PROCEEDINGS VOLUME 9748
SPIE OPTO | 13-18 FEBRUARY 2016
Gallium Nitride Materials and Devices XI
IN THIS VOLUME

0 Sessions, 31 Papers, 0 Presentations
BN II  (1)
Growth I  (1)
Growth II  (1)
Lasers I  (1)
Lasers II  (5)
LEDs I  (2)
LEDs II  (1)
LEDs III  (5)
Proceedings Volume 9748 is from: Logo
SPIE OPTO
13-18 February 2016
San Francisco, California, United States
Front Matter: Volume 9748
Proc. SPIE 9748, Front Matter: Volume 9748, 974801 (18 July 2016); doi: 10.1117/12.2239452
BN II
Proc. SPIE 9748, Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping, 974805 (26 February 2016); doi: 10.1117/12.2208392
Growth I
Proc. SPIE 9748, HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut, 974809 (26 February 2016); doi: 10.1117/12.2208854
Growth II
Proc. SPIE 9748, Optical and crystal quality improvement in green emitting InxGa1-xN multi-quantum wells through optimization of MOCVD growth, 97480K (26 February 2016); doi: 10.1117/12.2213309
Characterization I
Proc. SPIE 9748, Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells, 97480L (26 February 2016); doi: 10.1117/12.2211429
Characterization II
Proc. SPIE 9748, New directions in GaN photonics, 97480Q (29 February 2016); doi: 10.1117/12.2214365
Proc. SPIE 9748, Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements, 97480S (26 February 2016); doi: 10.1117/12.2211914
Characterization III
Proc. SPIE 9748, Approaches to highly efficient UV emitters based on AlGaN quantum wells, 97480U (26 February 2016); doi: 10.1117/12.2208779
Proc. SPIE 9748, Influence of vacancies on GaN/AlN interface characteristics, 97480W (26 February 2016); doi: 10.1117/12.2211195
Electron Devices
Proc. SPIE 9748, Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions, 97480Y (26 February 2016); doi: 10.1117/12.2211964
Proc. SPIE 9748, Monolithic enhancement-mode and depletion-mode GaN-based MOSHEMTs, 97480Z (26 February 2016); doi: 10.1117/12.2207849
Lasers I
Proc. SPIE 9748, Development for ultraviolet vertical cavity surface emitting lasers, 974815 (26 February 2016); doi: 10.1117/12.2212617
Lasers II
Proc. SPIE 9748, Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth, 974817 (26 February 2016); doi: 10.1117/12.2207222
Proc. SPIE 9748, Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure, 974818 (26 February 2016); doi: 10.1117/12.2212011
Proc. SPIE 9748, AlGaInN laser diode technology for systems applications, 974819 (26 February 2016); doi: 10.1117/12.2207231
Proc. SPIE 9748, InGaN/GaN DFB laser diodes at 434 nm with deeply etched sidewall gratings, 97481A (26 February 2016); doi: 10.1117/12.2212414
Proc. SPIE 9748, Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts, 97481B (26 February 2016); doi: 10.1117/12.2206211
Nanostructures
Proc. SPIE 9748, Linearly polarized single photons from small site-controlled GaN nanowire quantum dots, 97481E (26 February 2016); doi: 10.1117/12.2212455
Proc. SPIE 9748, Strain engineered high reflectivity DBRs in the deep UV, 97481G (26 February 2016); doi: 10.1117/12.2211700
LEDs I
Proc. SPIE 9748, Deep ultraviolet light-emitting and laser diodes, 97481J (26 February 2016); doi: 10.1117/12.2217738
Proc. SPIE 9748, Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs, 97481O (26 February 2016); doi: 10.1117/12.2208906
LEDs II
Proc. SPIE 9748, Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire, 97481S (26 February 2016); doi: 10.1117/12.2213741
LEDs III
Proc. SPIE 9748, High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates, 97481U (26 February 2016); doi: 10.1117/12.2211880
Proc. SPIE 9748, GaN-based superluminescent diodes with long lifetime, 97481V (26 February 2016); doi: 10.1117/12.2212699
Proc. SPIE 9748, Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals, 97481W (26 February 2016); doi: 10.1117/12.2212243
Proc. SPIE 9748, Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission, 97481Z (26 February 2016); doi: 10.1117/12.2209661
Proc. SPIE 9748, Hierarchical growth of GaN nanowires for light emitting diode applications, 974820 (26 February 2016); doi: 10.1117/12.2213024
Poster Session
Proc. SPIE 9748, Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers, 974825 (26 February 2016); doi: 10.1117/12.2213777
Proc. SPIE 9748, Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells, 974826 (26 February 2016); doi: 10.1117/12.2213835
Proc. SPIE 9748, Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN , 974827 (26 February 2016); doi: 10.1117/12.2213859
Proc. SPIE 9748, Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes, 974828 (26 February 2016); doi: 10.1117/12.2213908
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