Front Matter Vol. 9424
Proc. SPIE 9424, Front Matter: Volume 9424, 942401 (24 April 2015); doi: 10.1117/12.2192299
Characterization of Feature Profile and LER
Proc. SPIE 9424, More systematic errors in the measurement of power spectral density, 942403 (19 March 2015); doi: 10.1117/12.2085025
Proc. SPIE 9424, Application of frequency domain line edge roughness characterization methodology in lithography, 942404 (19 March 2015); doi: 10.1117/12.2086961
Proc. SPIE 9424, The effect of sidewall roughness on line edge roughness in top-down scanning electron microscopy images, 942405 (17 March 2015); doi: 10.1117/12.2085768
Proc. SPIE 9424, Line profile measurement of advanced-FinFET features by reference metrology, 942406 (19 March 2015); doi: 10.1117/12.2087099
Proc. SPIE 9424, Induced e-beam charge impact on spatial orientation of gate-all-around silicon wires device fabricated on boron nitride substrate, 942407 (10 April 2015); doi: 10.1117/12.2086104
Overlay Metrology
Proc. SPIE 9424, Hybrid overlay metrology with CDSEM in a BEOL patterning scheme, 942408 (19 March 2015); doi: 10.1117/12.2087116
Proc. SPIE 9424, Scatterometry or imaging overlay: a comparative study, 942409 (19 March 2015); doi: 10.1117/12.2085950
Proc. SPIE 9424, 64nm pitch metal1 double patterning metrology: CD and OVL control by SEMCD, image based overlay and diffraction based overlay, 94240A (10 April 2015); doi: 10.1117/12.2085757
Proc. SPIE 9424, Influence of the process-induced asymmetry on the accuracy of overlay measurements, 94240B (19 March 2015); doi: 10.1117/12.2085788
Proc. SPIE 9424, Overlay accuracy investigation for advanced memory device, 94240C (19 March 2015); doi: 10.1117/12.2085270
Proc. SPIE 9424, Stack and topography verification as an enabler for computational metrology target design, 94240D (10 April 2015); doi: 10.1117/12.2086084
Proc. SPIE 9424, Overlay metrology solutions in a triple patterning scheme, 94240E (24 March 2015); doi: 10.1117/12.2087304
SEM Metrology and Modeling
Proc. SPIE 9424, Analytical linescan model for SEM metrology, 94240F (19 March 2015); doi: 10.1117/12.2086119
Proc. SPIE 9424, Solving next generation (1x node) metrology challenges using advanced CDSEM capabilities: tilt, high energy and backscatter imaging, 94240G (19 March 2015); doi: 10.1117/12.2087267
Proc. SPIE 9424, Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography, 94240H (19 March 2015); doi: 10.1117/12.2175841
Proc. SPIE 9424, Fast analytical modeling of SEM images at a high level of accuracy, 94240I (19 March 2015); doi: 10.1117/12.2086072
Proc. SPIE 9424, Simulating massively parallel electron beam inspection for sub-20 nm defects, 94240J (19 March 2015); doi: 10.1117/12.2175573
Proc. SPIE 9424, Investigating SEM metrology effects using a detailed SEM simulation and stochastic resist model, 94240K (19 March 2015); doi: 10.1117/12.2086051
Wafer Geometry and Topography Effects on Process Control
Proc. SPIE 9424, Effect of wafer geometry on lithography chucking processes, 94240L (19 March 2015); doi: 10.1117/12.2085693
Proc. SPIE 9424, Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices, 94240M (19 March 2015); doi: 10.1117/12.2085862
Proc. SPIE 9424, Lithography overlay control improvement using patterned wafer geometry for sub-22nm technology nodes, 94240N (19 March 2015); doi: 10.1117/12.2086525
AFM
Proc. SPIE 9424, Demonstration of parallel scanning probe microscope for high throughput metrology and inspection, 94240O (19 March 2015); doi: 10.1117/12.2085495
Proc. SPIE 9424, Self-actuated, self-sensing cantilever for fast CD measurement, 94240P (19 March 2015); doi: 10.1117/12.2085760
Proc. SPIE 9424, High-speed AFM for 1x node metrology and inspection: Does it damage the features?, 94240Q (19 March 2015); doi: 10.1117/12.2085668
Proc. SPIE 9424, Multiple height calibration reference for nano-metrology, 94240R (19 March 2015); doi: 10.1117/12.2085502
Proc. SPIE 9424, Development of a comprehensive metrology platform dedicated to dimensional measurements of CD atomic force microscopy tips, 94240S (19 March 2015); doi: 10.1117/12.2085977
Metrology and Inspection for Directed Self-Assembly: Joint Session with Conferences 9423 and 9424
Proc. SPIE 9424, Optical CD metrology for directed self-assembly assisted contact hole shrink process, 94240T (19 March 2015); doi: 10.1117/12.2085054
