Front Matter: Volume 9779
Proc. SPIE 9779, Front Matter: Volume 9779, 977901 (17 May 2016); doi: 10.1117/12.2229276
EUV Materials I: MOx Resists: Joint session with Conferences 9776 and 9779
Proc. SPIE 9779, Metal oxide EUV photoresist performance for N7 relevant patterns and processes, 977904 (25 March 2016); doi: 10.1117/12.2219527
Proc. SPIE 9779, Positive tone oxide nanoparticle EUV (ONE) photoresists, 977905 (21 March 2016); doi: 10.1117/12.2218900
Proc. SPIE 9779, Characterizing and modeling electrical response to light for metal-based EUV photoresists, 977906 (25 March 2016); doi: 10.1117/12.2219736
EUV Materials II: CARs and Novel Approaches: Joint Session with Conferences 9776 and 9779
EUV Materials III: CAR Resists and Fundamentals
Proc. SPIE 9779, Acid generation efficiency: EUV photons versus photoelectrons, 97790A (25 March 2016); doi: 10.1117/12.2218457
Proc. SPIE 9779, Study of energy delivery and mean free path of low energy electrons in EUV resists, 97790B (25 March 2016); doi: 10.1117/12.2220390
Proc. SPIE 9779, Cross sections of EUV PAGs: influence of concentration, electron energy, and structure, 97790C (21 March 2016); doi: 10.1117/12.2219851
Proc. SPIE 9779, Quantification of the resist dissolution process: an in situ analysis using high speed atomic force microscopy, 97790D (31 March 2016); doi: 10.1117/12.2219078
Proc. SPIE 9779, Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography), 97790E (25 March 2016); doi: 10.1117/12.2218839
Proc. SPIE 9779, Studying electron-PAG interactions using electron-induced fluorescence, 97790F (25 March 2016); doi: 10.1117/12.2219850
EUV Materials IV: Metal Oxide Resists
Proc. SPIE 9779, Characterization of 'metal resist' for EUV lithography, 97790G (25 March 2016); doi: 10.1117/12.2219030
Proc. SPIE 9779, Metal containing material processing on coater/developer system, 97790H (25 March 2016); doi: 10.1117/12.2219106
Proc. SPIE 9779, Characterization of HafSOx inorganic photoresists using electron stimulated desorption, 97790I (21 March 2016); doi: 10.1117/12.2220604
Proc. SPIE 9779, Systematic investigation of the synthesis, characterization and switching mechanism of metal oxide nanoparticle resists, 97790J (21 March 2016); doi: 10.1117/12.2219638
Proc. SPIE 9779, Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV, 97790K (25 March 2016); doi: 10.1117/12.2217766
Patterning Materials and Etch: Joint Session with Conferences 9779 and 9782
Proc. SPIE 9779, Contact/Via placement management for N7 logic and beyond, 97790M (25 March 2016); doi: 10.1117/12.2218976
Proc. SPIE 9779, 3D-ICs created using oblique processing, 97790N (21 March 2016); doi: 10.1117/12.2218696
Negative Tone Materials and Processes: Joint Session with Conference 9779 and 9780
Proc. SPIE 9779, Challenges for immersion lithography extension based on negative tone imaging (NTI) process, 97790O (25 March 2016); doi: 10.1117/12.2218939
Proc. SPIE 9779, Novel DDR process and materials for front-edge NTD process, 97790P (21 March 2016); doi: 10.1117/12.2218825
Proc. SPIE 9779, Fundamental characterization of shrink techniques on negative tone development based dense contact holes, 97790Q (25 March 2016); doi: 10.1117/12.2218626
DSA Process and Integration: Joint Session with Conferences 9777 and 9779
Proc. SPIE 9779, Toward sub-20nm pitch Fin patterning and integration with DSA, 97790R (28 March 2016); doi: 10.1117/12.2220120
DSA Materials and Processes: Joint Session with Conferences 9777 and 9779
Proc. SPIE 9779, Directed self-assembly of PS-b-PMMA with ionic liquid addition, 97790S (25 March 2016); doi: 10.1117/12.2220420
Advanced Patterning Process Characterization
Proc. SPIE 9779, An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography, 97790U (25 March 2016); doi: 10.1117/12.2219375
Proc. SPIE 9779, CD bias control on hole pattern, 97790V (25 March 2016); doi: 10.1117/12.2218961
Proc. SPIE 9779, High speed AFM studies of 193 nm immersion photoresists during TMAH development, 97790W (21 March 2016); doi: 10.1117/12.2218956
Proc. SPIE 9779, A physical resist shrinkage model for full-chip lithography simulations, 97790Y (25 March 2016); doi: 10.1117/12.2239243
DSA Novel Materials
Proc. SPIE 9779, High chi block copolymer DSA to improve pattern quality for FinFET device fabrication, 977910 (25 March 2016); doi: 10.1117/12.2219544
