Front Matter: Volume 9635
Proc. SPIE 9635, Front Matter: Volume 9635, 963501 (17 November 2015); doi: 10.1117/12.2217621
Keynote Session
Proc. SPIE 9635, Lithography and mask challenges at the leading edge, 963502 (23 October 2015); doi: 10.1117/12.2203117
Invited Session: Joint with Photomask and Scanning Microscopies
Proc. SPIE 9635, EUV High-NA scanner and mask optimization for sub 8 nm resolution, 963503 (16 November 2015); doi: 10.1117/12.2202258
Edge Placement Error Issue and Solution for Multi-Patterning
Proc. SPIE 9635, Characterization and mitigation of relative edge placement errors (rEPE) in full-chip computational lithography, 963505 (23 October 2015); doi: 10.1117/12.2196634
Proc. SPIE 9635, Accurate mask registration on tilted lines for 6F2 DRAM manufacturing, 963506 (23 October 2015); doi: 10.1117/12.2202818
Proc. SPIE 9635, Higher order feed-forward control of reticle writing error fingerprints, 963507 (23 October 2015); doi: 10.1117/12.2197556
Proc. SPIE 9635, Exploring the origin of charging-induced pattern positioning errors in mask making using e-beam lithography, 963508 (23 October 2015); doi: 10.1117/12.2200961
EUV Mask Infrastructure Readiness
Proc. SPIE 9635, EUV mask infrastructure readiness and gaps for TD and HVM, 963509 (11 November 2015); doi: 10.1117/12.2202724
Proc. SPIE 9635, Fabrication of a full-size EUV pellicle based on silicon nitride, 96350A (23 October 2015); doi: 10.1117/12.2196901
Proc. SPIE 9635, Detection capability enhancement with a learning system for PEM mask inspection tool, 96350B (23 October 2015); doi: 10.1117/12.2196944
Proc. SPIE 9635, Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening, 96350C (23 October 2015); doi: 10.1117/12.2197226
Student Session
Proc. SPIE 9635, The study of phase effects in EUV mask pattern defects, 96350D (28 October 2015); doi: 10.1117/12.2197769
Proc. SPIE 9635, ILP-based co-optimization of cut mask layout, dummy fill, and timing for sub-14nm BEOL technology, 96350E (23 October 2015); doi: 10.1117/12.2199299
Proc. SPIE 9635, Examination of phase retrieval algorithms for patterned EUV mask metrology, 96350F (3 November 2015); doi: 10.1117/12.2197868
Proc. SPIE 9635, Absorber topography dependence of phase edge effects , 96350G (9 November 2015); doi: 10.1117/12.2197861
Scanning Beam Technologies and Applications: Joint Session with Photomask and Scanning Microscopies
Proc. SPIE 9635, Quantitative analysis of CD degradation induced by the fogging effect in e-beam lithography, 96350I (28 October 2015); doi: 10.1117/12.2197838
EUV Simulation
Proc. SPIE 9635, Imaging enhancement by reduction of mask topography induced phase aberrations for horizontal 1D spaces under D90Y illumination, 96350K (23 October 2015); doi: 10.1117/12.2196800
Proc. SPIE 9635, EUV photomask defects: what prints, what doesn't, and what is required for HVM, 96350L (23 October 2015); doi: 10.1117/12.2197476
Proc. SPIE 9635, New method of detection and classification of yield-impacting EUV mask defects, 96350M (23 October 2015); doi: 10.1117/12.2197871
Proc. SPIE 9635, Viability of pattern shift for defect-free EUV photomasks at the 7nm node, 96350N (23 October 2015); doi: 10.1117/12.2197922
Photomask Technology for Alternative Lithography: NIL
Proc. SPIE 9635, Nanoimprint system development and status for high-volume semiconductor manufacturing, 96350P (23 October 2015); doi: 10.1117/12.2197520
Proc. SPIE 9635, DUV inspection tool application for beyond optical resolution limit pattern, 96350R (23 October 2015); doi: 10.1117/12.2197890
Proc. SPIE 9635, Optical simulations for fractional fluorine terminated coatings on nanoimprint lithography masks, 96350S (23 October 2015); doi: 10.1117/12.2197371
Mask Data Preparation and Mask Process Correction
Proc. SPIE 9635, Mask process matching using a model based data preparation solution, 96350T (23 October 2015); doi: 10.1117/12.2199273
Proc. SPIE 9635, A fully model-based MPC solution including VSB shot dose assignment and shape correction, 96350U (23 October 2015); doi: 10.1117/12.2199157
Proc. SPIE 9635, MPC model validation using reverse analysis method, 96350V (23 October 2015); doi: 10.1117/12.2197162
