Front Matter: Volume 9052
Proc. SPIE 9052, Front Matter: Volume 9052, 905201 (24 April 2014); doi: 10.1117/12.2066924
Optics and Beyond
Proc. SPIE 9052, The saga of sigma: influences of illumination throughout optical generations, 905204 (4 April 2014); doi: 10.1117/12.2048827
Proc. SPIE 9052, The impact of Mask 3D and Resist 3D effects in optical lithography, 905205 (31 March 2014); doi: 10.1117/12.2047279
Proc. SPIE 9052, Topographic and other effects on EUV pattern fidelity, 905206 (31 March 2014); doi: 10.1117/12.2047920
Image and Process Control
Proc. SPIE 9052, Advanced OPC Mask-3D and Resist-3D modeling , 905208 (31 March 2014); doi: 10.1117/12.2047281
Proc. SPIE 9052, Study of lens heating behavior and thick mask effects with a computational method, 905209 (31 March 2014); doi: 10.1117/12.2045366
Proc. SPIE 9052, Scanner performance predictor and optimizer in further low-k1 lithography, 90520A (31 March 2014); doi: 10.1117/12.2046547
Proc. SPIE 9052, Imaging control functions of optical scanners, 90520B (31 March 2014); doi: 10.1117/12.2046640
Proc. SPIE 9052, Experimental validation of rigorous, 3D profile models for negative-tone develop resists, 90520C (31 March 2014); doi: 10.1117/12.2046522
Proc. SPIE 9052, Wafer sub-layer impact in OPC/ORC models for advanced node implant layers, 90520D (31 March 2014); doi: 10.1117/12.2047115
Non-IC Applications
Proc. SPIE 9052, 193nm immersion lithography for high-performance silicon photonic circuits, 90520F (4 April 2014); doi: 10.1117/12.2049004
Proc. SPIE 9052, Lithographic process window optimization for mask aligner proximity lithography, 90520G (31 March 2014); doi: 10.1117/12.2046332
Proc. SPIE 9052, The solution to enhance i-line stepper applications by improving mix and match process overlay accuracy, 90520H (31 March 2014); doi: 10.1117/12.2046769
Proc. SPIE 9052, Built-in lens mask lithography, 90520I (31 March 2014); doi: 10.1117/12.2046060
OPC Algorithms
Proc. SPIE 9052, Automated sample plan selection for OPC modeling, 90520J (31 March 2014); doi: 10.1117/12.2045461
Proc. SPIE 9052, Shot overlap model-based fracturing for edge-based OPC layouts, 90520L (31 March 2014); doi: 10.1117/12.2046650
Proc. SPIE 9052, 11nm logic lithography with OPC-lite, 90520M (31 March 2014); doi: 10.1117/12.2045667
Proc. SPIE 9052, Model-based OPC using the MEEF matrix II, 90520N (31 March 2014); doi: 10.1117/12.2046635
Multiple Patterning and SMO
Proc. SPIE 9052, Immersion lithography extension to sub-10nm nodes with multiple patterning, 90520O (31 March 2014); doi: 10.1117/12.2046604
Proc. SPIE 9052, Hybrid lithography for triple patterning decomposition and E-beam lithography, 90520P (31 March 2014); doi: 10.1117/12.2046499
Proc. SPIE 9052, Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch, 90520Q (31 March 2014); doi: 10.1117/12.2046782
Proc. SPIE 9052, Pattern fidelity in multiple-patterning process, 90520R (31 March 2014); doi: 10.1117/12.2046643
Proc. SPIE 9052, Joint optimization of source, mask, and pupil in optical lithography, 90520S (31 March 2014); doi: 10.1117/12.2045739
Proc. SPIE 9052, Efficient source polarization optimization for robust optical lithography, 90520T (31 March 2014); doi: 10.1117/12.2045724
Overlay Measurement and Control: Joint Session with Conference 9050
Proc. SPIE 9052, Characterization and mitigation of overlay error on silicon wafers with nonuniform stress, 90520U (31 March 2014); doi: 10.1117/12.2045715
Proc. SPIE 9052, Analysis of overlay errors induced by exposure energy in negative tone development process for photolithography, 90520V (31 March 2014); doi: 10.1117/12.2046265
OPC Modeling
Proc. SPIE 9052, Hybrid OPC modeling with SEM contour technique for 10nm node process, 90520W (31 March 2014); doi: 10.1117/12.2047678
Proc. SPIE 9052, Improving 3D resist profile compact modeling by exploiting 3D resist physical mechanisms, 90520X (31 March 2014); doi: 10.1117/12.2048999
Proc. SPIE 9052, Resist profile simulation with fast lithography model, 90520Y (31 March 2014); doi: 10.1117/12.2045538
