PROCEEDINGS VOLUME 9003
SPIE OPTO | 1-6 FEBRUARY 2014
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Proceedings Volume 9003 is from: Logo
SPIE OPTO
1-6 February 2014
San Francisco, California, United States
Front Matter: Volume 9003
Proc. SPIE 9003, Front Matter: Volume 9003, 900301 (31 March 2014); doi: 10.1117/12.2063883
Solid State Lighting I
Proc. SPIE 9003, Merit function for the evaluation of color uniformity in the far field of LED spot lights, 900303 (27 February 2014); doi: 10.1117/12.2043545
Proc. SPIE 9003, Dual phosphors-converted white LEDs modeling by using near-field chromatic luminance data, 900304 (27 February 2014); doi: 10.1117/12.2044252
Nanotechnologies for LEDs I
Proc. SPIE 9003, Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes, 900306 (27 February 2014); doi: 10.1117/12.2041284
High-Current LED Performance
Proc. SPIE 9003, Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method, 90030D (27 February 2014); doi: 10.1117/12.2040710
Proc. SPIE 9003, Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate, 90030E (27 February 2014); doi: 10.1117/12.2038764
Proc. SPIE 9003, Improvement of carrier distribution by using thinner quantum well with different location, 90030F (27 February 2014); doi: 10.1117/12.2038402
Nanotechnologies for LEDs II
Proc. SPIE 9003, Long wavelength nanowire light emitting diodes, 90030H (27 February 2014); doi: 10.1117/12.2042813
Proc. SPIE 9003, Nanorod-structured flip-chip GaN-based white light-emitting diodes, 90030I (13 March 2014); doi: 10.1117/12.2038953
LED Fabrication
Proc. SPIE 9003, New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors, 90030L (27 February 2014); doi: 10.1117/12.2039078
Proc. SPIE 9003, Advanced packaging methods for high-power LED modules, 90030M (27 February 2014); doi: 10.1117/12.2040076
Proc. SPIE 9003, The performance of GaN LEDs using an embedded finger-type contact, 90030O (27 February 2014); doi: 10.1117/12.2037274
UV LEDs
Proc. SPIE 9003, Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers, 90030S (27 February 2014); doi: 10.1117/12.2039347
Novel LED Technologies
Proc. SPIE 9003, High efficiency green light-emitting diodes based on InGaN-ZnGeN2 type-II quantum wells, 90030W (27 February 2014); doi: 10.1117/12.2038756
LED Efficiency Droop I: Joint Session with Conference 8986
Proc. SPIE 9003, Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs, 90030Z (27 February 2014); doi: 10.1117/12.2038698
Proc. SPIE 9003, Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments, 900310 (27 February 2014); doi: 10.1117/12.2043234
LED Efficiency Droop II: Joint Session with Conference 8986
Proc. SPIE 9003, Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices, 900311 (27 February 2014); doi: 10.1117/12.2044397
Novel Substrates for LEDs
Proc. SPIE 9003, Ammonothermal bulk GaN substrates for LEDs, 900313 (27 February 2014); doi: 10.1117/12.2042587
Proc. SPIE 9003, Extremely high current density over 1000 A/cm2 operation in M-GaN LEDs on bulk GaN substrates with low-efficiency droop, 900316 (27 February 2014); doi: 10.1117/12.2047235
Solid State Lighting II
Proc. SPIE 9003, Adjustable spectrum LED solar simulator, 900317 (27 February 2014); doi: 10.1117/12.2035649
Proc. SPIE 9003, Spectral behavior and coherence length of GaN- and AlGaInP-based light-emitting diodes, 900318 (27 February 2014); doi: 10.1117/12.2037875
Proc. SPIE 9003, Permanent transparent color-warming glazes for dimmable and non-dimmable LED bulbs, 900319 (27 February 2014); doi: 10.1117/12.2039636
Proc. SPIE 9003, Thermal, optical, and electrical engineering of an innovative tunable white LED light engine, 90031B (27 February 2014); doi: 10.1117/12.2040599
Poster Session
Proc. SPIE 9003, A NOx and SO2 gas analyzer using deep-UV and violet light-emitting diodes for continuous emissions monitoring systems, 90031F (27 February 2014); doi: 10.1117/12.2036159
Proc. SPIE 9003, Novel samarium/erbium and samarium/terbium codoped glass phosphor for application in warm white light-emitting-diode, 90031G (27 February 2014); doi: 10.1117/12.2036372
Proc. SPIE 9003, Study of grating layer location of a GaN nano-grated LED for improvement of transmission efficiency, 90031J (27 February 2014); doi: 10.1117/12.2038014
Proc. SPIE 9003, High-color rendering indices performance of glass based phosphor-converted white light-emitting diodes for solid state lighting, 90031K (27 February 2014); doi: 10.1117/12.2038823
Proc. SPIE 9003, Multicolor upconversion luminescence of rare-earth doped Y2CaZnO5 nanophosphors for white light emitting diodes, 90031N (27 February 2014); doi: 10.1117/12.2039237
Proc. SPIE 9003, Classification evaluation of tobaccos using LED-induced fluorescence spectroscopy, 90031O (27 February 2014); doi: 10.1117/12.2039367
Proc. SPIE 9003, Real-time monitoring of sulfur dioxide using ultraviolet light-emitting diode, 90031P (27 February 2014); doi: 10.1117/12.2039430
Proc. SPIE 9003, Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements, 90031R (27 February 2014); doi: 10.1117/12.2040926
Proc. SPIE 9003, Microscope investigation and electrical conductivity of Si-doped n-type Al0.45Ga0.55N layer grown on AlGaN/AlN superlattices, 90031S (27 February 2014); doi: 10.1117/12.2041398
Proc. SPIE 9003, Electrical efficiency and droop in MQW LEDs, 90031T (27 February 2014); doi: 10.1117/12.2041567
Proc. SPIE 9003, Portable fluorescence spectroscopy platform for Huanglongbing (HLB) citrus disease in situ detection, 90031U (27 February 2014); doi: 10.1117/12.2051361
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