Front Matter: Volume 9425
Proc. SPIE 9425, Front Matter: Volume 9425, 942501 (20 March 2015); doi: 10.1117/12.2193847
Keynote Session
Proc. SPIE 9425, Recent progress on multipatterning: approach to pattern placement correction, 942502 (20 March 2015); doi: 10.1117/12.2087003
EUV Resist Extendability: Joint Session with Conferences 9422 and 9425
Proc. SPIE 9425, Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography, 942504 (20 March 2015); doi: 10.1117/12.2085672
Proc. SPIE 9425, Recent progress of negative-tone imaging with EUV exposure, 942505 (20 March 2015); doi: 10.1117/12.2085706
EUV Resist Mechanistic Studies: Joint Session with Conferences 9422 and 9425
Proc. SPIE 9425, The effect of resist dissolution process on pattern formation variability: an in situ analysis using high-speed atomic force microscopy, 942506 (20 March 2015); doi: 10.1117/12.2085746
Proc. SPIE 9425, XAS photoresists electron/quantum yields study with synchrotron light, 942507 (20 March 2015); doi: 10.1117/12.2085951
Proc. SPIE 9425, Inhomogeneity of PAGs in a hybrid-type EUV resist system studied by molecular-dynamics simulations for EUV lithography, 942508 (20 March 2015); doi: 10.1117/12.2085691
Negative Tone Materials
Proc. SPIE 9425, Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography, 942509 (20 March 2015); doi: 10.1117/12.2085744
Proc. SPIE 9425, Optimizing performance in cross-linking negative-tone molecular resists, 94250A (20 March 2015); doi: 10.1117/12.2086007
Proc. SPIE 9425, Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node, 94250B (20 March 2015); doi: 10.1117/12.2087546
Proc. SPIE 9425, Effect of molecular resist structure on glass transition temperature and lithographic performance in epoxide functionalized negative tone resists, 94250C (20 March 2015); doi: 10.1117/12.2086027
Resist and Process Fundamentals
Proc. SPIE 9425, Total fidelity management in self-aligned multiple patterning process, 94250D (20 March 2015); doi: 10.1117/12.2085765
Proc. SPIE 9425, Effects of the statistical fluctuation of PAG and quencher on LWR of ArF resists, 94250F (20 March 2015); doi: 10.1117/12.2085751
Proc. SPIE 9425, Fundamental study of spin-coating using in-situ analysis and simulation, 94250G (20 March 2015); doi: 10.1117/12.2085277
Proc. SPIE 9425, Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives, 94250I (20 March 2015); doi: 10.1117/12.2086045
Patterning Materials and Etch: Joint Session with Conferences 9425 and 9428
Proc. SPIE 9425, Understanding the efficacy of linewidth roughness post-processing, 94250J (20 March 2015); doi: 10.1117/12.2085047
Materials and Etch in Emerging Technologies: Joint Session with Conferences 9425 and 9428
Proc. SPIE 9425, Influence of etch process on contact hole local critical dimension uniformity in extreme-ultraviolet lithography, 94250K (20 March 2015); doi: 10.1117/12.2085722
Proc. SPIE 9425, Organic hard masks utilizing fullerene derivatives, 94250L (20 March 2015); doi: 10.1117/12.2085675
Proc. SPIE 9425, Impact of sequential infiltration synthesis on pattern fidelity of DSA lines, 94250N (20 March 2015); doi: 10.1117/12.2086091
DSA Materials and Processes I: Joint Session with Conferences 9425 and 9423
Proc. SPIE 9425, Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch , 94250O (20 March 2015); doi: 10.1117/12.2086094
DSA Materials and Processes II: Joint Session with Conferences 9425 and 9423
Proc. SPIE 9425, Directed self-assembly process integration: fin patterning approaches and challenges, 94250R (20 March 2015); doi: 10.1117/12.2087318
EUV Resists and Processes
Proc. SPIE 9425, Integrated fab process for metal oxide EUV photoresist, 94250S (20 March 2015); doi: 10.1117/12.2086006
Proc. SPIE 9425, High-sensitivity molecular organometallic resist for EUV (MORE), 94250T (20 March 2015); doi: 10.1117/12.2086599
Proc. SPIE 9425, Development of EUV chemically amplified resist which has novel protecting group, 94250U (20 March 2015); doi: 10.1117/12.2087197
DSA Materials and New Concepts
Proc. SPIE 9425, The role of guide stripe chemistry in block copolymer directed self-assembly, 94250W (20 March 2015); doi: 10.1117/12.2085905
