Front Matter: Volume 9050
Proc. SPIE 9050, Front Matter: Volume 9050, 905001 (13 May 2014); doi: 10.1117/12.2052784
Hybrid and Virtual Metrology Techniques
Proc. SPIE 9050, Optimizing hybrid metrology through a consistent multi-tool parameter set and uncertainty model, 905004 (14 April 2014); doi: 10.1117/12.2048225
Proc. SPIE 9050, Leveraging data analytics, patterning simulations and metrology models to enhance CD metrology accuracy for advanced IC nodes, 905005 (2 April 2014); doi: 10.1117/12.2046502
Proc. SPIE 9050, New techniques in large scale metrology toolset data mining to accelerate integrated chip technology development and increase manufacturing efficiencies, 905006 (2 April 2014); doi: 10.1117/12.2046274
Proc. SPIE 9050, CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires, 905008 (2 April 2014); doi: 10.1117/12.2047031
Proc. SPIE 9050, Hybrid metrology universal engine: co-optimization, 905009 (2 April 2014); doi: 10.1117/12.2048939
Metrology of 3D Structures
Proc. SPIE 9050, 10nm three-dimensional CD-SEM metrology, 90500A (14 April 2014); doi: 10.1117/12.2045977
Proc. SPIE 9050, Optical technologies for TSV inspection, 90500B (2 April 2014); doi: 10.1117/12.2045705
Proc. SPIE 9050, Addressing FinFET metrology challenges in 1X node using tilt-beam CD-SEM, 90500C (2 April 2014); doi: 10.1117/12.2046881
Proc. SPIE 9050, Novel three dimensional (3D) CD-SEM profile measurements, 90500D (2 April 2014); doi: 10.1117/12.2047374
Proc. SPIE 9050, Metrology of white light interferometer for TSV processing, 90500F (2 April 2014); doi: 10.1117/12.2047383
SEM Simulation and Emulation I: Joint Session with Conferences 9050 and 9051
Proc. SPIE 9050, Influence of metrology error in measurement of line edge roughness power spectral density, 90500G (14 April 2014); doi: 10.1117/12.2047100
Proc. SPIE 9050, New integrated Monte Carlo code for the simulation of high-resolution scanning electron microscopy images for metrology in microlithography, 90500I (2 April 2014); doi: 10.1117/12.2048306
Proc. SPIE 9050, Correction of EB-induced shrinkage in contour measurements, 90500J (2 April 2014); doi: 10.1117/12.2047563
Proc. SPIE 9050, Dependence of secondary-electron yield on aspect ratio of several trench patterns, 90500K (2 April 2014); doi: 10.1117/12.2044662
SEM Simulation and Emulation II: Joint Session with Conferences 9050 and 9051
Proc. SPIE 9050, Determination of line edge roughness in low dose top-down scanning electron microscopy images, 90500L (2 April 2014); doi: 10.1117/12.2046493
Proc. SPIE 9050, Cross-sectional profile prediction from top-view SEM images based on root-cause decomposition of line-edge roughness, 90500M (2 April 2014); doi: 10.1117/12.2045457
Metrology and Inspection for Directed Self-Assembly: Joint Session with Conferences 9049 and 9050
Proc. SPIE 9050, Metrology for directed self-assembly block lithography using optical scatterometry, 90500N (2 April 2014); doi: 10.1117/12.2047111
Proc. SPIE 9050, Novel metrology methods for fast 3D characterization of directed self-assembly (DSA) patterns for high volume manufacturing, 90500O (2 April 2014); doi: 10.1117/12.2046785
Metrology for Process Control
Proc. SPIE 9050, Estimating pattern sensitivity to the printing process for varying dose/focus conditions for RET development in the sub-22nm era, 90500P (2 April 2014); doi: 10.1117/12.2045463
Proc. SPIE 9050, Lithography run-to-run control in high mix manufacturing environment with a dynamic state estimation approach, 90500Q (2 April 2014); doi: 10.1117/12.2046331
Proc. SPIE 9050, Improvement of inter-field CDU by using on-product focus control, 90500R (2 April 2014); doi: 10.1117/12.2046224
Proc. SPIE 9050, Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET), 90500S (2 April 2014); doi: 10.1117/12.2047098
SEM, AFM, and SPM
Proc. SPIE 9050, CD-SEM metrology for sub-10nm width features, 90500T (2 April 2014); doi: 10.1117/12.2047099
Proc. SPIE 9050, Improving SEM image quality using pixel super resolution technique, 90500U (2 April 2014); doi: 10.1117/12.2046426
Proc. SPIE 9050, Contour-based metrology for complex 2D shaped patterns printed by multiple-patterning process, 90500V (2 April 2014); doi: 10.1117/12.2046783
Proc. SPIE 9050, Parallel SPM cantilever arrays for large area surface metrology and lithography, 90500W (14 April 2014); doi: 10.1117/12.2046348
