Proceedings Volume 9780 is from: Logo
SPIE ADVANCED LITHOGRAPHY
21-25 February 2016
San Jose, California, United States
Front Matter: Volume 9780
Proc. SPIE 9780, Front Matter: Volume 9780, 978001 (2 August 2016); doi: 10.1117/12.2239746
Keynote Session
Proc. SPIE 9780, Patterning challenges in the sub-10 nm era, 978002 (28 March 2016); doi: 10.1117/12.2222256
Pushing Optical Limit
Proc. SPIE 9780, Expected innovations of optical lithography in the next 10 years, 978004 (15 March 2016); doi: 10.1117/12.2219918
Proc. SPIE 9780, Computational process modeling and correction in a multi-patterning era, 978005 (15 March 2016); doi: 10.1117/12.2225456
Proc. SPIE 9780, Lithographic qualification of high-transmission mask blank for 10nm node and beyond, 978006 (1 April 2016); doi: 10.1117/12.2219778
Proc. SPIE 9780, Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections, 978007 (15 March 2016); doi: 10.1117/12.2220591
Image and Process Control
Proc. SPIE 9780, Lower BW and its impact on the patterning performance, 978008 (16 March 2016); doi: 10.1117/12.2219945
Proc. SPIE 9780, Intra-lot wafer by wafer overlay control using integrated and standalone metrology combined sampling, 978009 (15 March 2016); doi: 10.1117/12.2219922
Proc. SPIE 9780, Reduction of wafer-edge overlay errors using advanced correction models, optimized for minimal metrology requirements, 97800A (15 March 2016); doi: 10.1117/12.2220459
Proc. SPIE 9780, Overcoming low-alignment signal contrast induced alignment failure by alignment signal enhancement, 97800B (15 March 2016); doi: 10.1117/12.2220587
Proc. SPIE 9780, Lithographic imaging-driven pattern edge placement errors at 10nm node, 97800C (15 March 2016); doi: 10.1117/12.2218146
Negative Tone Materials and Processes: Joint Session with Conference 9779 and 9780
Proc. SPIE 9780, Process window variation comparison between NTD and PTD for various contact type, 97800D (16 March 2016); doi: 10.1117/12.2218858
Proc. SPIE 9780, Ultimate 2D resolution printing with negative tone development, 97800E (15 March 2016); doi: 10.1117/12.2219765
Computational Lithography
Proc. SPIE 9780, Machine learning (ML)-guided OPC using basis functions of polar Fourier transform, 97800H (15 March 2016); doi: 10.1117/12.2219073
Proc. SPIE 9780, Bayesian inference for OPC modeling, 97800I (15 March 2016); doi: 10.1117/12.2219707
Proc. SPIE 9780, OPC recipe optimization using genetic algorithm, 97800J (15 March 2016); doi: 10.1117/12.2219166
Proc. SPIE 9780, Impact of bandwidth variation on OPC model accuracy, 97800K (23 March 2016); doi: 10.1117/12.2219892
Material and Process Driven Resolution Enhancements
Proc. SPIE 9780, An integrated source/mask/DSA optimization approach, 97800M (23 March 2016); doi: 10.1117/12.2222170
Proc. SPIE 9780, Multi-layer VEB modeling: capturing interlayer etch process effects for multi-patterning process, 97800N (28 March 2016); doi: 10.1117/12.2219237
Proc. SPIE 9780, Mask defect printability in the Self-Aligned Quadruple Patterning (SAQP) process, 97800O (15 March 2016); doi: 10.1117/12.2218416
Design and Litho Optimization: Joint Session with Conferences 9780 and 9781
Proc. SPIE 9780, Standard cell pin access and physical design in advanced lithography, 97800P (15 March 2016); doi: 10.1117/12.2222289
Proc. SPIE 9780, Incorporating photomask shape uncertainty in computational lithography, 97800Q (15 March 2016); doi: 10.1117/12.2220278
Non-IC Applications
Proc. SPIE 9780, Alternative high-resolution lithographic technologies for optical applications, 97800R (15 March 2016); doi: 10.1117/12.2222028
Proc. SPIE 9780, High dynamic grayscale lithography with an LED-based micro-image stepper, 97800T (15 March 2016); doi: 10.1117/12.2219099
Proc. SPIE 9780, Firefly: an optical lithographic system for the fabrication of holographic security labels, 97800U (15 March 2016); doi: 10.1117/12.2218019
Proc. SPIE 9780, Phase analysis of amplitude binary mask structures, 97800V (15 March 2016); doi: 10.1117/12.2219062
Overlay Optimization: Joint Session with Conferences 9778 and 9780
Proc. SPIE 9780, Patterned wafer geometry (PWG) metrology for improving process-induced overlay and focus problems, 97800W (15 March 2016); doi: 10.1117/12.2218630
