PROCEEDINGS VOLUME 9440
THE INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2014 | 6-10 OCTOBER 2014
International Conference on Micro- and Nano-Electronics 2014
THE INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2014
6-10 October 2014
Zvenigorod, Russian Federation
Front Matter: Volume 9440
Proc. SPIE 9440, Front Matter: Volume 9440, 944001 (22 December 2014); doi: 10.1117/12.2184083
Micro- and Nanoelectronic Materials and Films I
Proc. SPIE 9440, The chemistry screening for ultra low-k dielectrics plasma etching, 944002 (18 December 2014); doi: 10.1117/12.2181010
Proc. SPIE 9440, Optically transparent fluoro-containing polyimide films with low dielectric permeability, 944003 (18 December 2014); doi: 10.1117/12.2180429
Proc. SPIE 9440, Electrical properties of ALD HfO2 (EOT 0.47 nm), 944004 (18 December 2014); doi: 10.1117/12.2181009
Proc. SPIE 9440, Influence of doping on the crystallization kinetics of Ge-Sb-Te thin films for phase-change memory application, 944005 (18 December 2014); doi: 10.1117/12.2181906
Proc. SPIE 9440, Investigation of transport mechanisms in Bi doped Ge2Sb2Te5 thin films for phase change memory application, 944006 (18 December 2014); doi: 10.1117/12.2180999
Proc. SPIE 9440, Nanostructured chalcogenide materials for memory switching devices, 944007 (18 December 2014); doi: 10.1117/12.2179474
Proc. SPIE 9440, Electrochemical formation of Ag-Sn layers on copper plates, 944008 (18 December 2014); doi: 10.1117/12.2180763
Proc. SPIE 9440, TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers, 944009 (18 December 2014); doi: 10.1117/12.2180901
Proc. SPIE 9440, Surface treatment of polyimide film for metal magnetron deposition in vacuum , 94400A (18 December 2014); doi: 10.1117/12.2180420
Micro- and Nanoelectronic Materials and Films II
Proc. SPIE 9440, Reversible and non-reversible changes in nanostructured Si in humid atmosphere, 94400B (18 December 2014); doi: 10.1117/12.2180958
Proc. SPIE 9440, Low-voltage field desorption in carbon nanotubes, 94400C (18 December 2014); doi: 10.1117/12.2180937
Proc. SPIE 9440, Study of growth kinetics of amorphous carbon nanopillars formed by PECVD, 94400D (18 December 2014); doi: 10.1117/12.2179765
Proc. SPIE 9440, Formation of gold and silver cluster arrays using vacuum-thermal evaporation on a non-heated substrate, 94400E (18 December 2014); doi: 10.1117/12.2180775
Proc. SPIE 9440, Formation of Si nanocrystals in SiOx, SiOx:C:H films and Si/SiO2 multilayer nano-heterostructures by pulse laser treatments , 94400F (18 December 2014); doi: 10.1117/12.2179349
Proc. SPIE 9440, Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of hydrogen on nanosecond pulse laser crystallization of a-Si:H , 94400G (18 December 2014); doi: 10.1117/12.2179347
Proc. SPIE 9440, New generation photoelectric converter structure optimization using nano-structured materials, 94400H (18 December 2014); doi: 10.1117/12.2180871
Proc. SPIE 9440, Different methods of forming multicomponent metal sulfide by SILAR-techniques , 94400I (18 December 2014); doi: 10.1117/12.2180700
Micro- and Nanoelectronic Technologies and Equipment
Proc. SPIE 9440, Some peculiarities of the new method of a relief creating by the direct electron-beam etching of resist, 94400J (18 December 2014); doi: 10.1117/12.2179993
Proc. SPIE 9440, Formation of fast neutral beams and their using for selective etching, 94400K (18 December 2014); doi: 10.1117/12.2180434
Proc. SPIE 9440, Carbon and fluorine co-implantation for boron diffusion suppression in extremely ultra shallow junctions, 94400L (18 December 2014); doi: 10.1117/12.2181006
Diagnostics and Metrology
Proc. SPIE 9440, Approaches to a dies decoupling during failure analysis of the 3D package integrated circuits, 94400M (18 December 2014); doi: 10.1117/12.2181199
Proc. SPIE 9440, Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits, 94400N (18 December 2014); doi: 10.1117/12.2181191
Proc. SPIE 9440, Modification of cantilevers for atomic-force microscopy using the method of exposure defocused ion beam, 94400O (18 December 2014); doi: 10.1117/12.2179243
Physics and Technology of Micro- and Nanodevices
Proc. SPIE 9440, High-temperature single-electron transistor based on a gold nanoparticle, 94400P (18 December 2014); doi: 10.1117/12.2181137
Proc. SPIE 9440, Photocurrent relaxations and gain in semiconductor nanowires, 94400R (18 December 2014); doi: 10.1117/12.2180885
Proc. SPIE 9440, Photoresponse beyond the red border of the internal photoeffect: designing problems of photon counting schemes in 10μm band, 94400S (18 December 2014); doi: 10.1117/12.2180637
