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5 March 2022 Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN
Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010B (2022) https://doi.org/10.1117/12.2626491
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
P-type doping in III-Nitrides has long presented a challenge in the development of wide bandgap optoelectronic devices. To date, magnesium is the only commercially viable acceptor in III-Nitrides. Beryllium has been considered a potential alternative to magnesium, and initial theoretical calculations as well as photoluminescence studies suggested that it is shallower than magnesium in GaN. However, to date, there have been no reliable or repeatable examples of p-type GaN:Be in literature. Here, we present a systematic study of MOCVD-grown GaN:Be with varied doping conditions. All samples show prominent UV and yellow luminescence, characteristic of beryllium acceptor in GaN.
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Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, and Shadi Shahedipour-Sandvik "Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010B (5 March 2022); https://doi.org/10.1117/12.2626491
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KEYWORDS
Gallium nitride
Beryllium
Metalorganic chemical vapor deposition
Optoelectronics
Magnesium
Doping
Luminescence
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