Proc. SPIE 9779, High chi block copolymers based on chemical modification of poly(t-butyl acrylate) containing block copolymers, 977911 (11 April 2016); doi: 10.1117/12.2221905
Proc. SPIE 9779, Design of new block copolymer systems to achieve thick films with defect-free structures for applications of DSA into lithographic large nodes, 977913 (25 March 2016); doi: 10.1117/12.2219214
Proc. SPIE 9779, Directed self-assembly materials for high resolution beyond PS-b-PMMA, 977914 (25 March 2016); doi: 10.1117/12.2220424
Proc. SPIE 9779, Formation of microphase-separated structure with half pitch less than 5.0nm formed by multiblock copolymers for nanolithographic application, 977916 (21 March 2016); doi: 10.1117/12.2219125
Process Improvements for Advanced Patterning
Proc. SPIE 9779, Novel pattern trimming and shrink material (PTM (PTD) and PSM (NTI)) for ArF/EUV extension, 977917 (25 March 2016); doi: 10.1117/12.2218826
Proc. SPIE 9779, Evaluation of water based intelligent fluids for resist stripping in single wafer cleaning tools, 977919 (21 March 2016); doi: 10.1117/12.2220156
Proc. SPIE 9779, Novel ArF extension technique by applying Dry Development Rinse Process (DDRP) and Materials (DDRM), 97791A (25 March 2016); doi: 10.1117/12.2219521
Proc. SPIE 9779, Additive chemistry and distributions in NTD photoresist thin films, 97791B (25 March 2016); doi: 10.1117/12.2219743
Proc. SPIE 9779, PVD prepared molecular glass resists for scanning probe lithography, 97791C (21 March 2016); doi: 10.1117/12.2219080
DSA Materials: Fundamentals and Simulation
Proc. SPIE 9779, Directed self-assembly of diblock copolymers in multi-VIA configurations: effect of chemopatterned substrates on defectivity, 97791E (21 March 2016); doi: 10.1117/12.2218644
Proc. SPIE 9779, Surface affinity role in graphoepitaxy of lamellar block copolymers, 97791F (21 March 2016); doi: 10.1117/12.2219131
Proc. SPIE 9779, Influence of template fill in graphoepitaxy DSA, 97791G (25 March 2016); doi: 10.1117/12.2219580
Poster Session: Advanced Patterning Materials
Proc. SPIE 9779, Planarization of topography with spin-on carbon hard mask, 97791I (25 March 2016); doi: 10.1117/12.2218504
Proc. SPIE 9779, Optics-free lithography on colloidal nanocrystal assemblies, 97791J (21 March 2016); doi: 10.1117/12.2218792
Proc. SPIE 9779, Development of heat resistant polyphenol compounds applied to the spin-on carbon hardmask, 97791K (21 March 2016); doi: 10.1117/12.2218946
Proc. SPIE 9779, Enhancing the Novolak resin resist resolution by adding phenol to fractionated resin, 97791L (25 March 2016); doi: 10.1117/12.2218948
Proc. SPIE 9779, Spin-on metal oxide materials with high etch selectivity and wet strippability, 97791O (25 March 2016); doi: 10.1117/12.2220293
Proc. SPIE 9779, New resist materials based on polyacetal main chain scission, 97791P (21 March 2016); doi: 10.1117/12.2230398
Poster Session: Advanced Processing
Proc. SPIE 9779, Metal reduction at point-of-use filtration, 97791R (25 March 2016); doi: 10.1117/12.2218400
Proc. SPIE 9779, Integrating nanosphere lithography in device fabrication, 97791S (21 March 2016); doi: 10.1117/12.2218562
Proc. SPIE 9779, Analyzing block placement errors in SADP patterning, 97791T (21 March 2016); doi: 10.1117/12.2218597
Proc. SPIE 9779, Considerations for fine hole patterning for the 7nm node, 97791V (25 March 2016); doi: 10.1117/12.2218774
Proc. SPIE 9779, Chemical trimming overcoat: an enhancing composition and process for 193nm lithography, 97791Y (25 March 2016); doi: 10.1117/12.2219688
Poster Session: DSA Materials
Proc. SPIE 9779, Novel neutral under layer materials to enhance the photolithography performance and defectivity for chemo-epitaxy process, 97791Z (21 March 2016); doi: 10.1117/12.2219005
Proc. SPIE 9779, Phase field mapping for accurate, ultrafast simulations of directed self-assembly, 977920 (25 March 2016); doi: 10.1117/12.2219311
Proc. SPIE 9779, Filtration on block copolymer solution used in directed self assembly lithography, 977921 (25 March 2016); doi: 10.1117/12.2219423
Proc. SPIE 9779, Contrast enhanced diffusion NMR: quantifying impurities in block copolymers for DSA, 977922 (21 March 2016); doi: 10.1117/12.2218633
Poster Session: E-Beam Materials
Proc. SPIE 9779, mr-PosEBR: a novel positive tone resist for high resolution electron beam lithography and 3D surface patterning, 977925 (21 March 2016); doi: 10.1117/12.2219165