Proc. SPIE 9425, Patterning sub-25nm half-pitch hexagonal arrays of contact holes with chemo-epitaxial DSA guided by ArFi pre-patterns, 94250X (20 March 2015); doi: 10.1117/12.2086352
Proc. SPIE 9425, DSA graphoepitaxy calibrations for contact hole multiplication, 94250Y (20 March 2015); doi: 10.1117/12.2086137
Proc. SPIE 9425, Development and integration of systems with enhanced resolutions based on Si-containing block copolymers for line space applications, 94250Z (20 March 2015); doi: 10.1117/12.2085721
Proc. SPIE 9425, Analysis of the self-assembling and the defect annihilation processes in DSA using meso-scale simulation, 942510 (20 March 2015); doi: 10.1117/12.2085650
New Patterning Processes
Proc. SPIE 9425, Dry development rinse (DDR) process and material for ArF/EUV extension technique toward 1Xnm hp and beyond, 942512 (20 March 2015); doi: 10.1117/12.2085742
Proc. SPIE 9425, Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist, 942513 (20 March 2015); doi: 10.1117/12.2085791
Proc. SPIE 9425, Sustainability and applicability of spacer-related patterning towards 7nm node, 942514 (20 March 2015); doi: 10.1117/12.2085730
Proc. SPIE 9425, Dry development rinse process for ultimate resolution improvement via pattern collapse mitigation, 942516 (20 March 2015); doi: 10.1117/12.2086486
Proc. SPIE 9425, Block co-polymer approach for CD uniformity and placement error improvement in DSA hole grapho-epitaxy process, 942517 (20 March 2015); doi: 10.1117/12.2087009
Materials and Process Engineering
Proc. SPIE 9425, Progress in spin-on metal oxide hardmask materials for filling applications, 942518 (20 March 2015); doi: 10.1117/12.2085811
Proc. SPIE 9425, Aqueous-based thick photoresist removal for bumping applications, 942519 (20 March 2015); doi: 10.1117/12.2175826
Proc. SPIE 9425, Coater/developer process integration of metal-oxide based photoresist, 94251A (20 March 2015); doi: 10.1117/12.2085982
Proc. SPIE 9425, Directly patternable dielectric based on fluorinated polyimide, 94251D (20 March 2015); doi: 10.1117/12.2085793
Posters: Materials Fundamentals
Proc. SPIE 9425, Studying the mechanism of hybrid nanoparticle EUV photoresists, 94251E (20 March 2015); doi: 10.1117/12.2085662
Proc. SPIE 9425, Measurement of acid diffusion from PAG in photoresists by using TOF-SIMS with GCIB, 94251H (20 March 2015); doi: 10.1117/12.2085814
Proc. SPIE 9425, The effect of resist material composition on development behavior, 94251I (20 March 2015); doi: 10.1117/12.2085820
Proc. SPIE 9425, Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography, 94251J (20 March 2015); doi: 10.1117/12.2185599
Posters: New Materials
Proc. SPIE 9425, Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL, 94251L (20 March 2015); doi: 10.1117/12.2085470
Proc. SPIE 9425, Light-scattering thermal cross-linking material using morphology of nanoparticle free polymer blends, 94251M (20 March 2015); doi: 10.1117/12.2081825
Proc. SPIE 9425, Blending approaches to enhance structural order in block-copolymer's self-assemblies, 94251N (20 March 2015); doi: 10.1117/12.2085821
Proc. SPIE 9425, High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography, 94251P (20 March 2015); doi: 10.1117/12.2081829
Proc. SPIE 9425, Aromatizing unzipping polyester for EUV photoresist, 94251Q (20 March 2015); doi: 10.1117/12.2085780
Proc. SPIE 9425, Evaluation of novel lactone derivatives for chemically amplified EUV resists, 94251R (20 March 2015); doi: 10.1117/12.2083755
Proc. SPIE 9425, Base developable negative tone molecular resist based on epoxide cross-linking, 94251S (20 March 2015); doi: 10.1117/12.2086039
Proc. SPIE 9425, Top-coatless 193nm positive-tone development immersion resist for logic application, 94251T (20 March 2015); doi: 10.1117/12.2086348
Posters: New Patterning Applications
Proc. SPIE 9425, Nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency , 94251V (20 March 2015); doi: 10.1117/12.2081820
Proc. SPIE 9425, Development of spin-on metal hardmask (SOMHM) for advanced node, 94251X (20 March 2015); doi: 10.1117/12.2086005
Posters: Processing