PROCEEDINGS VOLUME 9778
SPIE ADVANCED LITHOGRAPHY | 21-25 FEBRUARY 2016
Metrology, Inspection, and Process Control for Microlithography XXX
Proceedings Volume 9778 is from: Logo
SPIE ADVANCED LITHOGRAPHY
21-25 February 2016
San Jose, California, United States
Front Matter: Volume 9778
Proc. SPIE 9778, Front Matter: Volume 9778, 977801 (23 May 2016); doi: 10.1117/12.2229274
Keynote Session
Proc. SPIE 9778, Holistic lithography and metrology's importance in driving patterning fidelity, 977802 (18 April 2016); doi: 10.1117/12.2225538
Optical Metrology I
Proc. SPIE 9778, Scatterometry modeling for gratings with roughness and irregularities, 977804 (21 April 2016); doi: 10.1117/12.2219019
Proc. SPIE 9778, Modeling ellipsometric measurement of novel 3D structures with RCWA and FEM simulations, 977805 (21 April 2016); doi: 10.1117/12.2219270
Proc. SPIE 9778, Improving OCD time to solution using Signal Response Metrology, 977806 (24 March 2016); doi: 10.1117/12.2219775
Proc. SPIE 9778, Innovative scatterometry approach for self-aligned quadruple patterning (SAQP) process control, 977807 (24 March 2016); doi: 10.1117/12.2220287
Proc. SPIE 9778, Lensless hyperspectral spectromicroscopy with a tabletop extreme-ultraviolet source, 977808 (21 April 2016); doi: 10.1117/12.2220711
SEM I: Modeling and Simulation
Proc. SPIE 9778, Virtual rough samples to test 3D nanometer-scale scanning electron microscopy stereo photogrammetry, 977809 (24 March 2016); doi: 10.1117/12.2219777
Proc. SPIE 9778, Improvements to the analytical linescan model for SEM metrology, 97780A (18 March 2016); doi: 10.1117/12.2218443
Proc. SPIE 9778, Gaining insight into effective metrology height through the use of a compact CDSEM model for lithography simulation, 97780B (24 March 2016); doi: 10.1117/12.2219776
Proc. SPIE 9778, Electric fields in Scanning Electron Microscopy simulations, 97780C (21 April 2016); doi: 10.1117/12.2219182
Proc. SPIE 9778, GPU accelerated Monte-Carlo simulation of SEM images for metrology, 97780D (21 April 2016); doi: 10.1117/12.2219160
New Horizons
Proc. SPIE 9778, HVM metrology challenges towards the 5nm node, 97780E (24 March 2016); doi: 10.1117/12.2218375
Proc. SPIE 9778, Measurement of asymmetric side wall angles by coherent scanning Fourier scatterometry, 97780G (7 April 2016); doi: 10.1117/12.2218824
Proc. SPIE 9778, Non-contact distance measurement and profilometry using thermal near-field radiation towards a high resolution inspection and metrology solution, 97780H (21 April 2016); doi: 10.1117/12.2218877
Proc. SPIE 9778, Reliable characterization of materials and nanostructured systems <<50nm using coherent EUV beams, 97780I (21 April 2016); doi: 10.1117/12.2219434
Proc. SPIE 9778, Spectroscopic imaging of buried layers in 2+1D via tabletop ptychography with high-harmonic EUV illumination, 97780J (21 April 2016); doi: 10.1117/12.2220368
X-ray Methods
Proc. SPIE 9778, Characterization of cross-sectional profile of resist L/S and hole pattern using CD-SAXS, 97780L (21 April 2016); doi: 10.1117/12.2218983
Proc. SPIE 9778, XPS-XRF hybrid metrology enabling FDSOI process, 97780N (24 March 2016); doi: 10.1117/12.2219748
Inspection
Proc. SPIE 9778, Study of design-based e-beam defect inspection for hotspot detection and process window characterization on 10nm logic device, 97780O (21 April 2016); doi: 10.1117/12.2218971
Proc. SPIE 9778, Electromagnetic field modeling for defect detection in 7 nm node patterned wafers, 97780P (8 March 2016); doi: 10.1117/12.2218979
Proc. SPIE 9778, Detection of metallic buried void by effective density contrast mode, 97780Q (21 April 2016); doi: 10.1117/12.2219186
Proc. SPIE 9778, Topological study of nanomaterials using surface-enhanced ellipsometric contrast microscopy (SEEC), 97780R (24 March 2016); doi: 10.1117/12.2220592
Process Control
Proc. SPIE 9778, Focus control enhancement and on-product focus response analysis methodology, 97780T (24 March 2016); doi: 10.1117/12.2213019
