Front Matter: Volume 9426
Proc. SPIE 9426, Front Matter: Volume 9426, 942601 (24 April 2015); doi: 10.1117/12.2193695
Keynote Session
Proc. SPIE 9426, Optical lithography with and without NGL for single-digit nanometer nodes, 942602 (18 March 2015); doi: 10.1117/12.2087008
Pushing Optical Limit
Proc. SPIE 9426, Evolving optical lithography without EUV, 942604 (26 March 2015); doi: 10.1117/12.2086357
Proc. SPIE 9426, Mask 3D induced phase and the mitigation by absorber optimization, 942605 (18 March 2015); doi: 10.1117/12.2178288
Proc. SPIE 9426, Patterning process exploration of metal 1 layer in 7nm node with 3D patterning flow simulations , 942606 (18 March 2015); doi: 10.1117/12.2085328
Image and Process Control
Proc. SPIE 9426, Impact of bandwidth on contrast sensitive structures for low k1 lithography, 942607 (18 March 2015); doi: 10.1117/12.2085826
Proc. SPIE 9426, Solution for high-order distortion on extreme illumination condition using computational prediction method, 942608 (18 March 2015); doi: 10.1117/12.2086938
Proc. SPIE 9426, Optimum ArFi laser bandwidth for 10nm node logic imaging performance, 942609 (18 March 2015); doi: 10.1117/12.2085823
Proc. SPIE 9426, Single lithography exposure edge placement model, 94260B (18 March 2015); doi: 10.1117/12.2086428
Non-IC Applications
Proc. SPIE 9426, Multicolor, visible-light nanolithography, 94260C (18 March 2015); doi: 10.1117/12.2087107
Proc. SPIE 9426, Progresses in 300mm DUV photolithography for the development of advanced silicon photonic devices, 94260D (18 March 2015); doi: 10.1117/12.2085800
Proc. SPIE 9426, Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography, 94260E (18 March 2015); doi: 10.1117/12.2085777
Proc. SPIE 9426, Optimization methods for 3D lithography process utilizing DMD-based maskless grayscale photolithography system, 94260F (18 March 2015); doi: 10.1117/12.2084486
Mask Topography: Joint Session with Conferences 9422 and 9426
Proc. SPIE 9426, Mask-induced best-focus-shifts in DUV and EUV lithography, 94260H (18 March 2015); doi: 10.1117/12.2086346
Proc. SPIE 9426, Intensity and phase fields behind Phase Shifting Masks studied with High Resolution Interference Microscopy, 94260I (18 March 2015); doi: 10.1117/12.2085804
Multiple Patterning and SMO
Proc. SPIE 9426, Study of cut mask lithography options for sub-20nm metal routing, 94260J (18 March 2015); doi: 10.1117/12.2085716
Proc. SPIE 9426, Inverse lithography using sparse mask representations, 94260K (18 March 2015); doi: 10.1117/12.2085762
Proc. SPIE 9426, RET selection on state-of-the-art NAND flash, 94260L (18 March 2015); doi: 10.1117/12.2087176
Proc. SPIE 9426, Pixel-based ant colony algorithm for source mask optimization, 94260M (18 March 2015); doi: 10.1117/12.2085525
Proc. SPIE 9426, Low-contrast photoresist development model for OPC application at 10nm node, 94260N (18 March 2015); doi: 10.1117/12.2086044
Mask and Wafer Topography Modeling
Proc. SPIE 9426, Characterizing the dependence of thick-mask edge effects on illumination angle using AIMS images, 94260O (26 March 2015); doi: 10.1117/12.2087615
Proc. SPIE 9426, Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners, 94260P (18 March 2015); doi: 10.1117/12.2085671
Proc. SPIE 9426, A pattern- and optics-independent compact model of Mask3D under off-axis illumination with significant efficiency and accuracy improvements, 94260Q (26 March 2015); doi: 10.1117/12.2086046
Proc. SPIE 9426, Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies, 94260R (18 March 2015); doi: 10.1117/12.2087322
Proc. SPIE 9426, Rigorous wafer topography simulation for investigating wafer alignment quality and robustness, 94260S (26 March 2015); doi: 10.1117/12.2086075
OPC and Modeling
Proc. SPIE 9426, Investigating deprotection-induced shrinkage and retro-grade sidewalls in NTD resists, 94260T (18 March 2015); doi: 10.1117/12.2087376
Proc. SPIE 9426, Alternative to ILT method for high-quality full-chip SRAF insertion, 94260U (18 March 2015); doi: 10.1117/12.2085724
Proc. SPIE 9426, Uncertainty aware site selection method for OPC model calibration, 94260V (18 March 2015); doi: 10.1117/12.2085541
Proc. SPIE 9426, Experiments using automated sample plan selection for OPC modeling, 94260W (18 March 2015); doi: 10.1117/12.2086049
