12.2038872