PROCEEDINGS VOLUME 9002
SPIE OPTO | 1-6 FEBRUARY 2014
Novel In-Plane Semiconductor Lasers XIII
Proceedings Volume 9002 is from: Logo
SPIE OPTO
1-6 February 2014
San Francisco, California, United States
Front Matter: Volume 9002
Proc. SPIE 9002, Front Matter: Volume 9002, 900201 (27 March 2014); doi: 10.1117/12.2063990
Quantum Dots
Proc. SPIE 9002, Development of broad spectral bandwidth hybrid QW/QD structures from 1000-1400 nm, 900204 (27 February 2014); doi: 10.1117/12.2039025
New Materials and Grating Controlled
Proc. SPIE 9002, Red emitting monolithic dual wavelength DBR diode lasers for shifted excitation Raman difference spectroscopy, 900208 (27 February 2014); doi: 10.1117/12.2035487
Proc. SPIE 9002, Bragg-grating-stabilized external cavity lasers for gas sensing using tunable diode laser spectroscopy, 900209 (27 February 2014); doi: 10.1117/12.2039971
Proc. SPIE 9002, Properties of 62x nm red-emitting single-mode diode lasers, 90020A (27 February 2014); doi: 10.1117/12.2037739
Mode Locked
Proc. SPIE 9002, Mode-locked InAs/InP quantum-dash-based DBR laser with monolithically integrated SOA, 90020C (27 February 2014); doi: 10.1117/12.2041261
Proc. SPIE 9002, Femtosecond semiconductor laser system with arbitrary intracavity phase and amplitude manipulation, 90020D (27 February 2014); doi: 10.1117/12.2039206
Proc. SPIE 9002, Femtosecond pulse generation from a two-section mode-locked quantum-dot laser using random population, 90020E (27 February 2014); doi: 10.1117/12.2039130
Proc. SPIE 9002, Second harmonic pico-second pulse generation with mode-locked 1064nm DBR laser diodes, 90020F (27 February 2014); doi: 10.1117/12.2036321
Nitrides
Proc. SPIE 9002, Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition, 90020H (27 February 2014); doi: 10.1117/12.2036835
Proc. SPIE 9002, Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes, 90020I (27 February 2014); doi: 10.1117/12.2037336
Proc. SPIE 9002, Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes, 90020K (27 February 2014); doi: 10.1117/12.2039134
Lasers on Silicon
Proc. SPIE 9002, Heterogeneously integrated lasers on silicon, 90020U (27 February 2014); doi: 10.1117/12.2042023
Proc. SPIE 9002, Hybrid III-V on silicon lasers for photonic integrated circuits on silicon, 90020X (27 February 2014); doi: 10.1117/12.2044258
Photonic Bandgap and Microcavity
Proc. SPIE 9002, Photonic crystal surface-emitting lasers as a pumping light source for second harmonic generation, 90020Z (27 February 2014); doi: 10.1117/12.2038675
Mid-Infrared Lasers: Sb-based
Proc. SPIE 9002, Cascade pumping of GaSb-based type-I quantum well diode lasers, 900213 (27 February 2014); doi: 10.1117/12.2038429
Proc. SPIE 9002, Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 µm, 900214 (27 February 2014); doi: 10.1117/12.2036528
Proc. SPIE 9002, 2-micron GaSb-based metamorphic laser grown on GaAs, 900216 (27 February 2014); doi: 10.1117/12.2042004
Mid-Infrared QCLs II
Proc. SPIE 9002, AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy, 90021A (27 February 2014); doi: 10.1117/12.2036359
Mid-Infrared Lasers II
Proc. SPIE 9002, Interband cascade lasers for the mid-infrared spectral region, 90021B (27 February 2014); doi: 10.1117/12.2038130
Proc. SPIE 9002, High-power CW performance of 7-stage interband cascade lasers, 90021C (27 February 2014); doi: 10.1117/12.2039941
Proc. SPIE 9002, Quantum band engineering of nitride semiconductors for infrared lasers, 90021D (27 February 2014); doi: 10.1117/12.2036286
Proc. SPIE 9002, High performance InP-based InAs triangular quantum well lasers operating beyond 2 μm, 90021E (27 February 2014); doi: 10.1117/12.2043222
High Brightness/High Efficiency
Proc. SPIE 9002, High-power and high-efficiency broad-area diode laser emitting at 1.5 um, 90021F (27 February 2014); doi: 10.1117/12.2040458
Proc. SPIE 9002, Very high-power broad area laser diode with internal wavelength stabilization at 975 nm for Yb fibre laser pumping, 90021G (27 February 2014); doi: 10.1117/12.2039726
Proc. SPIE 9002, Defect temperature kinetics during Catastrophic Optical Damage in high power diode lasers, 90021H (27 February 2014); doi: 10.1117/12.2035488
Proc. SPIE 9002, Cryogenic ultra-high power infrared diode laser bars, 90021I (27 February 2014); doi: 10.1117/12.2041279
Proc. SPIE 9002, Realization of high-power narrow beam divergence in photonic-crystal surface-emitting laser, 90021J (27 February 2014); doi: 10.1117/12.2038659
QCL Arrays/Tunable QCLs
Proc. SPIE 9002, Integrated widely tunable quantum cascade lasers with super-structure gratings, 90021N (27 February 2014); doi: 10.1117/12.2040965
Proc. SPIE 9002, InGaAs/InP-based Echelle mirror multiplexer using dual Rowland circle gratings for DFB QCL arrays in the mid-long infrared range, 90021O (27 February 2014); doi: 10.1117/12.2039075
Mid-Infrared QCLs III
Proc. SPIE 9002, The role of electron temperature in the leakage current in QCLs and its impact on the quantum efficiency, 90021R (27 February 2014); doi: 10.1117/12.2036371
Proc. SPIE 9002, Non-resonant optical modulation of quantum cascade laser and its application potential in infrared spectroscopy, 90021T (27 February 2014); doi: 10.1117/12.2048512
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