An Iron Oxide Mask Blank For Photofabrication Of High Density Low Defect Integrated Circuits

M.Patrick Risen

doi:10.1117/12.954249

1 March 1974 An Iron Oxide Mask Blank For Photofabrication Of High Density Low Defect Integrated Circuits

M.Patrick Risen

Proceedings Volume 0055, Technological Advances in Micro and Submicro Photofabrication Imagery; (1974) https://doi.org/10.1117/12.954249
Event: Acquisition and Analysis of Pictorial Data, 1974, San Diego, United States

Abstract

The use of hard surface film masks in integrated circuit photo-fabrication has increased dramatically in the past few years. The proven manufacturing economies and inherent resolution capability of hard surface masks are the major forces behind this increase.

Citation Download Citation

M.Patrick Risen "An Iron Oxide Mask Blank For Photofabrication Of High Density Low Defect Integrated Circuits", Proc. SPIE 0055, Technological Advances in Micro and Submicro Photofabrication Imagery, (1 March 1974); https://doi.org/10.1117/12.954249

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