Proc. SPIE 9440, Large Scale (~25 m2) metal diffraction grating of submicron period as possible optoelectronic detector for short scalar gravitational waves, 94400T (18 December 2014); doi: 10.1117/12.2180681
Proc. SPIE 9440, Development of driving setup for micromechanical friction vacuum gauge, 94400U (18 December 2014); doi: 10.1117/12.2180876
Proc. SPIE 9440, The sensor of surface defects based on electrical impedance tomography technique, 94400V (18 December 2014); doi: 10.1117/12.2180464
Proc. SPIE 9440, Electrostatically actuated MEMS switch with resistive contact, 94400W (18 December 2014); doi: 10.1117/12.2179558
Modeling and Simulation I
Proc. SPIE 9440, SOI layout decomposition for double patterning lithography on high-performance computer platforms, 94400X (18 December 2014); doi: 10.1117/12.2180809
Proc. SPIE 9440, Monte Carlo simulation of boron doping profile of fin and trench structures by plasma immersion ion implantation, 94400Y (18 December 2014); doi: 10.1117/12.2181068
Proc. SPIE 9440, Aluminum anodization process modeling approach, 94400Z (18 December 2014); doi: 10.1117/12.2179218
Proc. SPIE 9440, Self-organization phenomena during electrochemical formation of nanoclusters in silicon , 944010 (18 December 2014); doi: 10.1117/12.2180533
Modeling and Simulation II
Proc. SPIE 9440, Unified description of I-V characteristics in field-effect and bipolar transistors based on current density continuity equation solution, 944011 (18 December 2014); doi: 10.1117/12.2180607
Proc. SPIE 9440, A simplified analytical model of merged MOS, 944012 (18 December 2014); doi: 10.1117/12.2179602
Proc. SPIE 9440, Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET, 944013 (18 December 2014); doi: 10.1117/12.2180417
Proc. SPIE 9440, Numerical modeling of functionally integrated injection lasers-modulators, 944014 (18 December 2014); doi: 10.1117/12.2180082
Proc. SPIE 9440, Iterative approach as alternative to S-matrix in modal methods, 944015 (18 December 2014); doi: 10.1117/12.2180437
Proc. SPIE 9440, Conducting media with spatial dispersion in a microwave field: eigenvalue problem for permittivity operator , 944016 (18 December 2014); doi: 10.1117/12.2180615
Proc. SPIE 9440, Simulation of devices based on carbon nanotubes and graphene, 944017 (18 December 2014); doi: 10.1117/12.2180112
Proc. SPIE 9440, Modeling and simulation of nanoelectronics devices in cognitive nanoinformatics, 944018 (18 December 2014); doi: 10.1117/12.2179168
Modeling and Simulation III
Proc. SPIE 9440, Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications, 944019 (18 December 2014); doi: 10.1117/12.2180610
Proc. SPIE 9440, Estimation technique for SET-tolerance of combinational ICs, 94401A (18 December 2014); doi: 10.1117/12.2180608
Proc. SPIE 9440, Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation , 94401B (18 December 2014); doi: 10.1117/12.2180756
Proc. SPIE 9440, Modeling and simulation of dose effects in bipolar analog integrated circuits , 94401C (18 December 2014); doi: 10.1117/12.2180758
Quantum Informatics
Proc. SPIE 9440, Antiferromagnetic anisotropic XXZ chain of spins S= 1/2 in the presence of an inhomogeneous transverse magnetic field as a basis for the multiqubit quantum register simulation, 94401D (18 December 2014); doi: 10.1117/12.2181023
Proc. SPIE 9440, Quantum discord in central spin model, 94401E (18 December 2014); doi: 10.1117/12.2180727
Proc. SPIE 9440, Quantum key distribution over 300 , 94401F (18 December 2014); doi: 10.1117/12.2180733
Proc. SPIE 9440, Quantum diamond chip under network optical control, 94401G (18 December 2014); doi: 10.1117/12.2180330
Proc. SPIE 9440, Numerical and analytical research of the impact of decoherence on quantum circuits, 94401H (18 December 2014); doi: 10.1117/12.2180961
Proc. SPIE 9440, The study of amplitude and phase relaxation impact on the quality of quantum information technologies, 94401I (18 December 2014); doi: 10.1117/12.2180954
Proc. SPIE 9440, The study of classical dynamical systems using quantum theory, 94401J (18 December 2014); doi: 10.1117/12.2181076
Proc. SPIE 9440, Root approach for estimation of statistical distributions, 94401K (18 December 2014); doi: 10.1117/12.2181090
Proc. SPIE 9440, Finite frames constructed by solving Fekete problem and accuracy of quantum tomography protocols based on them, 94401L (18 December 2014); doi: 10.1117/12.2180949
Proc. SPIE 9440, Qubit model of Jaynes-Cummings-Hubbard with phonon environment for exciton transport in light-harvesting FMO complex, 94401M (18 December 2014); doi: 10.1117/12.2180736
Proc. SPIE 9440, Biologically inspired path to quantum computer, 94401N (18 December 2014); doi: 10.1117/12.2180581
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