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5 March 2022 MOCVD-grown high-performance gallium-oxide thin films, heterostructures, and devices
Sriram Krishnamoorthy, Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy
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Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020J (2022) https://doi.org/10.1117/12.2626507
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We will report on the following key recent advances in MOVCD growth and device demonstration based on homoepitaxial 010-oriented beta gallium Oxide thin films and heterostructures- (i) expanded MOCVD growth window with high quality films grown at a substrate temperature as low as 600 C, (ii) record ohmic contact specific resistance and regrown ohmic contacts using low temperature epitaxy, (iii) sharp doping profiles leading to demonstration of pure 2DEG using MOCVD-grown aluminum gallium oxide/gallium oxide heterojunctions, (iv) high quality in-situ semiconductor/dielectric interfaces grown using MOCVD, (v) a figure of merit of 355 MW/cm2 with a breakdown voltage of 2.44 kV in a β- Ga2O3 MESFET, and (vi) lateral breakdown voltages as high as 4.5 kV in a gate pad connected field plated MESFET. The low temperature epitaxy and processing approach also enables growth and fabrication of transistors on engineered composite substrates for thermal management.
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Sriram Krishnamoorthy, Arkka Bhattacharyya, Praneeth Ranga, and Saurav Roy "MOCVD-grown high-performance gallium-oxide thin films, heterostructures, and devices", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020J (5 March 2022); https://doi.org/10.1117/12.2626507
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KEYWORDS
Oxides
Gallium
Interfaces
Heterojunctions
Thin film devices
Thin films
Atomic layer deposition
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