Proc. SPIE 9426, Optical proximity correction with hierarchical Bayes model, 94260X (18 March 2015); doi: 10.1117/12.2085787
Proc. SPIE 9426, Application of SEM-based contours for OPC model weighting and sample plan reduction, 94260Y (31 March 2015); doi: 10.1117/12.2176406
DFM (Design and Litho Optimization): Joint Session with Conferences 9426 and 9427
Proc. SPIE 9426, Hot spots prediction after etching process based on defect rate, 942610 (26 March 2015); doi: 10.1117/12.2085726
Proc. SPIE 9426, Hybrid OPC flow with pattern search and replacement, 942611 (18 March 2015); doi: 10.1117/12.2087094
Overlay Optimization: Joint Session with Conferences 9424 and 9426
Proc. SPIE 9426, Overlay improvement methods with diffraction based overlay and integrated metrology, 942612 (18 March 2015); doi: 10.1117/12.2087196
Proc. SPIE 9426, Intra-field overlay correction for illumination based distortion, 942613 (18 March 2015); doi: 10.1117/12.2085887
Proc. SPIE 9426, Wafer to wafer overlay control algorithm implementation based on statistics, 942614 (26 March 2015); doi: 10.1117/12.2086936
Toolings
Proc. SPIE 9426, Immersion and dry scanner extensions for sub-10nm production nodes, 942616 (18 March 2015); doi: 10.1117/12.2087112
Proc. SPIE 9426, Latest performance of ArF immersion scanner NSR-S630D for high-volume manufacturing for 7nm node, 942617 (18 March 2015); doi: 10.1117/12.2085735
Proc. SPIE 9426, New ArF immersion light source introduces technologies for high-volume 14nm manufacturing and beyond, 942618 (18 March 2015); doi: 10.1117/12.2085968
Proc. SPIE 9426, Total lithography system based on a new application software platform enabling smart scanner management, 942619 (18 March 2015); doi: 10.1117/12.2085689
Proc. SPIE 9426, Green solution: 120W ArF immersion light source supporting the next-generation multiple-pattering lithography, 94261A (18 March 2015); doi: 10.1117/12.2085006
Posters: Image and Process Control
Proc. SPIE 9426, Comparing the experimental resist image with aerial image intensity in high-NA projection lense, 94261C (18 March 2015); doi: 10.1117/12.2085454
Proc. SPIE 9426, Advanced process characterization using light source performance modulation and monitoring, 94261D (18 March 2015); doi: 10.1117/12.2085838
Proc. SPIE 9426, Analytical analysis for impact of polarization aberration of projection lens on lithographic imaging quality, 94261E (18 March 2015); doi: 10.1117/12.2181336
Posters: Mask and Wafer Topography
Proc. SPIE 9426, Reducing the substrate dependent scanner leveling effect in low-k1 contact printing, 94261F (18 March 2015); doi: 10.1117/12.2083811
Proc. SPIE 9426, A fast and flexible library-based thick-mask near-field calculation method, 94261G (18 March 2015); doi: 10.1117/12.2085010
Proc. SPIE 9426, Focus shift impacted by mask 3D and comparison between Att. PSM and OMOG, 94261H (18 March 2015); doi: 10.1117/12.2085659
Posters: Multiple Patterning and SMO
Proc. SPIE 9426, 120W ArF laser with high-wavelength stability and efficiency for the next-generation multiple-patterning immersion lithography, 94261J (18 March 2015); doi: 10.1117/12.2085631
Proc. SPIE 9426, Forbidden pitches: causes, source optimization, and their role in design rules, 94261K (18 March 2015); doi: 10.1117/12.2085753
Proc. SPIE 9426, Source optimization using particle swarm optimization algorithm in photolithography, 94261L (18 March 2015); doi: 10.1117/12.2181335
Posters: Non-IC Applications
Proc. SPIE 9426, Advanced Mask Aligner Lithography (AMALITH), 94261M (18 March 2015); doi: 10.1117/12.2085792
Posters: OPC Model
Proc. SPIE 9426, An improved virtual aberration model to simulate mask 3D and resist effects, 94261O (18 March 2015); doi: 10.1117/12.2085606
Proc. SPIE 9426, Evaluation of compact models for negative-tone development layers at 20/14nm nodes, 94261P (18 March 2015); doi: 10.1117/12.2085711
Proc. SPIE 9426, Photoresist 3D profile related etch process simulation and its application to full chip etch compact modeling, 94261Q (18 March 2015); doi: 10.1117/12.2086048
Proc. SPIE 9426, Resist profile modeling with compact resist model, 94261R (18 March 2015); doi: 10.1117/12.2086468
Proc. SPIE 9426, Impacts of post OPC shapes on pattern, 94261S (18 March 2015); doi: 10.1117/12.2087531
Proc. SPIE 9426, Calibrating etch model with SEM contours, 94261T (18 March 2015); doi: 10.1117/12.2180271