PROCEEDINGS VOLUME 9658
PHOTOMASK JAPAN 2015 | 20-22 APRIL 2015
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
PHOTOMASK JAPAN 2015
20-22 April 2015
Yokohama, Japan
Front Matter: Volume 9658
Proc. SPIE 9658, Front Matter: Volume 9658, 965801 (10 July 2015); doi: 10.1117/12.2203615
FPD Photomasks
Proc. SPIE 9658, Photomasks for FPD, 965802 (9 July 2015); doi: 10.1117/12.2193581
Proc. SPIE 9658, Impact of the back side flatness of a mask on the panel overlay, 965803 (9 July 2015); doi: 10.1117/12.2196074
DSA
Proc. SPIE 9658, N7 logic via patterning using templated DSA: implementation aspects, 965804 (9 July 2015); doi: 10.1117/12.2196524
Writing Technologies
Proc. SPIE 9658, Investigation of local registration performance of IMS Nanofabrication’s Multi-Beam Mask Writer, 965805 (9 July 2015); doi: 10.1117/12.2196388
Photomask Fabrication Processes
Proc. SPIE 9658, The method of quartz damage recovery in the photomask repair process, 965806 (9 July 2015); doi: 10.1117/12.2193081
Proc. SPIE 9658, Multi-beam SEM technology for ultra-high throughput, 965807 (9 July 2015); doi: 10.1117/12.2195705
Proc. SPIE 9658, Development of high-transmittance phase-shifting mask for ArF immersion lithography , 965808 (9 July 2015); doi: 10.1117/12.2203239
MDP & OPC
Proc. SPIE 9658, Pitch-based pattern splitting for 1D layout, 96580A (9 July 2015); doi: 10.1117/12.2192529
Proc. SPIE 9658, High performance ILT for hotspots repair with hierarchical pattern matching , 96580B (9 July 2015); doi: 10.1117/12.2192929
Proc. SPIE 9658, Challenges and requirements of mask data processing for multi-beam mask writer, 96580C (9 July 2015); doi: 10.1117/12.2199274
EUVL Masks I
Proc. SPIE 9658, Mask blank defect printability comparison using optical and SEM mask and wafer inspection and bright field actinic mask imaging, 96580E (9 July 2015); doi: 10.1117/12.2201048
EUVL Masks II
Proc. SPIE 9658, EUV scanner printability evaluation of natural blank defects detected by actinic blank inspection, 96580F (9 July 2015); doi: 10.1117/12.2197622
Proc. SPIE 9658, ENDEAVOUR to understand EUV buried defect printability, 96580G (9 July 2015); doi: 10.1117/12.2197763
Proc. SPIE 9658, Defectivity evaluation of EUV reticles with etched multilayer image border by wafer printing analysis, 96580H (9 July 2015); doi: 10.1117/12.2197682
Proc. SPIE 9658, Alternative EUV mask technology to compensate for mask 3D effects , 96580I (9 July 2015); doi: 10.1117/12.2197213
EUVL Masks III
Proc. SPIE 9658, Grid-supported EUV pellicles: A theoretical investigation for added value, 96580J (9 July 2015); doi: 10.1117/12.2197454
Proc. SPIE 9658, Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity, 96580K (9 July 2015); doi: 10.1117/12.2197752
EUVL Masks IV
Proc. SPIE 9658, Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks, 96580L (9 July 2015); doi: 10.1117/12.2197151
Proc. SPIE 9658, Pattern inspection of etched multilayer EUV mask, 96580M (9 July 2015); doi: 10.1117/12.2197498
Proc. SPIE 9658, Analysis of a low-aspect phase defect for actinic EUVL mask blank inspection, 96580N (9 July 2015); doi: 10.1117/12.2197502
Proc. SPIE 9658, Detection capability of Actinic Blank Inspection tool, 96580O (9 July 2015); doi: 10.1117/12.2197309
Poster Session
Proc. SPIE 9658, Development of new high transmission eaPSM for Negative Tone Development process on wafer, 96580P (9 July 2015); doi: 10.1117/12.2197611
Proc. SPIE 9658, The study of develop optimization to control various resist defect in Photomask fabrication, 96580Q (9 July 2015); doi: 10.1117/12.2193111
Proc. SPIE 9658, Study on modeling of resist heating effect correction in EB mask writer EBM-9000, 96580R (9 July 2015); doi: 10.1117/12.2199615
Proc. SPIE 9658, Mask CD uniformity improvement by electron scanning exposure based Global Loading Effect Correction, 96580S (9 July 2015); doi: 10.1117/12.2192988
Proc. SPIE 9658, Maskless lithography using point array technique for fine patterns, 96580T (9 July 2015); doi: 10.1117/12.2192930
Proc. SPIE 9658, Grab a coffee: your aerial images are already analyzed, 96580U (9 July 2015); doi: 10.1117/12.2196641
Proc. SPIE 9658, Study of defect verification based on lithography simulation with a SEM system, 96580V (9 July 2015); doi: 10.1117/12.2197617
Proc. SPIE 9658, Improvements of AIMS D2DB matching for product patterns, 96580W (9 July 2015); doi: 10.1117/12.2197609
Proc. SPIE 9658, Automatic classification and accurate size measurement of blank mask defects, 96580X (9 July 2015); doi: 10.1117/12.2198001
Proc. SPIE 9658, Strategy optimization for mask rule check in wafer fab, 96580Y (9 July 2015); doi: 10.1117/12.2192951
Proc. SPIE 9658, CD measurement point extraction from local dense patterns, 96580Z (9 July 2015); doi: 10.1117/12.2195445
Proc. SPIE 9658, Effective conflict resolution strategies for SRAF placement, 965810 (9 July 2015); doi: 10.1117/12.2193023
Proc. SPIE 9658, Exploring EUV mask backside defectivity and control methods, 965811 (9 July 2015); doi: 10.1117/12.2197383
Proc. SPIE 9658, Influence of unit process interaction on EUV mask performance, 965812 (9 July 2015); doi: 10.1117/12.2195634
Proc. SPIE 9658, Patterning dependence on the mask defect for extreme ultraviolet lithography, 965813 (9 July 2015); doi: 10.1117/12.2197751
Proc. SPIE 9658, Mo/Si multilayer mirrors with 300-bilayers for EUV lithography, 965814 (9 July 2015); doi: 10.1117/12.2197314
Special Poster Session: Mask/Lithography related technology in Academia
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