High-quality processing of 4H silicon carbide with ultrashort pulse lasers and pulse tailoring techniques

Terence Hollister; James M. Bovatsek

doi:10.1117/12.3003594

13 March 2024 High-quality processing of 4H silicon carbide with ultrashort pulse lasers and pulse tailoring techniques

Terence Hollister, James M. Bovatsek

Proceedings Volume PC12873, Laser-based Micro- and Nanoprocessing XVIII; PC128730L (2024) https://doi.org/10.1117/12.3003594
Event: SPIE LASE, 2024, San Francisco, California, United States

Abstract

The accelerated adoption of e-mobility is causing rapid and large-scale changes in power electronics manufacturing. The circuitry for the advanced electronic drive systems must tolerate high voltages, high currents, and decreasing switching times. All of this requires a migration from silicon-substrate based devices to those built on silicon carbide (SiC) crystal substrates. In this work, we present ablation study results using high power ultrashort pulse (USP) lasers for processing crystalline 4H-type crystalline SiC wafers. Ablation thresholds and material removal efficiencies are characterized, and the advantages of using tailored burst output for machining high-quality features is demonstrated.

Conference Presentation

Citation Download Citation

Terence Hollister and James M. Bovatsek "High-quality processing of 4H silicon carbide with ultrashort pulse lasers and pulse tailoring techniques", Proc. SPIE PC12873, Laser-based Micro- and Nanoprocessing XVIII, PC128730L (13 March 2024); https://doi.org/10.1117/12.3003594

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