Novel In-Plane Semiconductor Lasers XIV
Proceedings Volume 9382 is from: Logo
7-12 February 2015
San Francisco, California, United States
Front Matter: Volume 9382
Proc. SPIE 9382, Front Matter: Volume 9382, 938201 (22 April 2015);
Comms: Materials to Devices
Proc. SPIE 9382, 10Gb/s direct modulation of widely tunable V-cavity-laser with chirp managed laser technology, 938205 (10 March 2015);
Proc. SPIE 9382, Low-chirp QD-based directly modulated lasers monolithically integrated with a ring resonator for long-range access network, 938206 (10 March 2015);
Proc. SPIE 9382, III-Nitride high temperature single-photon sources, 938207 (10 March 2015);
Quantum Dots and Mode-Locking
Proc. SPIE 9382, The role of optical delays for the dynamic behavior of passively mode-locked lasers, 93820B (10 March 2015);
Proc. SPIE 9382, Optical bandwidth broadening in two-section passively mode-locked InAs quantum dot lasers in the random population regime, 93820C (10 March 2015);
Proc. SPIE 9382, Ultrashort pulse generation with semiconductor lasers using intracavity phase- and amplitude pulse shaping, 93820D (10 March 2015);
Proc. SPIE 9382, Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers, 93820F (10 March 2015);
Novel Structures
Proc. SPIE 9382, Dynamic characteristics of double tunneling-injection quantum dot lasers, 93820H (10 March 2015);
Proc. SPIE 9382, Effects of temperature and difference-wavelength on mode stability in dual-λ QD lasers, 93820J (10 March 2015);
Narrow Linewidth
Proc. SPIE 9382, Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks, 93820L (10 March 2015);
Proc. SPIE 9382, DBR grating stabilized ridge waveguide lasers emitting at 647 nm for real 3D holographic displays, 93820M (10 March 2015);
Proc. SPIE 9382, Theory and observation on non-linear effects limiting the coherence properties of high-Q hybrid Si/III-V lasers, 93820N (10 March 2015);
Proc. SPIE 9382, Thermally tunable integrated planar Bragg-grating stabilized diode laser, 93820O (10 March 2015);
Proc. SPIE 9382, 400mW output power at 445 nm with narrowband emission from an external cavity diode laser system, 93820P (20 March 2015);
Lasers on Silicon
Proc. SPIE 9382, Heterogenously-integrated InP on Si microdisk lasers, 93820Q (10 March 2015);
Proc. SPIE 9382, A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon, 93820R (10 March 2015);
Mid-Infrared Lasers
Proc. SPIE 9382, InP-based type-II heterostructure lasers for wavelengths up to 2.7 um, 93820U (10 March 2015);
Proc. SPIE 9382, Distributed feedback interband cascade lasers for applications in research and industry, 93820V (10 March 2015);
Proc. SPIE 9382, Type-I QW cascade diode lasers with 830 mW of CW power at 3 µm, 93820X (10 March 2015);
Quantum Cascade Lasers
Proc. SPIE 9382, Experimental investigation of intensity noise in injection locked mid-infrared quantum cascade lasers, 938210 (10 March 2015);
QCLs, Plasmonics, and Metamaterials
Proc. SPIE 9382, Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers, 938213 (10 March 2015);
Proc. SPIE 9382, Nonlinear optics with quantum-engineered intersubband metamaterials, 938216 (10 March 2015);
Terahertz Lasers
Proc. SPIE 9382, Recent progress and future prospects of THz quantum-cascade lasers, 938217 (10 March 2015);
Proc. SPIE 9382, Recent advances in the research toward graphene-based terahertz lasers, 938219 (10 March 2015);
Novel Cavity Structures
Proc. SPIE 9382, Waveguide and photonic crystal design of photonic crystal surface-emitting laser, 93821A (10 March 2015);
Proc. SPIE 9382, 785-nm dual wavelength DBR diode lasers and MOPA systems with output powers up to 750 mW, 93821B (10 March 2015);
Proc. SPIE 9382, Demonstration of continuous-wave microsquare lasers and comparison to microdisk laser, 93821D (10 March 2015);
High Brightness
Proc. SPIE 9382, Short-wavelength infrared defect emission as probe for degradation effects in diode lasers, 93821G (10 March 2015);
Proc. SPIE 9382, Numerical simulation and optimization of microstructured high brightness broad area laser diodes, 93821H (10 March 2015);
Proc. SPIE 9382, Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier, 93821I (10 March 2015);
Proc. SPIE 9382, New approach for high-peak power lasing based on epitaxially integrated AlGaAs/GaAs laser-thyristor heterostructure, 93821J (10 March 2015);
Proc. SPIE 9382, 975nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications, 93821K (10 March 2015);
QCLs and Applications
Proc. SPIE 9382, Above-threshold numerical modeling of high-index-contrast photonic-crystal quantum cascade lasers, 93821L (10 March 2015);
Proc. SPIE 9382, Characterization of an InGaAs/InP-based Echelle mirror multiplexer for widely-tunable mid-IR sources based on quantum cascade lasers, 93821O (10 March 2015);
Proc. SPIE 9382, Destructive physical analysis of degraded quantum cascade lasers, 93821P (10 March 2015);
Poster Session
Proc. SPIE 9382, Improved efficiency in room temperature >3µm diodes using highly strained quantum wells, 93821Q (10 March 2015);
Proc. SPIE 9382, Electrical diagnositics of quantum cascade lasers, 93821R (10 March 2015);
Proc. SPIE 9382, Dynamic and static concept of laser-thyristor for high-peak power lasing, 93821S (10 March 2015);
Proc. SPIE 9382, A ZnSe/BeTe p-grading superlattice with a low voltage drop for efficient hole injection in green-yellow BeZnCdSe quantum well laser, 93821T (10 March 2015);
Proc. SPIE 9382, Selective and tunable red- or blue-shift emissions of GaAsP quantum well heterostructures, 93821U (10 March 2015);
Proc. SPIE 9382, Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser, 93821V (10 March 2015);
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