PROCEEDINGS VOLUME 9957
SPIE OPTICAL ENGINEERING + APPLICATIONS | 28 AUGUST - 1 SEPTEMBER 2016
Wide Bandgap Power Devices and Applications
Proceedings Volume 9957 is from: Logo
SPIE OPTICAL ENGINEERING + APPLICATIONS
28 August - 1 September 2016
San Diego, California, United States
Front Matter: Volume 9957
Proc. SPIE 9957, Front Matter: Volume 9957, 995701 (23 December 2016); doi: 10.1117/12.2256398
Wide Band Gap Materials and Devices I
Proc. SPIE 9957, Evaluation of surface recombination of SiC for development of bipolar devices, 995703 (19 September 2016); doi: 10.1117/12.2240471
Proc. SPIE 9957, Influence of hydrogen plasma irradiation on defects of ZnO, 995704 (19 September 2016); doi: 10.1117/12.2237408
Wide Band Gap Material and Devices II
Proc. SPIE 9957, ZnO nanostructures a versatile material platform (Conference Presentation), 995708 (); doi: 10.1117/12.2240575
Proc. SPIE 9957, Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient, 995709 (19 September 2016); doi: 10.1117/12.2239177
WBG Power Applications I
Proc. SPIE 9957, A survey on GaN- based devices for terahertz photonics, 99570A (19 September 2016); doi: 10.1117/12.2240591
Proc. SPIE 9957, Switching performance and efficiency investigation of GaN based DC-DC Buck converter for low voltage and high current applications, 99570C (19 September 2016); doi: 10.1117/12.2238142
WBG Power Applications II
Proc. SPIE 9957, Development of an amorphous selenium based photoconductor and its application in a high-sensitivity photodetector (Conference Presentation), 99570D (); doi: 10.1117/12.2237545
Poster Session
Proc. SPIE 9957, Simulation of push-pull inverter using wide bandgap devices, 99570H (19 September 2016); doi: 10.1117/12.2238362
Proc. SPIE 9957, Silicon carbide DC-DC multilevel Cuk converter, 99570I (19 September 2016); doi: 10.1117/12.2238931
Proc. SPIE 9957, Modeling a multilevel boost converter using SiC components for PV application, 99570J (19 September 2016); doi: 10.1117/12.2238932
Proc. SPIE 9957, Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices, 99570K (19 September 2016); doi: 10.1117/12.2238195
Proc. SPIE 9957, Thermal modeling of wide bandgap materials for power MOSFETs, 99570L (19 September 2016); doi: 10.1117/12.2240675
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