PROCEEDINGS VOLUME 9363
SPIE OPTO | 7-12 FEBRUARY 2015
Gallium Nitride Materials and Devices X
Proceedings Volume 9363 is from: Logo
SPIE OPTO
7-12 February 2015
San Francisco, California, United States
Front Matter: Volume 9363
Proc. SPIE 9363, Front Matter: Volume 9363, 936301 (6 May 2015); doi: 10.1117/12.2193017
Growth I
Proc. SPIE 9363, Ammonothermal growth of polar and non-polar bulk GaN crystal, 936302 (13 March 2015); doi: 10.1117/12.2078137
Growth III
Proc. SPIE 9363, HVPE growth of AlXGa1-XN templates for UV-LED applications, 93630E (13 March 2015); doi: 10.1117/12.2079573
Proc. SPIE 9363, Homoepitaxial HVPE GaN growth on non- and semi-polar seeds, 93630F (13 March 2015); doi: 10.1117/12.2077929
Material Characterization I
Proc. SPIE 9363, Optical properties and band structure of highly doped gallium nitride, 93630G (13 March 2015); doi: 10.1117/12.2079379
Proc. SPIE 9363, Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs, 93630J (13 March 2015); doi: 10.1117/12.2076207
Proc. SPIE 9363, Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures, 93630K (13 March 2015); doi: 10.1117/12.2076208
Proc. SPIE 9363, Identification of point defects in HVPE-grown GaN by steady-state and time-resolved photoluminescence, 93630L (13 March 2015); doi: 10.1117/12.2077002
Proc. SPIE 9363, Study of interface state trap density on characteristics of MOS-HEMT, 93630M (13 March 2015); doi: 10.1117/12.2076678
Material Characterization II
Proc. SPIE 9363, Stress related aspects of GaN technology physics, 93630P (13 March 2015); doi: 10.1117/12.2074963
Nanostructures and Devices I
Proc. SPIE 9363, Photocathode electron beam sources using GaN and InGaN with NEA surface, 93630T (13 March 2015); doi: 10.1117/12.2076681
Proc. SPIE 9363, Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters, 93630U (13 March 2015); doi: 10.1117/12.2074898
Nanostructures and Devices II
Proc. SPIE 9363, Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates, 93630Z (13 March 2015); doi: 10.1117/12.2076284
Electron Devices I
Proc. SPIE 9363, Present and future of GaN power devices and their applications, 936310 (13 March 2015); doi: 10.1117/12.2076351
Proc. SPIE 9363, Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology, 936311 (13 March 2015); doi: 10.1117/12.2077806
Proc. SPIE 9363, Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation, 936312 (27 April 2015); doi: 10.1117/12.2076676
Proc. SPIE 9363, Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs, 936314 (13 March 2015); doi: 10.1117/12.2079586
Laser Diodes I
Proc. SPIE 9363, InGaN power laser chips in a novel 50W multi-die package, 936318 (13 March 2015); doi: 10.1117/12.2081065
Proc. SPIE 9363, Advances in single mode and high power AlGaInN laser diode technology for systems applications, 93631A (13 March 2015); doi: 10.1117/12.2076268
Proc. SPIE 9363, Ultralow threshold electrically injected AlGaN nanowire ultraviolet lasers on Si, 93631D (13 March 2015); doi: 10.1117/12.2080116
Laser Diodes II
Proc. SPIE 9363, Status and future of GaN-based vertical-cavity surface-emitting lasers, 93631G (13 March 2015); doi: 10.1117/12.2079503
LEDs I
Proc. SPIE 9363, Progress of high-power deep-ultraviolet LEDs, 93631L (13 March 2015); doi: 10.1117/12.2078620
Proc. SPIE 9363, High-efficiency UV LEDs on sapphire, 93631M (13 March 2015); doi: 10.1117/12.2079874
Proc. SPIE 9363, Current spreading in UV-C LEDs emitting at 235 nm, 93631P (13 March 2015); doi: 10.1117/12.2076349
LEDs II
Proc. SPIE 9363, Study of efficiency droop in InGaN/GaN light emitting diodes with V-shape pits, 93631Q (13 March 2015); doi: 10.1117/12.2078122
Proc. SPIE 9363, Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes, 93631R (13 March 2015); doi: 10.1117/12.2078803
Proc. SPIE 9363, Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs, 93631S (13 March 2015); doi: 10.1117/12.2078927
LEDs III
Proc. SPIE 9363, Semi/non-polar nitride quantum wells for high-efficient light emitters, 93631T (13 March 2015); doi: 10.1117/12.2078873
Proc. SPIE 9363, Spatial variations of optical properties of semipolar InGaN quantum wells, 93631U (13 March 2015); doi: 10.1117/12.2076973
Proc. SPIE 9363, Investigation of facet-dependent InGaN growth for core-shell LEDs, 93631V (13 March 2015); doi: 10.1117/12.2077625
LEDs IV
Proc. SPIE 9363, InGaN LEDs prepared on beta-Ga2O3 (-201) substrates, 93631Z (27 April 2015); doi: 10.1117/12.2076114
Poster Session
Proc. SPIE 9363, Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles, 936325 (13 March 2015); doi: 10.1117/12.2077438
Proc. SPIE 9363, X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD, 936328 (13 March 2015); doi: 10.1117/12.2077513
Proc. SPIE 9363, Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure, 93632A (13 March 2015); doi: 10.1117/12.2077549
Proc. SPIE 9363, Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes, 93632B (13 March 2015); doi: 10.1117/12.2077946
Proc. SPIE 9363, Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques, 93632H (13 March 2015); doi: 10.1117/12.2078970
Proc. SPIE 9363, Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers, 93632I (13 March 2015); doi: 10.1117/12.2079180
Proc. SPIE 9363, Enhancement of coherent acoustic phonons in InGaN multiple quantum wells, 93632J (13 March 2015); doi: 10.1117/12.2079245
Proc. SPIE 9363, Strong carrier localization in stacking faults in semipolar (11-22) GaN, 93632N (13 March 2015); doi: 10.1117/12.2080248
Proc. SPIE 9363, Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates, 93632O (13 March 2015); doi: 10.1117/12.2080265
Proc. SPIE 9363, Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes, 93632P (13 March 2015); doi: 10.1117/12.2080325
Proc. SPIE 9363, Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients, 93632U (13 March 2015); doi: 10.1117/12.2179637
Back to Top