Proc. SPIE 9778, Analysis of wafer heating in 14nm DUV layers, 97780U (21 April 2016); doi: 10.1117/12.2218724
Proc. SPIE 9778, Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process, 97780V (18 March 2016); doi: 10.1117/12.2218863
Proc. SPIE 9778, Design-based metrology: beyond CD/EPE metrics to evaluate printability performance, 97780W (25 March 2016); doi: 10.1117/12.2221894
Proc. SPIE 9778, A new approach to process control using Instability Index, 97780X (21 April 2016); doi: 10.1117/12.2218623
Optical Metrology II
Proc. SPIE 9778, Enabling quantitative optical imaging for in-die-capable critical dimension targets, 97780Y (25 March 2016); doi: 10.1117/12.2221920
Proc. SPIE 9778, Optical metrology solutions for 10nm films process control challenges, 97780Z (18 March 2016); doi: 10.1117/12.2220462
Proc. SPIE 9778, Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA), 977810 (29 March 2016); doi: 10.1117/12.2220379
Proc. SPIE 9778, Optimizing noise for defect analysis with through-focus scanning optical microscopy, 977811 (8 March 2016); doi: 10.1117/12.2220679
Proc. SPIE 9778, Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry, 977812 (18 March 2016); doi: 10.1117/12.2220184
SEM II
Proc. SPIE 9778, Process monitor of 3D-device features by using FIB and CD-SEM, 977814 (8 March 2016); doi: 10.1117/12.2218997
Proc. SPIE 9778, Free surface BCP self-assembly process characterization with CDSEM, 977815 (24 March 2016); doi: 10.1117/12.2218347
Proc. SPIE 9778, Advanced CD-SEM metrology for qualification of DSA patterns using coordinated line epitaxy (COOL) process, 977816 (4 April 2016); doi: 10.1117/12.2218605
Proc. SPIE 9778, Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection, 977817 (24 March 2016); doi: 10.1117/12.2218944
AFM
Proc. SPIE 9778, Simultaneous AFM nano-patterning and imaging for photomask repair, 977818 (8 March 2016); doi: 10.1117/12.2219041
Proc. SPIE 9778, Device level 3D characterization using PeakForce AFM, 97781A (18 March 2016); doi: 10.1117/12.2220152
Proc. SPIE 9778, Large dynamic range Atomic Force Microscope for overlay improvements, 97781B (8 March 2016); doi: 10.1117/12.2218249
Overlay: Metrology Target Design and Optimization
Proc. SPIE 9778, SEM based overlay measurement between resist and buried patterns, 97781D (27 April 2016); doi: 10.1117/12.2221910
Proc. SPIE 9778, In-depth analysis of sampling optimization methods, 97781E (8 March 2016); doi: 10.1117/12.2219037
Proc. SPIE 9778, Device overlay method for high volume manufacturing, 97781F (18 March 2016); doi: 10.1117/12.2219701
Proc. SPIE 9778, Eliminating the offset between overlay metrology and device patterns using computational metrology target design, 97781G (20 October 2016); doi: 10.1117/12.2219439
Proc. SPIE 9778, A study of swing-curve physics in diffraction-based overlay, 97781I (24 March 2016); doi: 10.1117/12.2222040
Proc. SPIE 9778, Enhacement of intrafield overlay using a design based metrology system, 97781J (24 March 2016); doi: 10.1117/12.2218937
Overlay Optimization: Joint Session with Conferences 9778 and 9780
Proc. SPIE 9778, Assessments of image-based and scatterometry-based overlay targets, 97781K (8 March 2016); doi: 10.1117/12.2220382
Proc. SPIE 9778, Lithography aware overlay metrology target design method, 97781L (24 March 2016); doi: 10.1117/12.2218653
Proc. SPIE 9778, Root cause analysis of overlay metrology excursions with scatterometry overlay technology (SCOL), 97781M (24 March 2016); doi: 10.1117/12.2219668
Mask Inspection
Proc. SPIE 9778, Material analysis techniques used to drive down in-situ mask contamination sources, 97781N (25 March 2016); doi: 10.1117/12.2220400
Proc. SPIE 9778, Scanning scattering contrast microscopy for actinic EUV mask inspection, 97781O (24 March 2016); doi: 10.1117/12.2220027
Design Interaction with Metrology: Joint Session with Conferences 9778 and 9781
Proc. SPIE 9778, Modeling metrology for calibration of OPC models, 97781Q (24 March 2016); doi: 10.1117/12.2218534