PROCEEDINGS VOLUME 9818
2016 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE AND TENTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE | 10-13 APRIL 2016
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
IN THIS VOLUME

0 Sessions, 42 Papers, 0 Presentations
2016 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE AND TENTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE
10-13 April 2016
Changzhou, China
Information Data Storage and Optical Storage
Proc. SPIE 9818, Embedded NVM technology at BEOL for 14nm FinFET and beyond, 981801 (12 October 2016); doi: 10.1117/12.2239936
Proc. SPIE 9818, Long-term data preservation on sapphire optical discs, 981802 (12 October 2016); doi: 10.1117/12.2242268
Proc. SPIE 9818, Exploring mechanism on nano-structuring manipulation of crystallization temperature of superlattice-like [GeSb/Ge]3 phase-change films, 981803 (12 October 2016); doi: 10.1117/12.2243447
Proc. SPIE 9818, Research on the photochemical kinetics process of gold nanoparticle-doped photopolymer system using Raman spectroscopy, 981804 (12 October 2016); doi: 10.1117/12.2245065
Proc. SPIE 9818, Development of three-dimensional memory (3D-M), 981805 (12 October 2016); doi: 10.1117/12.2245145
Proc. SPIE 9818, A novel standby mode detection scheme with light load efficiency improvement, 981806 (12 October 2016); doi: 10.1117/12.2239874
Proc. SPIE 9818, An efficiency-enhanced 2X/1.5X SC charge pump with auto-adjustable output regulation for PCM, 981807 (12 October 2016); doi: 10.1117/12.2240919
Proc. SPIE 9818, Comparison of thermal stabilities between Zr9(Ge2Sb2Te5)91 and Ge2Sb2Te5 phase change films, 981808 (12 October 2016); doi: 10.1117/12.2242489
Proc. SPIE 9818, N-doped GeTe phase change material for high-temperature data retention and low-power consumption, 981809 (12 October 2016); doi: 10.1117/12.2243757
Proc. SPIE 9818, Optical inversions based on polarization parameters indirect microscopic imaging, 98180A (12 October 2016); doi: 10.1117/12.2244823
Proc. SPIE 9818, Microstructure evolution of the phase change material TiSbTe, 98180B (12 October 2016); doi: 10.1117/12.2245016
Proc. SPIE 9818, FPGA-based prototype storage system with phase change memory , 98180C (12 October 2016); doi: 10.1117/12.2245020
Proc. SPIE 9818, High speed sense amplifier with efficient pre-charge scheme for PCM in the 28nm process, 98180D (12 October 2016); doi: 10.1117/12.2245021
Proc. SPIE 9818, Soft-start mechanism with coefficients Ki optimization for DC-DC power converters, 98180E (12 October 2016); doi: 10.1117/12.2245025
Proc. SPIE 9818, A power-efficient and non-volatile programmable logic array based on phase change memory, 98180F (12 October 2016); doi: 10.1117/12.2245026
Proc. SPIE 9818, The storage system of PCM based on random access file system, 98180G (12 October 2016); doi: 10.1117/12.2245028
Proc. SPIE 9818, Electrical properties of Cr-doped Sb2Te3 phase change material, 98180H (12 October 2016); doi: 10.1117/12.2245039
Proc. SPIE 9818, Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory, 98180I (12 October 2016); doi: 10.1117/12.2245062
Proc. SPIE 9818, A non-volatile flip-flop based on diode-selected PCM for ultra-low power systems, 98180J (12 October 2016); doi: 10.1117/12.2245110
Proc. SPIE 9818, Simulation of phase-change random access memory with 35nm diameter of the TiN bottom electrode by finite element modeling, 98180K (12 October 2016); doi: 10.1117/12.2245269
Proc. SPIE 9818, Optimization of a PCRAM Chip for high-speed read and highly reliable reset operations, 98180L (12 October 2016); doi: 10.1117/12.2245306
Proc. SPIE 9818, Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma, 98180M (12 October 2016); doi: 10.1117/12.2245726
Proc. SPIE 9818, Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition , 98180N (12 October 2016); doi: 10.1117/12.2246211
Proc. SPIE 9818, Formation of recessed hole by NF3/O2 etching for phase change memory, 98180O (12 October 2016); doi: 10.1117/12.2246305
Proc. SPIE 9818, A cleaning method for reduced graphene oxide by inductively coupled plasma, 98180P (12 October 2016); doi: 10.1117/12.2246592
Proc. SPIE 9818, Comparisons between conventional optical imaging and parametric indirect microscopic imaging on human skin detection, 98180Q (12 October 2016); doi: 10.1117/12.2246710
Proc. SPIE 9818, Optimization of J-V characteristic in diode array for phase change memory, 98180R (12 October 2016); doi: 10.1117/12.2246915
Proc. SPIE 9818, Microstructure and electrical properties of Sb2Te phase-change material, 98180S (12 October 2016); doi: 10.1117/12.2246978
Proc. SPIE 9818, Te-free environmental materials of TixSb2.19Se applied in phase change memory, 98180T (12 October 2016); doi: 10.1117/12.2246980
Proc. SPIE 9818, Investigation of (SiC)0.85-Sb3Te alloy for high-reliability PCM applications, 98180U (12 October 2016); doi: 10.1117/12.2246984
Proc. SPIE 9818, N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application, 98180V (12 October 2016); doi: 10.1117/12.2246985
Proc. SPIE 9818, Investigation of data retention under current bias for phase change memory, 98180W (12 October 2016); doi: 10.1117/12.2246987
Proc. SPIE 9818, Development and application of a new CMP slurry for phase change memory, 98180X (12 October 2016); doi: 10.1117/12.2248154
Proc. SPIE 9818, High resolution patterning on AgInSbTe thin films by laser thermal lithography, 98180Y (12 October 2016); doi: 10.1117/12.2248173
Proc. SPIE 9818, Influence of temperature on the optical system with large diameter off-axis parabolic lenses, 98180Z (12 October 2016); doi: 10.1117/12.2248314
Proc. SPIE 9818, Super resolution nano-information recording in a new hydrazone metal complex material, 981810 (12 October 2016); doi: 10.1117/12.2248354
Proc. SPIE 9818, Thermal lithography characteristics of SbBi thin films, 981811 (12 October 2016); doi: 10.1117/12.2248356
Proc. SPIE 9818, Measurement and observation of transient nonlinear effect of Sb2Te3 phase change thin films, 981812 (12 October 2016); doi: 10.1117/12.2248516
Proc. SPIE 9818, Comprehensive analysis and optimization of interface in device, 981813 (12 October 2016); doi: 10.1117/12.2249001
Proc. SPIE 9818, Temperature field simulation of phase change material/metal bilayer structure upon femtosecond laser pulse irradiation, 981814 (12 October 2016); doi: 10.1117/12.2249262
Proc. SPIE 9818, Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system, 981815 (12 October 2016); doi: 10.1117/12.2249274
Front Matter: Volume 9818
Proc. SPIE 9818, Front Matter: Volume 9818, 981816 (18 November 2016); doi: 10.1117/12.2264274
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