Proceedings Volume 9776 is from: Logo
SPIE ADVANCED LITHOGRAPHY
21-25 February 2016
San Jose, California, United States
Advanced Lithography 2016 Plenary Session
Proc. SPIE 9776, Evolution in the concentration of activities in lithography, 977601 (18 March 2016); doi: 10.1117/12.2236038
Keynote Session
Proc. SPIE 9776, EUV progress toward HVM readiness, 977602 (18 March 2016); doi: 10.1117/12.2225014
EUV Materials I: MOx Resists: Joint session with Conferences 9776 and 9779
Proc. SPIE 9776, Recent progress in nanoparticle photoresists development for EUV lithography, 977604 (18 March 2016); doi: 10.1117/12.2218704
Proc. SPIE 9776, Novel ultra-high sensitive 'metal resist' for EUV lithography, 977605 (18 March 2016); doi: 10.1117/12.2219056
Proc. SPIE 9776, Novel metal containing resists for EUV lithography extendibility, 977606 (18 March 2016); doi: 10.1117/12.2220149
EUV Materials II: CARs and Novel Approaches: Joint Session with Conferences 9776 and 9779
Proc. SPIE 9776, Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure, 977607 (22 March 2016); doi: 10.1117/12.2219433
Proc. SPIE 9776, Negative-tone imaging with EUV exposure toward 13nm hp, 977608 (18 March 2016); doi: 10.1117/12.2218761
Proc. SPIE 9776, Approach to hp10nm resolution by applying Dry Development Rinse Process (DDRP) and Materials (DDRM), 977609 (18 March 2016); doi: 10.1117/12.2219475
EUV Integration
Proc. SPIE 9776, Demonstration of an N7 integrated fab process for metal oxide EUV photoresist, 97760B (18 March 2016); doi: 10.1117/12.2220051
Proc. SPIE 9776, EUV process establishment through litho and etch for N7 node, 97760C (18 March 2016); doi: 10.1117/12.2218885
Proc. SPIE 9776, Improvement of EUV mix-match overlay for production implementation, 97760E (18 March 2016); doi: 10.1117/12.2219169
EUV Mask
Proc. SPIE 9776, 3D mask effects of absorber geometry in EUV lithography systems, 97760F (18 March 2016); doi: 10.1117/12.2219708
Proc. SPIE 9776, Etched-multilayer black border formed on EUV mask: Does it cause image degradation during pattern inspection using EB optics?, 97760G (18 March 2016); doi: 10.1117/12.2218940
Proc. SPIE 9776, Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks, 97760H (4 April 2016); doi: 10.1117/12.2219513
Proc. SPIE 9776, Throughput compensation through optical proximity correction for realization of an extreme-ultraviolet pellicle, 97760I (18 March 2016); doi: 10.1117/12.2220155
EUV Source I
Proc. SPIE 9776, High-radiance LDP source: clean, reliable, and stable EUV source for mask inspection, 97760L (18 March 2016); doi: 10.1117/12.2219219
Proc. SPIE 9776, Study of Sn removal processes for in-situ collector cleaning, 97760M (18 March 2016); doi: 10.1117/12.2219394
EUV Source II
Proc. SPIE 9776, Energy effective dual-pulse bispectral laser for EUV lithography, 97760Q (18 March 2016); doi: 10.1117/12.2219931
Proc. SPIE 9776, Enabling laboratory EUV research with a compact exposure tool, 97760R (18 March 2016); doi: 10.1117/12.2219164
Proc. SPIE 9776, Tin LPP plasma control in the argon cusp source, 97760S (18 March 2016); doi: 10.1117/12.2222299
Proc. SPIE 9776, Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs, 97760T (18 March 2016); doi: 10.1117/12.2218966
EUV Resist I
Proc. SPIE 9776, EUV resists: What's next?, 97760V (18 March 2016); doi: 10.1117/12.2225017
Proc. SPIE 9776, Benchmarking study of EUV resists for NXE:3300B, 97760W (4 April 2016); doi: 10.1117/12.2222065
Proc. SPIE 9776, Patterning performance of chemically amplified resist in EUV lithography, 97760Y (18 March 2016); doi: 10.1117/12.2218417