Proc. SPIE 9780, Improvement of unbalanced illumination induced telecentricity within the exposure slit, 97800X (15 March 2016); doi: 10.1117/12.2220588
Toolings
Proc. SPIE 9780, High-order aberration control during exposure for leading-edge lithography projection optics, 97800Y (15 March 2016); doi: 10.1117/12.2218840
Proc. SPIE 9780, The ArF laser for the next-generation multiple-patterning immersion lithography supporting green operations, 978010 (15 March 2016); doi: 10.1117/12.2219379
Proc. SPIE 9780, NXT:1980Di immersion scanner for 7nm and 5nm production nodes, 978011 (15 March 2016); doi: 10.1117/12.2220589
Proc. SPIE 9780, Next-generation immersion scanner optimizing on-product performance for 7nm node, 978012 (15 March 2016); doi: 10.1117/12.2218955
Proc. SPIE 9780, Investigation of systematic CD distribution error on intrafield, 978013 (15 March 2016); doi: 10.1117/12.2219562
Interactive Poster Session
Proc. SPIE 9780, Periodic sub-100nm structures fabricated by proximity i-line mask-aligner lithography (and self-aligned double patterning), 978014 (15 March 2016); doi: 10.1117/12.2218610
Proc. SPIE 9780, Innovative method to suppress local geometry distortions for fabrication of interdigitated electrode arrays with nano gaps, 978015 (15 March 2016); doi: 10.1117/12.2218527
Proc. SPIE 9780, Coherence management in lithography printing systems, 978016 (15 March 2016); doi: 10.1117/12.2219115
Proc. SPIE 9780, Fabricate large area and defect free periodic structures with advance achromatic laser interference lithography, 978017 (15 March 2016); doi: 10.1117/12.2218871
Proc. SPIE 9780, Optimizing the lithography model calibration algorithms for NTD process, 978018 (15 March 2016); doi: 10.1117/12.2216049
Proc. SPIE 9780, Source mask optimization using 3D mask and compact resist models, 978019 (15 March 2016); doi: 10.1117/12.2220011
Proc. SPIE 9780, Layer aware source mask target optimization, 97801A (15 March 2016); doi: 10.1117/12.2219864
Proc. SPIE 9780, A novel full chip process window OPC based on matrix retargeting, 97801C (15 March 2016); doi: 10.1117/12.2219913
Proc. SPIE 9780, Simple method for decreasing wafer topography effect for implant mask, 97801E (15 March 2016); doi: 10.1117/12.2219863
Proc. SPIE 9780, Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method, 97801F (15 March 2016); doi: 10.1117/12.2219144
Proc. SPIE 9780, Means to improve light source productivity: from proof of concept to field implementation, 97801G (15 March 2016); doi: 10.1117/12.2219940
Proc. SPIE 9780, Neon reduction program on Cymer ArF light sources, 97801H (15 March 2016); doi: 10.1117/12.2219942
Proc. SPIE 9780, The next-generation ArF excimer laser for multiple-patterning immersion lithography with helium free operation, 97801I (15 March 2016); doi: 10.1117/12.2218778
Proc. SPIE 9780, Rare resource supply crisis and solution technology for semiconductor manufacturing, 97801J (15 March 2016); doi: 10.1117/12.2219454
Proc. SPIE 9780, Progress on glass ceramic ZERODUR enabling nanometer precision, 97801K (15 March 2016); doi: 10.1117/12.2219629
Proc. SPIE 9780, Spatial conversion of excimer laser beam, 97801L (15 March 2016); doi: 10.1117/12.2219934
Proc. SPIE 9780, Optimal design of wide-view-angle waveplate used for polarimetric diagnosis of lithography system, 97801M (15 March 2016); doi: 10.1117/12.2219139
Proc. SPIE 9780, Confocal position alignment in high-precision wavefront error metrology using Shack-Hartmann wavefront sensor, 97801N (15 March 2016); doi: 10.1117/12.2218506
Proc. SPIE 9780, SEM signal emulation for 2D patterns, 97801O (15 March 2016); doi: 10.1117/12.2223033
Proc. SPIE 9780, Source mask optimization study based on latest Nikon immersion scanner, 97801P (15 March 2016); doi: 10.1117/12.2223576
Proc. SPIE 9780, CDU budget breakdown as a diagnostic method for imaging sensitivity in HVM, 97801Q (15 March 2016); doi: 10.1117/12.2214123
Proc. SPIE 9780, Inverse polarizer on immersion lithography mask, 97801R (15 March 2016); doi: 10.1117/12.2225127
Proc. SPIE 9780, Line edge roughness frequency analysis for SAQP process, 97801S (15 March 2016); doi: 10.1117/12.2229176