Proc. SPIE 9635, Accurate mask model implementation in OPC model for 14nm nodes and beyond, 96350W (23 October 2015); doi: 10.1117/12.2203267
Invited and Best Papers
Proc. SPIE 9635, Properties and performance of EUVL pellicle membranes, 96350X (23 October 2015); doi: 10.1117/12.2199076
Proc. SPIE 9635, Pattern inspection of etched multilayer EUV mask, 96350Y (23 October 2015); doi: 10.1117/12.2203123
Proc. SPIE 9635, Experimental validation of novel mask technology to reduce mask 3D effects, 96350Z (23 October 2015); doi: 10.1117/12.2203124
Proc. SPIE 9635, EUV or 193i: Who wins the center stage for 7nm node HVM in 2018?, 963510 (23 October 2015); doi: 10.1117/12.2208944
Metrology and Inspection
Proc. SPIE 9635, From nightmares to sweet dreams: inspection of aggressive OPC on 14nm reticles (and beyond) using a novel high-NA and low-NA dual method, 963511 (23 October 2015); doi: 10.1117/12.2197729
Proc. SPIE 9635, Variations in programmed phase defect size and its impact on defect detection signal intensity using at-wavelength inspection system, 963513 (23 October 2015); doi: 10.1117/12.2197620
Proc. SPIE 9635, EUV actinic brightfield mask microscopy for predicting printed defect images , 963514 (3 November 2015); doi: 10.1117/12.2196966
Patterning and Process
Proc. SPIE 9635, Sensitivity analysis for high accuracy proximity effect correction, 963515 (23 October 2015); doi: 10.1117/12.2197175
Proc. SPIE 9635, Photomask etch system and process for 10nm technology node and beyond, 963516 (23 October 2015); doi: 10.1117/12.2199030
Proc. SPIE 9635, High-durability phase-shift film with variable transmittance, 963517 (28 October 2015); doi: 10.1117/12.2202596
Proc. SPIE 9635, Evaluation of multilayer defect repair viability and protection techniques for EUV masks, 963518 (23 October 2015); doi: 10.1117/12.2197761
Proc. SPIE 9635, Key indexes of the effectiveness of mask surface treatments, 963519 (18 December 2015); doi: 10.1117/12.2197675
Poster Session: EUV Masks
Proc. SPIE 9635, Automatic defect review for EUV photomask reticles by atomic force microscope, 96351A (23 October 2015); doi: 10.1117/12.2197382
Proc. SPIE 9635, Ruthenium capping layer preservation for 100X clean through pH driven effects, 96351B (23 October 2015); doi: 10.1117/12.2202188
Proc. SPIE 9635, Process capability of etched multilayer EUV mask, 96351C (23 October 2015); doi: 10.1117/12.2197686
Proc. SPIE 9635, Actinic review of EUV masks: status and recent results of the AIMS EUV system, 96351D (9 November 2015); doi: 10.1117/12.2205054
Proc. SPIE 9635, Phase imaging results of phase defect using micro coherent EUV scatterometry microscope, 96351E (9 November 2015); doi: 10.1117/12.2205304
Poster Session: Mask Data Preparation
Proc. SPIE 9635, Optical proximity correction for extreme ultra-violet mask with pellicle, 96351F (23 October 2015); doi: 10.1117/12.2196975
Proc. SPIE 9635, Mask process simulation for mask quality improvement, 96351G (23 October 2015); doi: 10.1117/12.2196713
Proc. SPIE 9635, Rule-based OPC and MPC interaction for implant layers , 96351H (23 October 2015); doi: 10.1117/12.2197195
Poster Session: Material and Process
Proc. SPIE 9635, Attenuated phase-shift mask (PSM) blanks for flat panel display, 96351I (23 October 2015); doi: 10.1117/12.2196857
Proc. SPIE 9635, Advanced repair solution of clear defects on HTPSM by using nanomachining tool, 96351J (23 October 2015); doi: 10.1117/12.2196941
Proc. SPIE 9635, Exposure characterizations of polymer type electron beam resists with various molecular weights for next-generation photomask, 96351K (23 October 2015); doi: 10.1117/12.2196942
Proc. SPIE 9635, New grade of 9-inch size mask blanks for 450mm wafer process (2015), 96351L (11 November 2015); doi: 10.1117/12.2196958
Proc. SPIE 9635, Printability evaluation of programmed defects on OMOG masks, 96351M (23 October 2015); doi: 10.1117/12.2194073
Proc. SPIE 9635, Investigation of scum type growing defects on attenuated PSM and its prevention, 96351O (23 October 2015); doi: 10.1117/12.2196069
Proc. SPIE 9635, Photomask repair using low-energetic electrons, 96351P (23 October 2015); doi: 10.1117/12.2207755
Poster Session: Metrology
Proc. SPIE 9635, Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections, 96351Q (23 October 2015); doi: 10.1117/12.2196931