Proc. SPIE 9424, Metrology of DSA process using TEM tomography, 94240U (19 March 2015); doi: 10.1117/12.2085577
Scatterometry
Proc. SPIE 9424, Improved scatterometry time-to-solution using virtual reference, 94240X (19 March 2015); doi: 10.1117/12.2087232
Proc. SPIE 9424, Data refinement for robust solution to the inverse problem in optical scatterometry, 94240Y (19 March 2015); doi: 10.1117/12.2086058
Proc. SPIE 9424, Hp-finite element method for simulating light scattering from complex 3D structures, 94240Z (19 March 2015); doi: 10.1117/12.2085795
Proc. SPIE 9424, Scatterometry-based metrology for the 14nm node double patterning lithography, 942410 (19 March 2015); doi: 10.1117/12.2085775
Proc. SPIE 9424, Scatterometric analysis of a plasmonic test structure, 942411 (19 March 2015); doi: 10.1117/12.2085933
Device Overlay
Proc. SPIE 9424, Target design optimization for overlay scatterometry to improve on-product overlay, 942412 (19 March 2015); doi: 10.1117/12.2085642
Proc. SPIE 9424, Overlay improvement by exposure map based mask registration optimization, 942413 (19 March 2015); doi: 10.1117/12.2084958
Proc. SPIE 9424, Improving full-wafer on-product overlay using computationally designed process-robust and device-like metrology targets, 942414 (19 March 2015); doi: 10.1117/12.2085645
Proc. SPIE 9424, Advanced overlay analysis through design based metrology, 942415 (19 March 2015); doi: 10.1117/12.2085464
Inspection
Proc. SPIE 9424, 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source, 942416 (19 March 2015); doi: 10.1117/12.2085683
Proc. SPIE 9424, Mechanical and thermal properties of nanomaterials at sub-50nm dimensions characterized using coherent EUV beams, 942417 (19 March 2015); doi: 10.1117/12.2085615
Proc. SPIE 9424, Spectral emission properties of a LPP light source in the sub-200nm range for wafer inspection applications , 942418 (19 March 2015); doi: 10.1117/12.2085806
Proc. SPIE 9424, Scatterometry-based defect detection for DSA in-line process control, 942419 (19 March 2015); doi: 10.1117/12.2087093
Proc. SPIE 9424, Simulation of AIMS measurements using rigorous mask 3D modeling, 94241A (19 March 2015); doi: 10.1117/12.2085113
Design Interaction with Metrology: Joint Session with Conferences 9424 and 9427
Proc. SPIE 9424, A new paradigm for in-line detection and control of patterning defects, 94241B (19 March 2015); doi: 10.1117/12.2087178
Proc. SPIE 9424, Predictability and impact of product layout induced topology on across-field focus control, 94241C (19 March 2015); doi: 10.1117/12.2085283
Proc. SPIE 9424, The analysis method of the DRAM cell pattern hotspot, 94241D (19 March 2015); doi: 10.1117/12.2084992
Hybrid Metrology and Process Control
Proc. SPIE 9424, Holistic approach using accuracy of diffraction-based integrated metrology to improve on-product performance, reduce cycle time, and cost at litho, 94241E (19 March 2015); doi: 10.1117/12.2085678
Proc. SPIE 9424, Intra-field patterning control using high-speed and small-target optical metrology of CD and focus, 94241F (19 March 2015); doi: 10.1117/12.2085957
Proc. SPIE 9424, Comprehensive BEOL control using scatterometry and APC, 94241G (19 March 2015); doi: 10.1117/12.2087320
Proc. SPIE 9424, Hybrid metrology implementation: server approach, 94241H (19 March 2015); doi: 10.1117/12.2087233
Proc. SPIE 9424, Machine learning and predictive data analytics enabling metrology and process control in IC fabrication, 94241I (19 March 2015); doi: 10.1117/12.2087406
Proc. SPIE 9424, Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression, 94241J (19 March 2015); doi: 10.1117/12.2175653
Overlay Optimization: Joint Session with Conferences 9424 and 9426
Proc. SPIE 9424, Intra-field on-product overlay improvement by application of RegC and TWINSCAN corrections, 94241K (19 March 2015); doi: 10.1117/12.2085651
Proc. SPIE 9424, Pattern recognition and data mining techniques to identify factors in wafer processing and control determining overlay error, 94241L (19 March 2015); doi: 10.1117/12.2085497
X-ray and Novel Optical Methods
Proc. SPIE 9424, Hybridization of XRF/XPS and scatterometry for Cu CMP process control, 94241M (19 March 2015); doi: 10.1117/12.2086155