PROCEEDINGS VOLUME 9048
SPIE ADVANCED LITHOGRAPHY | 23-27 FEBRUARY 2014
Extreme Ultraviolet (EUV) Lithography V
Proceedings Volume 9048 is from: Logo
SPIE ADVANCED LITHOGRAPHY
23-27 February 2014
San Jose, California, United States
Front Matter: Volume 9048
Proc. SPIE 9048, Front Matter: Volume 9048, 904801 (29 April 2014); doi: 10.1117/12.2065428
New EUV Resist Materials: Joint Session with Conferences 9048 and 9051
Proc. SPIE 9048, EUV resists towards 11nm half-pitch, 904804 (17 April 2014); doi: 10.1117/12.2046459
Proc. SPIE 9048, Investigation of novel inorganic resist materials for EUV lithography, 904805 (17 April 2014); doi: 10.1117/12.2046677
Stochastics and EUV Process Improvements: Joint Session with Conferences 9048 and 9051
Proc. SPIE 9048, Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography, 904806 (17 April 2014); doi: 10.1117/12.2046225
Proc. SPIE 9048, Understanding EUV resist mottling leading to better resolution and linewidth roughness, 904807 (17 April 2014); doi: 10.1117/12.2046392
Proc. SPIE 9048, Comparison of EUV patterning performance between PTD and NTD for 1Xnm DRAM, 904808 (17 April 2014); doi: 10.1117/12.2046624
Proc. SPIE 9048, Impact of stochastic effects on EUV printability limits, 904809 (17 April 2014); doi: 10.1117/12.2047827
Proc. SPIE 9048, EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns, 90480A (17 April 2014); doi: 10.1117/12.2048282
EUV Source
Proc. SPIE 9048, Sub-hundred Watt operation demonstration of HVM LPP-EUV source, 90480D (17 April 2014); doi: 10.1117/12.2046776
Proc. SPIE 9048, Highly-efficient high-power pulsed CO2 laser characterized by transverse-flow laser amplifiers, 90480E (17 April 2014); doi: 10.1117/12.2045566
Proc. SPIE 9048, Spectral purity enhancement for the EUV lithography systems by suppressing UV reflection from multilayers, 90480G (17 April 2014); doi: 10.1117/12.2046415
EUV Mask I
Proc. SPIE 9048, Production of EUV mask blanks with low killer defects, 90480H (17 April 2014); doi: 10.1117/12.2048541
Proc. SPIE 9048, Mitigation of EUV mask blank substrate pit and scratch defects by Accelerated Neutral Atom Beam (ANAB) processing, 90480I (18 March 2014); doi: 10.1117/12.2046686
Proc. SPIE 9048, Durability of Ru-based EUV masks and the improvement, 90480J (17 April 2014); doi: 10.1117/12.2046556
EUV Mask II
Proc. SPIE 9048, Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes, 90480L (17 April 2014); doi: 10.1117/12.2048074
Proc. SPIE 9048, Evaluation of mask repair strategies via focused electron, helium, and neon beam induced processing for EUV applications, 90480M (17 April 2014); doi: 10.1117/12.2046712
Proc. SPIE 9048, Effect of cleaning and storage on quartz substrate adhesion and surface energy, 90480N (17 April 2014); doi: 10.1117/12.2048310
Proc. SPIE 9048, Direct measurement of carbon contamination topography on patterned EUV masks, 90480O (17 April 2014); doi: 10.1117/12.2048092
Proc. SPIE 9048, Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes, 90480P (17 April 2014); doi: 10.1117/12.2048080
EUV Integration
Proc. SPIE 9048, EUV source-mask optimization for 7nm node and beyond, 90480Q (17 April 2014); doi: 10.1117/12.2047584
Proc. SPIE 9048, EUV overlay strategy for improving MMO, 90480R (17 April 2014); doi: 10.1117/12.2048283
Proc. SPIE 9048, Prospects of DUV OoB suppression techniques in EUV lithography, 90480S (17 April 2014); doi: 10.1117/12.2046132
Proc. SPIE 9048, Feasibility of compensating for EUV field edge effects through OPC, 90480T (17 April 2014); doi: 10.1117/12.2046203
Proc. SPIE 9048, Comprehensive defect avoidance framework for mitigating EUV mask defects, 90480U (17 April 2014); doi: 10.1117/12.2046701
Proc. SPIE 9048, Pattern fidelity verification for logic design in EUV lithography, 90480V (17 April 2014); doi: 10.1117/12.2046096
