PROCEEDINGS VOLUME 9256
PHOTOMASK JAPAN 2014 | 15-16 APRIL 2014
Photomask and Next-Generation Lithography Mask Technology XXI
IN THIS VOLUME

0 Sessions, 33 Papers, 0 Presentations
FPD Masks  (1)
Metrology  (4)
EUVL Masks I  (3)
EUV  (4)
Repair  (1)
EDA and RET  (3)
PHOTOMASK JAPAN 2014
15-16 April 2014
Yokohama, Japan
Front Matter: Volume 9256
Proc. SPIE 9256, Front Matter: Volume 9256, 925601 (28 July 2014); doi: 10.1117/12.2074854
Invited Session
Inspection and Cleaning
Proc. SPIE 9256, Accurate mask model for advanced nodes, 925603 (28 July 2014); doi: 10.1117/12.2069977
Proc. SPIE 9256, Efficient ozone, sulfate, and ammonium free resist stripping process, 925604 (28 July 2014); doi: 10.1117/12.2070808
Proc. SPIE 9256, Evaluation of AIMS D2DB simulation without calibration images, 925605 (28 July 2014); doi: 10.1117/12.2070026
Writing Technologies
Proc. SPIE 9256, Challenges and technical requirements for multi-beam mask writer development, 925606 (28 July 2014); doi: 10.1117/12.2069731
Proc. SPIE 9256, EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond, 925607 (28 July 2014); doi: 10.1117/12.2065230
Proc. SPIE 9256, High performance mask fabrication process for the next-generation mask production , 925608 (28 July 2014); doi: 10.1117/12.2069651
Proc. SPIE 9256, Characterization of decay component of resist surface charging on EBM-8000, 925609 (28 July 2014); doi: 10.1117/12.2070827
Lithography Related Technologies
FPD Masks
Proc. SPIE 9256, Demands for Masks in 1.5μm Generation, 92560C (28 July 2014); doi: 10.1117/12.2065219
Metrology
Proc. SPIE 9256, Novel CD-SEM measurement methodology for complex OPCed patterns, 92560D (28 July 2014); doi: 10.1117/12.2069368
Proc. SPIE 9256, In-die registration measurement using novel model-based approach for advanced technology masks, 92560E (28 July 2014); doi: 10.1117/12.2070399
Proc. SPIE 9256, Proximity corrected accurate in-die registration metrology, 92560F (28 July 2014); doi: 10.1117/12.2072074
Proc. SPIE 9256, Three dimensional profile measurement using multi-channel detector MVM-SEM, 92560G (28 July 2014); doi: 10.1117/12.2064944
EUVL Masks I
Proc. SPIE 9256, EUV mask process specifics and development challenges , 92560H (28 July 2014); doi: 10.1117/12.2067145
Proc. SPIE 9256, Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling, 92560I (28 July 2014); doi: 10.1117/12.2069991
Proc. SPIE 9256, Extreme ultraviolet mask roughness: requirements, characterization, and modeling , 92560J (28 July 2014); doi: 10.1117/12.2070303
EUVL Masks II
Proc. SPIE 9256, Learning from native defects on EUV mask blanks, 92560K (28 July 2014); doi: 10.1117/12.2070871
EUVL Masks III
Proc. SPIE 9256, Towards reduced impact of EUV mask defectivity on wafer, 92560L (28 July 2014); doi: 10.1117/12.2070045
Proc. SPIE 9256, EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond, 92560M (28 July 2014); doi: 10.1117/12.2069723
Proc. SPIE 9256, Screening EUV mask absorbers for defect repair, 92560N (28 July 2014); doi: 10.1117/12.2070251
Proc. SPIE 9256, Defect analysis on actinic blank inspection tool, 92560O (28 July 2014); doi: 10.1117/12.2069197
Proc. SPIE 9256, Performance in practical use of actinic EUVL mask blank inspection, 92560P (28 July 2014); doi: 10.1117/12.2067566
EUV
Proc. SPIE 9256, Etched multilayer mask in EUV lithography for 16 nm node and below, 92560Q (28 July 2014); doi: 10.1117/12.2069404
Proc. SPIE 9256, Etched multilayer mask is better than conventional absorber mask, 92560R (28 July 2014); doi: 10.1117/12.2069885
Proc. SPIE 9256, Simulation of image placement error due to fabrication of black border on EUV mask, 92560S (28 July 2014); doi: 10.1117/12.2067965
Proc. SPIE 9256, Development of new inspection system with novel PEM for EUV pattern masks and its performance evaluation, 92560T (28 July 2014); doi: 10.1117/12.2069901
Repair
Proc. SPIE 9256, Application of EB repair for high durable MoSi PSM, 92560U (28 July 2014); doi: 10.1117/12.2070019
EDA and RET
Proc. SPIE 9256, Study of hotspot repair using cellular automata method, 92560V (28 July 2014); doi: 10.1117/12.2067112
Proc. SPIE 9256, Two new design methods for lithography mask: phase-shifting scattering bar and interlaced phase-shifting mask, 92560W (28 July 2014); doi: 10.1117/12.2065207
Proc. SPIE 9256, Use of ILT-based mask optimization for local printability enhancement, 92560X (28 July 2014); doi: 10.1117/12.2068493
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