Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI
Proceedings Volume 8996 is from: Logo
1-6 February 2014
San Francisco, California, United States
Front Matter: Volume 8996
Proc. SPIE 8996, Front Matter: Volume 8996, 899601 (17 March 2014);
Integrated Nanostructures
Proc. SPIE 8996, Molecular beam epitaxial growth and characterization of intrinsic and p-type InN nanowires, 899602 (19 February 2014);
Proc. SPIE 8996, Epitaxial growth of quantum dots on InP for device applications operating in the 1.55 µm wavelength range, 899606 (19 February 2014);
Nanowire Epitaxy and Theory
Proc. SPIE 8996, Nonplanar nanoselective area growth of InGaAs/InP, 899608 (19 February 2014);
Nanostructure Characterization
Proc. SPIE 8996, Electrical characterization of semiconductor nanowires by scanning tunneling microscopy, 89960E (19 February 2014);
Proc. SPIE 8996, Optical and electrical characterization of surface passivated GaAs nanostructures, 89960G (19 February 2014);
Quantum Dot Emission
Proc. SPIE 8996, Plasmon-enhanced ultrathin bulk heterojunction: interplay between optical and thermal responses of AuNPs, 89960M (19 February 2014);
Quantum Dot Devices
Proc. SPIE 8996, Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors, 89960P (19 February 2014);
Poster Session
Proc. SPIE 8996, Structural and optical characterization of fresh water diatoms (Cyclotella sp.): nature's nanoporous silica manufacturing plant, 89960Y (19 February 2014);
Proc. SPIE 8996, Substrate-induced effects on the plasmonic properties of strongly coupled silver nanocubes, 899612 (19 February 2014);
Proc. SPIE 8996, Plasmonic properties of silver nanocube monolayers deposited on thin metal films, 899613 (19 February 2014);
Proc. SPIE 8996, Optimisation study of the synthesis of vanadium oxide nanostructures using pulsed laser deposition, 899615 (19 February 2014);
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