Proc. SPIE 9048, EUV OPC modeling and correction requirements, 90480W (18 March 2014); doi: 10.1117/12.2046341
EUV Mask Metrology
Proc. SPIE 9048, Actinic review of EUV masks: first results from the AIMS EUV system integration, 90480X (24 April 2014); doi: 10.1117/12.2046302
Proc. SPIE 9048, Actinic mask imaging: recent results and future directions from the SHARP EUV microscope, 90480Y (17 April 2014); doi: 10.1117/12.2048364
Proc. SPIE 9048, EUV patterned mask inspection with an advanced projection electron microscope (PEM) system, 90480Z (17 April 2014); doi: 10.1117/12.2045412
Proc. SPIE 9048, Zernike phase contrast microscope for EUV mask inspection, 904810 (17 April 2014); doi: 10.1117/12.2048180
Proc. SPIE 9048, A novel concept for actinic EUV mask review tool using a scanning lensless imaging method at the Swiss Light Source (Withdrawal Notice), 904811 (17 April 2014); doi: 10.1117/12.2046226
Proc. SPIE 9048, E-beam inspection of EUV mask defects: To etch or not to etch?, 904812 (17 April 2014); doi: 10.1117/12.2048284
Metrology Sources and Modeling
Proc. SPIE 9048, High-radiance LDP source for mask inspection application, 904813 (17 April 2014); doi: 10.1117/12.2046423
Proc. SPIE 9048, Enhancing the performance of LPP sources for EUV and BEUV lithography, 904816 (17 April 2014); doi: 10.1117/12.2046544
EUV Resist Outgas Testing
Proc. SPIE 9048, Contribution of EUV resist components to the non-cleanable contaminations, 904819 (17 April 2014); doi: 10.1117/12.2046215
Proc. SPIE 9048, Resist outgassing contamination on EUV multilayer mirror analogues, 90481A (17 April 2014); doi: 10.1117/12.2046613
Proc. SPIE 9048, Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons, 90481B (17 April 2014); doi: 10.1117/12.2047380
EUV Resist I
Proc. SPIE 9048, Increasing sensitivity of oxide nanoparticle photoresists, 90481C (17 April 2014); doi: 10.1117/12.2046555
Proc. SPIE 9048, Novel EUV resist materials for 16nm half pitch and EUV resist defects, 90481D (17 April 2014); doi: 10.1117/12.2046133
Proc. SPIE 9048, Novel EUV resist materials design for 14nm half pitch and below, 90481E (17 April 2014); doi: 10.1117/12.2046205
Proc. SPIE 9048, Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography, 90481F (17 April 2014); doi: 10.1117/12.2046627
Proc. SPIE 9048, Comparative analysis of shot noise in EUV and e-beam lithography, 90481H (17 April 2014); doi: 10.1117/12.2048248
Proc. SPIE 9048, Improved measurement capabilities at the NIST EUV reflectometry facility, 90481I (17 April 2014); doi: 10.1117/12.2046290
Exposure Tools and Extendibility
Proc. SPIE 9048, Across scanner platform optimization to enable EUV lithography at the 10-nm logic node, 90481L (17 April 2014); doi: 10.1117/12.2048314
Proc. SPIE 9048, Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET), 90481M (17 April 2014); doi: 10.1117/12.2046380
Proc. SPIE 9048, Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV), 90481O (17 April 2014); doi: 10.1117/12.2048397
EUV Manufacturing
Proc. SPIE 9048, Integration of an EUV metal layer: a 20/14nm demo, 90481Q (17 April 2014); doi: 10.1117/12.2048285
Proc. SPIE 9048, The economic impact of EUV lithography on critical process modules, 90481R (17 April 2014); doi: 10.1117/12.2046310
Proc. SPIE 9048, High-resist sensitization by pattern and flood combination lithography, 90481S (24 April 2014); doi: 10.1117/12.2046790
Poster Session
Proc. SPIE 9048, EUV source modeling, 90481T (18 March 2014); doi: 10.1117/12.2044783
Proc. SPIE 9048, A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation, 90481U (17 April 2014); doi: 10.1117/12.2045618
Proc. SPIE 9048, Emission properties of tin droplets laser-produced-plasma light sources, 90481V (17 April 2014); doi: 10.1117/12.2045732