Proc. SPIE 9776, Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography, 97760Z (18 March 2016); doi: 10.1117/12.2220026
Proc. SPIE 9776, EUV extendibility via dry development rinse process, 977610 (11 April 2016); doi: 10.1117/12.2220113
EUV Resist II
Proc. SPIE 9776, Dynamic absorption coefficients of CAR and non-CAR resists at EUV, 977612 (18 March 2016); doi: 10.1117/12.2219193
Proc. SPIE 9776, Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography, 977614 (18 March 2016); doi: 10.1117/12.2219221
EUV Mask and Optics
Proc. SPIE 9776, Novel EUV mask black border and its impact on wafer imaging, 977615 (18 March 2016); doi: 10.1117/12.2218942
Proc. SPIE 9776, EUV and optical lithographic pattern shift at the 5nm node, 977616 (18 March 2016); doi: 10.1117/12.2217532
Proc. SPIE 9776, Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners, 977617 (18 March 2016); doi: 10.1117/12.2218918
Proc. SPIE 9776, Image-based pupil plane characterization via principal component analysis for EUVL tools, 977618 (18 March 2016); doi: 10.1117/12.2219745
Proc. SPIE 9776, Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks, 977619 (18 March 2016); doi: 10.1117/12.2219215
EUV Mask Inspection and Imaging
Proc. SPIE 9776, Actinic review of EUV masks: performance data and status of the AIMS EUV System, 97761A (18 March 2016); doi: 10.1117/12.2219247
Proc. SPIE 9776, EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection, 97761C (19 March 2016); doi: 10.1117/12.2219601
Proc. SPIE 9776, Enhancing native defect sensitivity for EUV actinic blank inspection: optimized pupil engineering and photon noise study, 97761D (11 April 2016); doi: 10.1117/12.2220277
Proc. SPIE 9776, Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation, 97761E (18 March 2016); doi: 10.1117/12.2218763
Proc. SPIE 9776, Scanning coherent diffractive imaging methods for actinic EUV mask metrology, 97761F (18 March 2016); doi: 10.1117/12.2219937
Proc. SPIE 9776, Advances in the detection capability on actinic blank inspection, 97761G (18 March 2016); doi: 10.1117/12.2222747
Proc. SPIE 9776, Through-pellicle defect inspection of EUV masks using an ArF-based inspection tool, 97761H (18 March 2016); doi: 10.1117/12.2218454
EUV Extension
Proc. SPIE 9776, EUV high-NA scanner and mask optimization for sub-8nm resolution, 97761I (18 March 2016); doi: 10.1117/12.2220150
Proc. SPIE 9776, Emulation of anamorphic imaging on the SHARP EUV mask microscope, 97761J (18 March 2016); doi: 10.1117/12.2219294
Proc. SPIE 9776, High-NA EUV projection lens with central obscuration, 97761L (18 March 2016); doi: 10.1117/12.2219933
Proc. SPIE 9776, Study of Gd/Tb LPP emission near λ = 6.7nm for beyond EUV lithography, 97761M (18 March 2016); doi: 10.1117/12.2219840
Proc. SPIE 9776, Current development status of HSFET (High NA Small Field Exposure Tool) in EIDEC, 97761N (18 March 2016); doi: 10.1117/12.2219368
EUV Patterning I
Proc. SPIE 9776, Contrast optimization for 0.33NA EUV lithography, 97761P (26 April 2016); doi: 10.1117/12.2220036
Proc. SPIE 9776, Extension of practical k1 limit in EUV lithography, 97761Q (18 March 2016); doi: 10.1117/12.2219546
Proc. SPIE 9776, Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs, 97761R (18 March 2016); doi: 10.1117/12.2219177
EUV Patterning II
Proc. SPIE 9776, Assist features: placement, impact, and relevance for EUV imaging, 97761S (18 March 2016); doi: 10.1117/12.2220025
Proc. SPIE 9776, EUV implementation of assist features in contact patterns, 97761U (18 March 2016); doi: 10.1117/12.2218315