X-Ray Scattering Methods
Proc. SPIE 9050, Nanometrology on gratings with GISAXS: FEM reconstruction and fourier analysis, 905012 (2 April 2014); doi: 10.1117/12.2046212
Overlay Measurement and Control: Joint Session with Conferences 9050 and 9052
Proc. SPIE 9050, Monitoring process-induced overlay errors through high-resolution wafer geometry measurements, 905013 (2 April 2014); doi: 10.1117/12.2046340
Proc. SPIE 9050, Investigation on reticle heating effect induced overlay error, 905014 (2 April 2014); doi: 10.1117/12.2048281
Proc. SPIE 9050, Compensating process non-uniformity to improve wafer overlay by RegC, 905015 (2 April 2014); doi: 10.1117/12.2048081
Inspection
Proc. SPIE 9050, Optical volumetric inspection of sub-20nm patterned defects with wafer noise, 905016 (2 April 2014); doi: 10.1117/12.2048231
Proc. SPIE 9050, 9nm node wafer defect inspection using visible light, 905017 (2 April 2014); doi: 10.1117/12.2046451
Proc. SPIE 9050, Highly effective and accurate weak point monitoring method for advanced design rule (1x nm) devices, 905018 (2 April 2014); doi: 10.1117/12.2046651
Proc. SPIE 9050, Real-time inspection system utilizing scatterometry pupil data, 905019 (2 April 2014); doi: 10.1117/12.2046518
Proc. SPIE 9050, New inspection technology for observing nanometer size defects using expansion soft template, 90501A (2 April 2014); doi: 10.1117/12.2046326
Proc. SPIE 9050, Parallel, miniaturized scanning probe microscope for defect inspection and review, 90501B (2 April 2014); doi: 10.1117/12.2045557
Proc. SPIE 9050, Computational techniques for determining printability of real defects in EUV mask pilot line, 90501C (2 April 2014); doi: 10.1117/12.2047306
Proc. SPIE 9050, Quantitative tabletop coherent diffraction imaging microscope for EUV lithography mask inspection, 90501D (2 April 2014); doi: 10.1117/12.2046526
Scatterometry and Optical Methods
Proc. SPIE 9050, Novel in-line metrology methods for Fin pitch walking monitoring in 14nm node and beyond, 90501E (2 April 2014); doi: 10.1117/12.2057402
Proc. SPIE 9050, Weak measurements applied to process monitoring using focused beam scatterometry, 90501F (2 April 2014); doi: 10.1117/12.2046528
Proc. SPIE 9050, Enhanced optical CD metrology by hybridization and azimuthal scatterometry, 90501G (2 April 2014); doi: 10.1117/12.2046165
Proc. SPIE 9050, High speed optical metrology solution for after etch process monitoring and control, 90501H (2 April 2014); doi: 10.1117/12.2047280
Proc. SPIE 9050, Visualization of Si surface and interface quality by non-contact optical characterization techniques, 90501I (2 April 2014); doi: 10.1117/12.2048242
Proc. SPIE 9050, Integrated ADI optical metrology solution for lithography process control of CD and OV, 90501J (2 April 2014); doi: 10.1117/12.2047205
Reference Metrology, Accuracy, Standards
Proc. SPIE 9050, Sidewall roughness and line profile measurement of photoresist and finFET features by cross-section STEM and TEM image for reference metrology, 90501K (2 April 2014); doi: 10.1117/12.2046144
Proc. SPIE 9050, Verification metrology system by using inline reference metrology, 90501L (2 April 2014); doi: 10.1117/12.2048686
Proc. SPIE 9050, Impact of shrinking measurement error budgets on qualification metrology sampling and cost, 90501M (2 April 2014); doi: 10.1117/12.2048933
Overlay
Proc. SPIE 9050, Innovative fast technique for overlay accuracy estimation using archer self calibration (ASC), 90501N (21 April 2014); doi: 10.1117/12.2046670
Proc. SPIE 9050, Real cell overlay measurement through design based metrology, 90501O (2 April 2014); doi: 10.1117/12.2046294
Proc. SPIE 9050, Integrated production overlay field-by-field control for leading edge technology nodes, 90501P (2 April 2014); doi: 10.1117/12.2046076
Proc. SPIE 9050, Mask contribution to intra-field wafer overlay, 90501Q (2 April 2014); doi: 10.1117/12.2049000
Late Breaking News
Proc. SPIE 9050, Innovative techniques for improving overlay accuracy by using DCM (device correlated metrology) targets as reference, 90501R (21 April 2014); doi: 10.1117/12.2046671
Proc. SPIE 9050, Overlay improvements using a real time machine learning algorithm, 90501S (2 April 2014); doi: 10.1117/12.2046914
Proc. SPIE 9050, Advanced CD-SEM metrology for pattern roughness and local placement of lamellar DSA, 90501T (2 April 2014); doi: 10.1117/12.2060924