PROCEEDINGS VOLUME 9661
31ST EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 22-23 JUNE 2015
31st European Mask and Lithography Conference
31ST EUROPEAN MASK AND LITHOGRAPHY CONFERENCE
22-23 June 2015
Eindhoven, Netherlands
Front Matter: Volume 9661
Proc. SPIE 9661, Front Matter: Volume 9661, 966101 (4 September 2015); doi: 10.1117/12.2217975
Patterning and Process Characterization
Proc. SPIE 9661, Mask and lithography techniques for FPD, 966103 (4 September 2015); doi: 10.1117/12.2197022
Proc. SPIE 9661, SLM based semiconductor maskwriter, 966104 (4 September 2015); doi: 10.1117/12.2197024
Proc. SPIE 9661, Advanced process characterization of a 10nm Metal 1 Logic layer using light source modulation and monitoring, 966105 (4 September 2015); doi: 10.1117/12.2196862
DSA
Proc. SPIE 9661, Skeleton-based OPC application for DSA full chip mask correction, 966106 (4 September 2015); doi: 10.1117/12.2195171
EUV Lithography
Proc. SPIE 9661, Experimental validation of novel EUV mask technology to reduce mask 3D effects , 966109 (4 September 2015); doi: 10.1117/12.2195329
Proc. SPIE 9661, Understanding the litho-impact of phase due to 3D mask effects when using off-axis illumination, 96610A (4 September 2015); doi: 10.1117/12.2195469
Proc. SPIE 9661, Understanding of Out-of-Band DUV light in EUV lithography: controlling impact on imaging and mitigation strategies, 96610B (4 September 2015); doi: 10.1117/12.2195733
Mask Preparation and OPC
Proc. SPIE 9661, Optimization of rule-based OPC fragmentation to improve wafer image rippling, 96610D (4 September 2015); doi: 10.1117/12.2194755
Proc. SPIE 9661, OPC verification considering CMP induced topography, 96610E (4 September 2015); doi: 10.1117/12.2196646
Towards 7nm Technology
Proc. SPIE 9661, Getting ready for EUV in HVM, 96610F (4 September 2015); doi: 10.1117/12.2195622
Proc. SPIE 9661, Patterning options for N7 logic: prospects and challenges for EUV, 96610G (4 September 2015); doi: 10.1117/12.2196426
Mask Metrology
Proc. SPIE 9661, Fast alternative method for measuring the wavefront of lithography exposure systems , 96610J (4 September 2015); doi: 10.1117/12.2195334
Proc. SPIE 9661, Challenges in constructing EUV metrology tools to qualify the EUV masks for HVM implementation, 96610K (4 September 2015); doi: 10.1117/12.2196727
Measurement and Inspection Techniques
Proc. SPIE 9661, Investigations for an alternative to contact angle measurement after Hexamethyldisilazane deposition, 96610L (4 September 2015); doi: 10.1117/12.2196955
Proc. SPIE 9661, Productivity enhancement and reliability through AutoAnalysis, 96610M (4 September 2015); doi: 10.1117/12.2196651
Proc. SPIE 9661, YieldStar based reticle 3D measurements and its application, 96610N (4 September 2015); doi: 10.1117/12.2196665
Proc. SPIE 9661, Enabling inspection solutions for future mask technologies through the development of massively parallel E-Beam inspection, 96610O (4 September 2015); doi: 10.1117/12.2196120
Extension of Immersion Lithography
Proc. SPIE 9661, AGILE integration into APC for high mix logic fab, 96610P (4 September 2015); doi: 10.1117/12.2194746
Proc. SPIE 9661, Enabling the 14nm node contact patterning using advanced RET solutions, 96610Q (4 September 2015); doi: 10.1117/12.2193772
Proc. SPIE 9661, Product layout induced topography effects on intrafield levelling, 96610R (4 September 2015); doi: 10.1117/12.2194079
High NA EUV Lithography
Proc. SPIE 9661, Imaging performance of the EUV high NA anamorphic system, 96610S (4 September 2015); doi: 10.1117/12.2195476
Proc. SPIE 9661, Anamorphic high-NA EUV lithography optics, 96610T (4 September 2015); doi: 10.1117/12.2196393
Poster Session
Proc. SPIE 9661, Reverse replication of circular micro grating structures with soft lithography, 96610V (4 September 2015); doi: 10.1117/12.2194351
Proc. SPIE 9661, Characterization of optical material parameters for EUV Lithography applications at PTB, 96610W (4 September 2015); doi: 10.1117/12.2195009
Proc. SPIE 9661, Increasing efficiency and effectiveness of processes related to airborne particles in reticle mask environments, 96610Y (4 September 2015); doi: 10.1117/12.2209736
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