Proc. SPIE 9052, Modeling the lithography of ion implantation resists on topography, 90520Z (31 March 2014); doi: 10.1117/12.2046298
Pattern-Aware Techniques: Joint Session with Conference 9053
Proc. SPIE 9052, Fast detection of novel problematic patterns based on dictionary learning and prediction of their lithographic difficulty, 905211 (31 March 2014); doi: 10.1117/12.2045901
Proc. SPIE 9052, Pattern-based full-chip process verification, 905212 (31 March 2014); doi: 10.1117/12.2046045
Proc. SPIE 9052, Characterization of 1D layout technology at advanced nodes and low k1, 905213 (31 March 2014); doi: 10.1117/12.2046120
Mask Topography Modeling
Proc. SPIE 9052, Availability study of CFD-based Mask3D simulation method for next generation lithography technologies , 905215 (31 March 2014); doi: 10.1117/12.2046612
Proc. SPIE 9052, Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk, 905216 (31 March 2014); doi: 10.1117/12.2046489
Proc. SPIE 9052, Fixing the focus shift caused by 3D mask diffraction, 905217 (31 March 2014); doi: 10.1117/12.2045682
Proc. SPIE 9052, Impact of topographic mask models on scanner matching solutions, 905218 (31 March 2014); doi: 10.1117/12.2045919
DSA Design for Manufacturability: Joint Session with Conferences 9049 and 9053
Proc. SPIE 9052, Computational lithography platform for 193i-guided directed self-assembly, 90521A (31 March 2014); doi: 10.1117/12.2046920
Proc. SPIE 9052, Applying ILT mask synthesis for co-optimizing design rules and DSA process characteristics, 90521B (31 March 2014); doi: 10.1117/12.2046370
Proc. SPIE 9052, Rigorous simulation and optimization of the lithography/directed self-assembly co-process, 90521C (31 March 2014); doi: 10.1117/12.2047381
Toolings
Proc. SPIE 9052, Critical assessment of the transport of intensity equation as a phase recovery technique in optical lithography, 90521D (31 March 2014); doi: 10.1117/12.2048278
Proc. SPIE 9052, Extremely long life and low-cost 193nm excimer laser chamber technology for 450mm wafer multipatterning lithography, 90521E (4 April 2014); doi: 10.1117/12.2046189
Proc. SPIE 9052, Immersion scanners enabling 10nm half-pitch production and beyond, 90521F (31 March 2014); doi: 10.1117/12.2046238
Proc. SPIE 9052, Improvements in bandwidth and wavelength control for XLR 660xi systems, 90521H (31 March 2014); doi: 10.1117/12.2048305
Posters: Image Control
Proc. SPIE 9052, Estimation of 1D proximity budget impacts due to light source for advanced node design, 90521I (31 March 2014); doi: 10.1117/12.2047373
Proc. SPIE 9052, In situ aberration measurement method using a phase-shift ring mask, 90521J (31 March 2014); doi: 10.1117/12.2046257
Proc. SPIE 9052, A defocus measurement method for an in situ aberration measurement method using a phase-shift ring mask, 90521L (31 March 2014); doi: 10.1117/12.2046649
Proc. SPIE 9052, Alternative method for variable aspect ratio vias using a vortex mask, 90521M (31 March 2014); doi: 10.1117/12.2046495
Proc. SPIE 9052, Process window enhancement using advanced RET techniques for 20nm contact layer, 90521N (31 March 2014); doi: 10.1117/12.2048513
Proc. SPIE 9052, Mitigating mask roughness via pupil filtering, 90521O (31 March 2014); doi: 10.1117/12.2045668
Posters: Multiple Patterning
Proc. SPIE 9052, Understanding the critical challenges of self-aligned octuple patterning, 90521P (31 March 2014); doi: 10.1117/12.2046094
Proc. SPIE 9052, A generalized edge-placement yield model for the cut-hole patterning process, 90521Q (31 March 2014); doi: 10.1117/12.2046437
Proc. SPIE 9052, Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates, 90521R (31 March 2014); doi: 10.1117/12.2044900
Posters: Non-IC Applications
Proc. SPIE 9052, TCO less dye-sensitized solar cell lithographic methods for injecting the electrolyte, 90521S (31 March 2014); doi: 10.1117/12.2045546
Proc. SPIE 9052, UV-LED exposure system for low-cost photolithography, 90521T (31 March 2014); doi: 10.1117/12.2046123
Proc. SPIE 9052, Micro-optics: enabling technology for illumination shaping in optical lithography, 90521U (31 March 2014); doi: 10.1117/12.2046116